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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5350T,215

Name: PBSS5350T,215
Brand: Nexperia USA Inc.
SKU: PBSS5350T,215
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5350T,215

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5350T,215.pdf

Description:: TRANS PNP 50V 2A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5350T,215 from Nexperia is a PNP low V_CEsat transistor in SOT23 package, rated for −50 V V_CEO, −3 A I_CRM, and 90 mΩ R_CEsat at −2 A/−200 mA drive, used as a high-efficiency switching element in DC/DC converter output stages and LDO pass devices.

For engineers reviewing the PBSS5350T,215 datasheet, PBSS5350T,215 pinout, PBSS5350T,215 application, or PBSS5350T,215 equivalent, key selection criteria include verified V_CEsat ≤ 390 mV at −3 A/−300 mA, thermal resistance R_th(j-a) down to 104 K/W under pulsed conditions, and SOT23-compatible footprint with base-emitter-collector pinning.

Technical Context

This PNP bipolar transistor operates in saturation mode for low-loss power switching, with guaranteed V_CEsat of ≤390 mV at −3 A collector current and −300 mA base drive under pulsed conditions (t_p ≤ 300 µs, δ ≤ 0.02). Its h_FE ≥ 80 at −3 A enables efficient base drive design without excessive current overhead.

The device features V_(BR)CEO = −50 V and V_(BR)CBO = −50 V, supporting robust operation in 24 V and 48 V supply rails. Thermal performance is characterized across multiple PCB mounting configurations, with R_th(j-sp) = 75 K/W confirming strong solder-point heat extraction capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum allowable collector-emitter voltage with base open; defines safe operating range in 24–48 V systems
I_CRM	−3 A - Repetitive peak collector current under pulsed conditions (t_p ≤ 100 ms, δ ≤ 0.25); supports transient load handling
R_CEsat	90–135 mΩ - Equivalent on-resistance at −2 A/−200 mA; directly determines conduction loss and thermal rise
V_CEsat	≤390 mV - Measured at −3 A/−300 mA pulse; enables <100 mW conduction loss per switch event
h_FE	≥80 - DC current gain at −3 A/−2 V; ensures reliable saturation with moderate base drive current
f_T	100 MHz - Transition frequency at −5 V/−100 mA; sufficient for switching up to ~10 MHz in optimized layouts
C_c	35 pF - Collector capacitance at −10 V; impacts turn-off speed and EMI in hard-switched topologies

Pinout & Package

Package: SOT23 (TO-236AB), surface-mounted plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, standard FR4-compatible footprint.

Pin/Terminal	Circuit Role	Design Meaning
1 - B	Base	Control terminal accepting negative current to forward-bias base-emitter junction; requires −300 mA for full saturation at −3 A
2 - E	Emitter	Current source terminal; connected to higher potential rail in PNP high-side switch configuration
3 - C	Collector	Current sink terminal; routed to load or ground return path; thermally coupled to PCB copper via exposed pad in enhanced variants (not applicable here)

Key Features

Feature	Design Value
Low V_CEsat	≤390 mV at −3 A/−300 mA enables <120 mW conduction loss, reducing heatsink requirements in space-constrained LDOs
High current capability	−3 A repetitive peak rating supports 2 A continuous operation with proper PCB thermal management
High h_FE	≥80 at −3 A reduces required base drive current by >2× versus standard PNP transistors, easing driver IC selection
Low R_CEsat	90 mΩ typical at −2 A/−200 mA delivers predictable on-state resistance for accurate loss modeling in DC/DC efficiency calculations
Thermal robustness	R_th(j-a) = 104 K/W under pulsed conditions allows short-duration 3 A loads without exceeding 150 °C junction limit

Applications

Power Management Switching

DC/DC Converter Output Stage

Use Scenario: High-side load switch controlling 12–24 V power domains in industrial PLC modules.

IC Role / Device Role / Timing Role: PNP transistor configured as saturated switch, driven by microcontroller GPIO with level-shifting circuitry.

Use Value: 390 mV V_CEsat limits voltage drop to <0.4 V at 3 A, preserving >96% rail utilization and minimizing self-heating.

Use Scenario: Synchronous rectifier replacement in non-isolated buck converters delivering 1–2 A at 3.3–5 V.

IC Role / Device Role / Timing Role: Low-V_CEsat PNP used in active clamp or auxiliary synchronous path where gate drive complexity must be minimized.

