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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5350T-QR

Name: PBSS5350T-QR
Brand: Nexperia USA Inc.
SKU: PBSS5350T-QR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5350T-QR

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5350T-QR.pdf

Description:: TRANS PNP 50V 2A TO-236AB

Quantity:: RFQ Add To RFQ list

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Inventory:9,005

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Product details

Overview

PBSS5350T-QR from Nexperia is a PNP low V_CE(sat) transistor in SOT23 package, rated for −50 V V_CEO, −2 A continuous collector current, and 90 mΩ typical R_CE(sat) at −2 A/−200 mA drive. It serves as a high-efficiency power switch in automotive-grade DC/DC converters and LDO regulators where low conduction loss and thermal performance are critical.

For engineers reviewing the PBSS5350T-QR datasheet, PBSS5350T-QR pinout, PBSS5350T-QR application, or PBSS5350T-QR equivalent, this page delivers verified electrical parameters, validated automotive qualification (AEC-Q101), thermal resistance data under defined PCB mounting conditions, and real-world switching use cases - all aligned to Nexperia's official 2022 product data sheet.

Technical Context

This PNP bipolar junction transistor operates with a minimum DC current gain (h_FE) of 200 at −100 mA and maintains ≥80 at −3 A, enabling robust base-driven switching across load ranges. Its low V_CE(sat) (≤390 mV at −3 A/−300 mA) and corresponding R_CE(sat) (90–135 mΩ) reduce conduction losses and heat generation in high-duty-cycle applications.

The device features −50 V V_CEO and V_CBO, −5 V V_EBO, and is qualified per AEC-Q101 for automotive ambient temperatures (−65 °C to +150 °C). Thermal resistance to ambient varies from 104 K/W (pulsed) to 417 K/W (standard FR4), directly tied to PCB copper area and layer count.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V: Maximum safe collector-emitter voltage with open base; defines upper rail limit in high-side PNP switch configurations.
I_C (continuous)	−2 A: Continuous DC collector current rating; sets maximum steady-state load capability without derating.
R_CE(sat)	90–135 mΩ: Equivalent on-resistance at −2 A/−200 mA; determines I²R conduction loss and thermal rise in linear or saturated operation.
V_CE(sat)	≤390 mV at −3 A/−300 mA: Saturation voltage under peak pulsed current; critical for minimizing dropout in LDO and battery charger topologies.
h_FE	≥80 at −3 A: Minimum DC current gain at full rated current; ensures sufficient base drive margin for reliable saturation under worst-case β degradation.
T_j(max)	+150 °C: Maximum junction temperature; enables operation in under-hood automotive environments with appropriate thermal design.
AEC-Q101	Qualified: Meets stress test requirements for discrete semiconductors in automotive applications; supports PPAP documentation.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, standard footprint compatible with reflow and wave soldering per Figures 11–12 in the datasheet.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control terminal; requires −300 mA peak base current to fully saturate at −3 A collector current.
2	Emitter (E)	Current source terminal; connected to higher potential rail in high-side PNP switch configuration.
3	Collector (C)	Load connection terminal; ties to output node (e.g., LDO pass element output or DC/DC converter phase node).

Key Features

Feature	Design Value
Low V_CE(sat)	≤390 mV at −3 A ensures <1.2 W conduction loss, reducing heatsink requirements in space-constrained automotive modules.
High current gain stability	h_FE ≥80 at −3 A enables single-stage base drive without Darlington configuration, simplifying control circuitry.
AEC-Q101 qualification	Validated for automotive temperature cycling, humidity, and mechanical stress - supports Tier-1 BOM inclusion without additional qualification.
Thermal performance scalability	R_th(j-a) drops from 417 K/W (standard FR4) to 104 K/W (pulsed), allowing flexible thermal design based on PCB copper allocation.
Low leakage	I_CBO ≤50 µA at 150 °C ensures minimal standby current in always-on vehicle systems like body control modules.

Applications

Automotive Body Control Module (BCM)

USB-C Power Delivery (PD) Load Switch

Use Scenario: High-side power switching for interior lighting and door lock actuators in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: PNP transistor used as a controlled high-side switch, replacing mechanical relays to reduce size and improve reliability.

Use Value: Low 90 mΩ R_CE(sat) limits voltage drop to <180 mV at 2 A, preserving headroom for LED drivers and solenoid coils while meeting AEC-Q101 lifetime targets.

Use Scenario: Input power path control in portable USB-C PD adapters supporting 20 V/3 A output.

IC Role / Device Role / Timing Role: Discrete PNP switch managing 5–20 V input rail selection and reverse-current blocking before buck controller stage.

Use Value: −50 V V_CEO accommodates transient surges up to ±25 V; fast turn-on/off enabled by high h_FE minimizes cross-conduction risk during dynamic load transitions.

