Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS5350D,115

Part No.:
PBSS5350D,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
SC-74, SOT-457
Datasheet:
AetrixPBSS5350D,115.pdf
Description:
TRANS PNP 50V 3A 6-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,800

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS5350D,115 from Nexperia is a PNP low VCEsat transistor in SOT457 (SC-74/TSOP6) package, rated for −50 V VCEO, −3 A continuous IC, and 120–150 mΩ RCEsat; designed for high-efficiency supply-line switching and battery management where minimal conduction loss and compact PCB footprint are critical.

For engineers reviewing the PBSS5350D,115 datasheet, PBSS5350D,115 pinout, PBSS5350D,115 application, or PBSS5350D,115 equivalent, key selection criteria include verified PNP low-saturation performance at −2 A/−200 mA drive, thermal resistance under defined PCB mounting conditions, and compatibility with DC-DC converter topologies requiring robust current sinking capability.

Technical Context

This device operates as a discrete PNP bipolar junction transistor optimized for saturated switching-its low VCEsat (≤300 mV at −2 A/−200 mA) and low RCEsat (120–150 mΩ) reduce power dissipation and enable higher efficiency than standard transistors in load-switching roles.

It features a 6-pin SOT457 package with four collector terminals (pins 1,2,5,6), one base (pin 3), and one emitter (pin 4), enabling high-current handling and improved thermal spreading via multiple collector pads connected to PCB copper area.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO−50 V - Maximum safe collector-emitter voltage with base open; defines maximum supply rail tolerance in high-side switch applications.
IC (continuous)−3 A - Continuous collector current rating; supports sustained load switching up to 3 A without derating under specified thermal conditions.
RCEsat120–150 mΩ - Measured collector-emitter saturation resistance at −2 A/−200 mA; directly determines conduction loss (P = I²R) in on-state operation.
VCEsat≤300 mV - Maximum collector-emitter saturation voltage at −2 A/−200 mA; enables <0.6 W conduction loss at full rated current.
hFE≥100 - Minimum DC current gain at −2 A/−200 mA; ensures reliable saturation with modest base drive current in digital control interfaces.
Tj max150 °C - Maximum junction temperature; sets thermal design margin for PCB layout and heatsinking requirements.

Pinout & Package

Package: SOT457 (SC-74 / TSOP6), 6-lead surface-mount plastic package with exposed collector pads for enhanced thermal performance; dimensions per Figure 8 (1.9 mm × 2.7 mm × 0.95 mm).

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6Collector (C)Four parallel collector terminals electrically connected internally; provide low-inductance, high-current paths and improved thermal coupling to PCB copper area.
3Base (B)Control terminal accepting −200 mA peak base current; requires compatible logic-level or driver-stage sourcing for full saturation.
4Emiter (E)Emitter output node; connects to system ground or return path in high-side switch configurations.

Key Features

Feature Design Value
Low VCEsat≤300 mV at −2 A/−200 mA - Reduces on-state power loss by >50% vs. conventional PNP transistors, lowering thermal stress in space-constrained designs.
High current capability−3 A continuous IC - Supports direct control of moderate-power loads (e.g., LED banks, motor drivers, PMIC enable rails) without external current amplification.
Multi-collector package4 collector pins in SOT457 - Enables lower effective thermal resistance (Rth(j-a) = 100 K/W on 4-layer PCB) and higher reliability under pulsed load conditions.
Small PCB footprint2.7 mm × 1.9 mm outline - Saves >40% board area versus TO-236AB (SOT23) equivalents while maintaining higher current rating.

Applications

Supply Line Switching Battery Management

Use Scenario: High-side power switch for USB-C PD port power delivery or system rail enable control.

IC Role / Device Role / Timing Role: PNP transistor configured as active-low controlled high-side switch, turning on/off 5–20 V supply rails.

Use Value: Low 120–150 mΩ RCEsat limits voltage drop to <0.45 V at 3 A, preserving regulation margin and minimizing self-heating during sustained operation.

Use Scenario: Cell-balancing or protection FET in 2–4 cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Discrete PNP switch controlling charge/discharge path or isolation between battery sections.

Use Value: −50 V VCEO rating safely accommodates stacked-cell voltages up to 16.8 V with margin; −6 V VEBO prevents unintended turn-on from leakage currents.

DC-to-DC Conversion Industrial Load Control

Use Scenario: Synchronous rectifier or auxiliary switch in buck/boost converter secondary side.

IC Role / Device Role / Timing Role: Low-loss PNP switch replacing Schottky diode in non-synchronous topologies or assisting gate drive in hybrid configurations.