Use Value: 90 mΩ R_CEsat yields lower conduction loss than MOSFETs with comparable R_DS(on) when gate drive voltage is limited to 3.3 V.

Battery Charger Control

LDO Pass Element

Use Scenario: Input reverse-polarity protection and charge-path enable in USB-C PD battery chargers.

IC Role / Device Role / Timing Role: PNP transistor placed between adapter input and charging IC, switched on/off to isolate fault conditions.

Use Value: −50 V V_CEO withstands 36 V surge transients common in automotive-grade adapters; 3 A rating covers 2.4 A fast-charge profiles.

Use Scenario: Pass element in low-dropout linear regulator supplying noise-sensitive analog sensors from 5 V rail.

IC Role / Device Role / Timing Role: PNP emitter-follower topology providing regulated 3.3 V output with <400 mV dropout at full load.

Use Value: Guaranteed ≤390 mV V_CEsat at −3 A ensures stable regulation even during 2.5 A sensor burst currents without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS40501MR6T1G	V_CEO = −40 V, V_CEsat = 450 mV @ −2 A/−200 mA, SOT23 package	Lower breakdown margin; higher V_CEsat increases conduction loss by ~15% at 2 A	Select when cost sensitivity outweighs 10 V headroom and 60 mV V_CEsat penalty
Diotec BC807-40,215	V_CEO = −45 V, V_CEsat = 700 mV @ −500 mA/−50 mA, h_FE = 250–600	Higher V_CEsat and lower current rating limit use to ≤0.5 A loads; wider h_FE spread complicates drive design	Prefer only for low-current biasing or signal-level switching where gain linearity matters more than power efficiency

Compared with NSS40501MR6T1G and BC807-40,215, PBSS5350T,215 delivers superior combination of −50 V rating, sub-400 mV V_CEsat at 3 A, and tight R_CEsat tolerance-making it optimal for high-current, high-reliability power switching where thermal margin and voltage headroom are critical.

Availability

PBSS5350T,215 is available at Aetrix Electronics and suitable for power management switching, DC/DC converter output stages, battery charger control, and LDO pass element applications requiring stable component supply and consistent SOT23 assembly compatibility.

Supply support for PBSS5350T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PBSS5350T,215 belongs to Nexperia's low V_CEsat transistor product line, engineered specifically for high-efficiency power switching in space-constrained consumer, industrial, and computing power supplies.

FAQ

What is the maximum continuous collector current for PBSS5350T,215 under standard PCB conditions?

The PBSS5350T,215 supports −2 A continuous collector current when mounted on an FR4 PCB with single-sided copper and standard footprint (P_tot = 300 mW, T_amb ≤ 25 °C). At elevated ambient temperatures or reduced copper area, derating is required per the thermal resistance curves in section 9 of the datasheet.

Can PBSS5350T,215 replace an NPN transistor in the same circuit?

No-PBSS5350T,215 is a PNP transistor with inverted polarity: emitter connects to higher potential, collector to lower. Direct substitution for an NPN requires circuit reconfiguration including reversed supply connections, inverted drive signals, and updated biasing networks.

Is PBSS5350T,215 qualified for automotive applications?

No-per revision history in section 13, PBSS5350T v.4 explicitly states the device was changed to non-automotive qualification in January 2023. Automotive alternatives must be selected from Nexperia's AEC-Q101-qualified portfolio, such as PBSS5350T-Q.

What is the recommended base resistor value for switching PBSS5350T,215 at 3 A with a 3.3 V MCU GPIO?

With h_FE ≥ 80 and required I_B = −300 mA for full saturation, a 3.3 V GPIO cannot directly drive the base. A Darlington pair or dedicated PNP driver stage is required; standalone resistor drive is not feasible due to excessive base current demand beyond GPIO capability.

PBSS5350T,215 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 390mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: 540 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5350T,215 FAQ

1.How can I place an order for PBSS5350T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5350T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5350T,215 reliable?

The price and inventory of PBSS5350T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5350T,215 is usually 5 days.

3.What payment methods are accepted for PBSS5350T,215?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5350T,215 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5350T,215?

PBSS5350T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5350T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5350T,215?

For technical support, including PBSS5350T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5350T,215 requirements.

6.How does Aetrix verify that PBSS5350T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS5350T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5350T,215 meets industry standards.

7.What is the process for return or replacement of PBSS5350T,215?

All PBSS5350T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5350T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5350T,215 part is unused and in its original packaging.

Return procedure for PBSS5350T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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