Industrial 24 V DC/DC Converter

Medical Portable Device LDO Pass Element

Use Scenario: Synchronous rectification assist and auxiliary bias rail switching in isolated flyback converters for factory automation sensors.

IC Role / Device Role / Timing Role: Complementary PNP switch paired with NPN PBSS4350T-Q for dual-rail sequencing and fault isolation.

Use Value: Matched R_CE(sat) and V_CE(sat) with NPN complement enables balanced current sharing and thermal tracking across dual outputs.

Use Scenario: Pass transistor in ultra-low-noise 3.3 V LDO for patient monitoring front-end analog signal chains.

IC Role / Device Role / Timing Role: Linear regulator pass element operating in active region to maintain <100 µV RMS output ripple.

Use Value: Low V_BE(on) (≤1.2 V) and stable h_FE allow precise current mirror-based error amplification, achieving <0.5 % load regulation over 0–2 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CE(sat) transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS5350MUTBG	−50 V V_CEO, −2 A I_C, but R_CE(sat) = 150 mΩ (typ) at −2 A - 67 % higher than PBSS5350T-QR.	Higher conduction loss increases thermal stress in compact 24 V industrial converters requiring >1.5 W continuous dissipation.	Select when cost sensitivity outweighs thermal margin; verify junction temperature rise exceeds 125 °C at full load.
Diodes Incorporated DMMT5350WQ-7	−50 V V_CEO, −2 A I_C, R_CE(sat) = 110 mΩ (typ); AEC-Q101 qualified but only up to +125 °C T_j(max).	Lower max junction temperature restricts use in under-hood automotive locations exceeding 125 °C ambient with self-heating.	Prefer for cabin-mounted modules (e.g., infotainment power rails) where ambient stays ≤85 °C and thermal headroom is adequate.

Compared with NSS5350MUTBG and DMMT5350WQ-7, PBSS5350T-QR delivers the lowest R_CE(sat) and highest T_j(max), making it optimal for thermally constrained automotive and industrial high-current switching where efficiency and reliability are co-prioritized.

Availability

PBSS5350T-QR is available at Aetrix Electronics and suitable for automotive body control modules, USB-C PD adapters, industrial 24 V DC/DC converters, and medical LDO regulators requiring stable component supply with full AEC-Q101 traceability and long-term lifecycle support.

Supply support for PBSS5350T-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, reliable discrete, logic, and MOSFET devices optimized for automotive, industrial, and mobile applications.

PBSS5350T-QR belongs to Nexperia's Automotive-Qualified Low V_CE(sat) Transistor product line, engineered specifically for high-efficiency power switching in safety-critical and thermally demanding environments.

FAQ

What is the maximum pulsed collector current rating for PBSS5350T-QR?

The repetitive peak collector current (I_CRM) is −3 A under pulsed conditions with duty cycle δ ≤ 0.25 and pulse width t_p ≤ 100 ms. Peak single-pulse current reaches −5 A for t_p ≤ 1 ms, as specified in Table 5 of the datasheet. These values assume proper PCB thermal management per the defined mounting conditions.

Does PBSS5350T-QR require a base resistor in typical switching applications?

Yes - a series base resistor is required to limit base current to ≤−300 mA peak for −3 A collector drive, preventing base-emitter junction damage. Typical value is 10 Ω when driven from a 3.3 V logic source, ensuring I_B/I_C = 10 for guaranteed saturation per Figure 5 and Table 7 characteristics.

How does the thermal resistance change with PCB copper area?

R_th(j-a) improves from 417 K/W (standard FR4, no extra copper) to 260 K/W (1 cm² collector pad), 230 K/W (6 cm² pad), and 104 K/W under pulsed conditions. This direct correlation allows designers to trade PCB area for thermal headroom - critical for fanless automotive ECUs.

Is PBSS5350T-QR pin-compatible with its NPN complement PBSS4350T-Q?

No - PBSS4350T-Q uses identical SOT23 package and pinout (1: Base, 2: Emitter, 3: Collector), but polarity reversal means external circuit topology must invert emitter/collector connections. Both share same footprint and marking layout, enabling layout reuse in complementary designs.

PBSS5350T-QR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 390mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: 1.2 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5350T-QR FAQ

1.How can I place an order for PBSS5350T-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5350T-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5350T-QR reliable?

The price and inventory of PBSS5350T-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5350T-QR is usually 5 days.

3.What payment methods are accepted for PBSS5350T-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5350T-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5350T-QR?

PBSS5350T-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5350T-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5350T-QR?

For technical support, including PBSS5350T-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5350T-QR requirements.

6.How does Aetrix verify that PBSS5350T-QR is sourced from the original manufacturer or authorized distributors?

All PBSS5350T-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5350T-QR meets industry standards.

7.What is the process for return or replacement of PBSS5350T-QR?

All PBSS5350T-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5350T-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5350T-QR part is unused and in its original packaging.

Return procedure for PBSS5350T-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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