Use Value: ≤300 mV VCEsat yields lower forward drop than typical 0.4–0.55 V Schottky diodes at 2 A, improving conversion efficiency by 0.8–1.2% at light-to-moderate loads.

Use Scenario: Solid-state relay replacement for PLC output modules or HVAC actuator control.

IC Role / Device Role / Timing Role: Discrete high-current switch driving solenoids, relays, or indicator LEDs in industrial control panels.

Use Value: −5 A ICM peak rating handles inrush currents of inductive loads; 150 °C Tj max supports operation in unventilated enclosures up to 85 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS5350FSame SOT457 package, −50 V VCEO, but higher RCEsat (180–220 mΩ); hFE min = 80 at −2 A.Higher conduction loss at full load; suitable only where thermal headroom exceeds 15 °C or current is limited to ≤1.5 A.Select when cost sensitivity outweighs efficiency targets and thermal constraints allow higher ΔT.
Diodes Inc. DXT53500SOT457 package, −50 V VCEO, −3 A IC, but VCEsat = 350 mV (typ) at −2 A; no multi-collector pinout.Larger voltage drop reduces efficiency in high-duty-cycle switching; single collector limits thermal spreading capability.Prefer only if existing PCB layout uses identical footprint and thermal design already accommodates +0.05 V drop.

Compared with NSS5350F and DXT53500, PBSS5350D,115 delivers the lowest verified RCEsat (120–150 mΩ) and highest thermal performance due to its quad-collector structure-making it optimal for thermally constrained, high-efficiency PNP switching where <300 mV saturation voltage is mandatory.

Availability

PBSS5350D,115 is available at Aetrix Electronics and suitable for supply line switching, battery management, and DC-to-DC conversion applications requiring stable component supply, consistent parametric performance across production lots, and long-term availability for industrial embedded systems.

Supply support for PBSS5350D,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

PBSS5350D,115 belongs to Nexperia's "Low VCEsat Transistor" product line, engineered specifically for high-efficiency power switching in space- and thermal-constrained applications where minimizing conduction loss is critical.

FAQ

What is the maximum continuous collector current for PBSS5350D,115?

The PBSS5350D,115 is rated for −3 A continuous collector current (IC) at Tamb ≤ 25 °C with appropriate PCB copper area (6 cm² for collector pad). Derating applies above 25 °C ambient, reaching zero current at 150 °C junction temperature per the absolute maximum ratings table.

Does PBSS5350D,115 have automotive qualification?

No. Per the 2023 revision history, PBSS5350D,115 is explicitly designated as non-automotive qualified. It is not tested or certified to AEC-Q101 standards. For automotive use, Nexperia offers the −Q qualified variant PBSS5350D,115-Q, which undergoes additional stress testing and lot traceability.

How many collector terminals does PBSS5350D,115 have, and why?

PBSS5350D,115 has four collector terminals (pins 1, 2, 5, and 6) in its SOT457 package. This multi-terminal configuration lowers effective bond wire inductance and improves thermal conduction from the die to the PCB, reducing Rth(j-a) to 100 K/W on a 4-layer board and supporting higher pulsed current capability.

Can PBSS5350D,115 replace an NPN transistor in a circuit?

No-it is a PNP transistor and cannot functionally substitute for an NPN without inverting the control logic and reconfiguring biasing. Its complementary NPN part is PBSS4350D (same package, voltage/current ratings, and low VCEsat architecture), intended for symmetric design pairing in push-pull or H-bridge topologies.

PBSS5350D,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 200mA, 2A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 2A, 2V
Power - Max:
750 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

PBSS5350D,115 FAQ

1.How can I place an order for PBSS5350D,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5350D,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5350D,115 reliable?

The price and inventory of PBSS5350D,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5350D,115 is usually 5 days.

3.What payment methods are accepted for PBSS5350D,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5350D,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5350D,115?

PBSS5350D,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5350D,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5350D,115?

For technical support, including PBSS5350D,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5350D,115 requirements.

6.How does Aetrix verify that PBSS5350D,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5350D,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5350D,115 meets industry standards.

7.What is the process for return or replacement of PBSS5350D,115?

All PBSS5350D,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5350D,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5350D,115 part is unused and in its original packaging.

Return procedure for PBSS5350D,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS5350D,115 Tags

  • PBSS5350D,115
  • PBSS5350D,115 PDF
  • PBSS5350D,115 Datasheet
  • PBSS5350D,115 Specifications
  • PBSS5350D,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS5350D,115
  • Buy PBSS5350D,115
  • PBSS5350D,115 Price
  • PBSS5350D,115 Distributor
  • PBSS5350D,115 Supplier
  • PBSS5350D,115 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER