Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5350D,135

Name: PBSS5350D,135
Brand: Nexperia USA Inc.
SKU: PBSS5350D,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: PBSS5350D,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: SC-74, SOT-457

Datasheet:: PBSS5350D,135.pdf

Description:: TRANS PNP 50V 3A 6-TSOP

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,719

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

PBSS5350D,135 from Nexperia is a PNP low V_CEsat transistor in SOT457 (SC-74/TSOP6) package, rated for −50 V V_CEO, −3 A continuous I_C, and 120–150 mΩ R_CEsat; designed for high-efficiency supply-line switching and battery management where minimal conduction loss and compact PCB footprint are critical.

For engineers reviewing the PBSS5350D,135 datasheet, PBSS5350D,135 pinout, PBSS5350D,135 application, or PBSS5350D,135 equivalent, key selection criteria include verified PNP polarity, confirmed 6-pin SOT457 terminal mapping, low-saturation performance under −2 A/−200 mA drive, thermal resistance under defined PCB copper area, and non-automotive qualification status.

Technical Context

This device operates as a discrete PNP bipolar junction transistor with fixed emitter-base-collector topology. Its low V_CEsat (≤300 mV at −2 A/−200 mA) and R_CEsat (120–150 mΩ) stem from optimized epitaxial structure and heavy doping, enabling reduced power dissipation versus standard transistors.

It delivers h_FE ≥100 at −2 A and exhibits f_T = 100 MHz, supporting moderate-speed switching up to ~100 kHz in DC-DC converters. Thermal performance is specified for three mounting conditions: 1 cm² (208 K/W), 6 cm² (160 K/W), and 4-layer PCB (100 K/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V: Maximum safe collector-emitter voltage with base open; defines blocking capability in high-side switch configurations.
I_C (continuous)	−3 A: Continuous collector current rating; sets maximum steady-state load current in battery disconnect or power rail control.
R_CEsat	120–150 mΩ: Confirmed saturation resistance at −2 A/−200 mA; directly determines conduction loss (P = I²R) and thermal rise.
h_FE	≥100 at −2 A: Minimum DC current gain ensures reliable saturation with ≤200 mA base drive, reducing driver-stage complexity.
f_T	100 MHz: Transition frequency enables stable operation in PWM-controlled DC-DC stages up to ~100 kHz without gain roll-off issues.
T_j max	150 °C: Maximum junction temperature; constrains thermal design margin when operating at full current on FR4 PCBs.

Pinout & Package

Package: SOT457 (SC-74 / TSOP6), 6-lead surface-mount plastic package with exposed collector pad for thermal enhancement; dimensions 3.1 × 1.7 × 1.3 mm (L × W × H); pin 1 index marked.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 5, 6	Collector (C)	Four parallel collector terminals reduce bond-wire inductance and improve current sharing; enable high-current routing via multiple PCB pads.
3	Base (B)	Sole base connection; requires external current-limiting resistor to deliver −200 mA drive for full saturation.
4	Emiter (E)	Single emitter terminal; serves as reference node for load-side switching; must be routed with low-inductance trace in high-dI/dt applications.

Key Features

Feature	Design Value
Low V_CEsat	≤300 mV at −2 A/−200 mA: Reduces conduction loss by >50% vs. conventional PNP transistors, lowering thermal load in space-constrained designs.
High current capability	−3 A continuous, −5 A pulsed: Supports robust load switching in portable power systems without derating below ambient 70 °C.
Thermal efficiency	R_th(j-a) = 100 K/W on 4-layer PCB: Enables higher sustained power density than TO-236 devices in multi-layer board layouts.
PCB area reduction	6-pin SOT457 footprint occupies <25% area of comparable SOT23-3 PNP transistors: Frees routing space for dense battery management ICs.

Applications

Supply Line Switching

Battery Management

Use Scenario: High-side power switch controlling 12 V automotive accessory rail or industrial 24 V bus.

IC Role / Device Role / Timing Role: Discrete PNP transistor acting as main load disconnect switch, driven by microcontroller GPIO via base resistor.

Use Value: Low R_CEsat minimizes voltage drop (<300 mV) and self-heating during continuous 2 A load, eliminating need for heatsink.

Use Scenario: Cell balancing or protection FET in 2S–4S Li-ion battery packs.

IC Role / Device Role / Timing Role: PNP switch isolating charge path or enabling discharge shunt during overvoltage events.

Use Value: −50 V V_CEO safely blocks stacked cell voltages; fast turn-on (driven by dedicated gate driver) supports sub-10 µs response.

DC-to-DC Conversion

Industrial Power Sequencing

Use Scenario: Synchronous rectifier or high-side switch in non-isolated buck converter (e.g., 5 V → 3.3 V @ 2 A).

IC Role / Device Role / Timing Role: Active switch in power stage, controlled by PWM signal through level-shifting base driver.

Use Value: 100 MHz f_T ensures stable gain at 100 kHz switching frequency; low V_CEsat improves conversion efficiency by ≥1.2% at full load.

Use Scenario: Controlled power-up sequencing of FPGA, DSP, or multi-rail SoC in programmable logic controllers.

IC Role / Device Role / Timing Role: Discrete PNP used in discrete delay/enable circuit to stagger 3.3 V, 1.8 V, and 1.2 V rail activation.

Use Value: Predictable h_FE ≥100 allows precise timing via RC network; SOT457 package enables placement near target ICs without routing congestion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS5350MUTBG	Same SOT457 package, −50 V V_CEO, but higher R_CEsat (180–220 mΩ) and lower h_FE (85 min at −2 A).	Less efficient at high current; requires larger base drive for equivalent saturation.	Select if cost sensitivity outweighs 15–20% higher conduction loss and thermal margin is ample.
Diodes Incorporated DMMT5350WQ-7	−40 V V_CEO, −2.5 A I_C, R_CEsat = 130–160 mΩ; automotive-qualified (AEC-Q101).	Not suitable for 48 V or 24 V systems requiring −50 V rating; qualified for automotive environments.	Choose only for automotive-grade designs where −40 V rating suffices and qualification compliance is mandatory.

Compared with NSS5350MUTBG and DMMT5350WQ-7, PBSS5350D,135 offers superior voltage headroom (−50 V), highest continuous current (−3 A), and lowest R_CEsat, making it optimal for industrial and consumer power-switching where thermal density and efficiency are prioritized over automotive qualification.

Availability

PBSS5350D,135 is available at Aetrix Electronics and suitable for supply line switching, battery management, and DC-to-DC conversion applications requiring stable component supply, consistent parametric performance across production lots, and long-term commercial lifecycle support.

Supply support for PBSS5350D,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade components.

PBSS5350D,135 belongs to Nexperia's "Low V_CEsat Transistor" product line, engineered specifically for power efficiency in space-constrained consumer, industrial, and computing applications-emphasizing low conduction loss, thermal robustness, and SMT manufacturability.

FAQ

Is PBSS5350D,135 automotive-qualified?

No. Per Nexperia's revision history (v.7, Jan 2023), PBSS5350D,135 is explicitly designated as non-automotive qualified. It lacks AEC-Q101 certification and is not tested to automotive reliability standards. For automotive use, Nexperia recommends its −Q qualified variants such as PBSS5350DQ,115.

What is the recommended base resistor value for full saturation at −2 A collector current?

With h_FE ≥100 and required I_B = −200 mA for guaranteed saturation, and assuming V_BEsat ≈ −1.2 V at that condition, a 10 Ω resistor is typical when driven from a 3.3 V logic source (I_B = (3.3 V − 1.2 V)/10 Ω = 210 mA). Layout must minimize trace inductance to avoid overshoot.

Can PBSS5350D,135 replace a standard SOT23-3 PNP transistor like BC807?

No direct replacement: PBSS5350D,135 uses a 6-pin SOT457 package with four collector pins and different pinout (C-C-B-E-C-C), whereas BC807 uses 3-pin SOT23-3 (C-B-E). PCB layout, thermal pad, and driver interface must be redesigned; electrical benefits (lower V_CEsat, higher I_C) require revalidation.

How does thermal resistance vary with PCB copper area, and which value applies to standard FR4 prototypes?

R_th(j-a) is 208 K/W on 1 cm² single-sided FR4 (standard prototype), 160 K/W on 6 cm², and 100 K/W on 4-layer board. For lab validation, use the 208 K/W value with conservative derating: at −2 A, P_diss ≈ 0.3 W implies ΔT ≈ 62 °C above ambient-keeping T_j < 125 °C at 25 °C ambient.

PBSS5350D,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 2A, 2V

Power - Max:: 750 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

PBSS5350D,135 FAQ

1.How can I place an order for PBSS5350D,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5350D,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5350D,135 reliable?

The price and inventory of PBSS5350D,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5350D,135 is usually 5 days.

3.What payment methods are accepted for PBSS5350D,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5350D,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5350D,135?

PBSS5350D,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5350D,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5350D,135?

For technical support, including PBSS5350D,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5350D,135 requirements.

6.How does Aetrix verify that PBSS5350D,135 is sourced from the original manufacturer or authorized distributors?

All PBSS5350D,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5350D,135 meets industry standards.

7.What is the process for return or replacement of PBSS5350D,135?

All PBSS5350D,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5350D,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5350D,135 part is unused and in its original packaging.

Return procedure for PBSS5350D,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…