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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5350TVL

Name: PBSS5350TVL
Brand: Nexperia USA Inc.
SKU: PBSS5350TVL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5350TVL

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS5350TVL.pdf

Description:: TRANS PNP 50V 2A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5350TVL from Nexperia is a PNP low V_CEsat transistor in SOT23 package, designed for high-efficiency power switching at up to 50 V and −3 A peak pulsed current. It delivers R_CEsat as low as 90 mΩ at −2 A/−200 mA drive, supports LDO linear regulation with <−390 mV V_CEsat at −3 A/−300 mA, and operates across −65 °C to +150 °C ambient range.

For engineers reviewing the PBSS5350TVL datasheet, PBSS5350TVL pinout, PBSS5350TVL application, or PBSS5350TVL equivalent, this device is selected for low-dropout supply switching, battery charger control, and DC/DC converter synchronous rectification where thermal efficiency and compact footprint are critical.

Technical Context

This PNP transistor uses epitaxial planar die construction optimized for low saturation resistance and high current gain (h_FE ≥ 80 at −3 A). Its V_CEsat remains below −390 mV under full-rated pulsed conditions (t_p ≤ 300 µs, δ ≤ 0.02), enabling minimal conduction loss in high-duty-cycle switching.

The device features V_(BR)CEO = −50 V and V_(BR)CBO = −50 V, with I_CBO ≤ −100 nA at 25 °C, ensuring stable blocking in medium-voltage bias networks. Thermal resistance R_th(j-a) is 417 K/W on standard FR4, dropping to 104 K/W under pulsed operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit in high-side switch designs.
I_CRM	−3 A - Repetitive peak collector current under pulsed conditions (t_p ≤ 100 ms, δ ≤ 0.25); supports burst-mode load switching.
R_CEsat	90–135 mΩ - Equivalent on-resistance at −2 A/−200 mA; determines conduction loss and self-heating in continuous duty.
h_FE	≥ 80 - DC current gain at −3 A/−300 mA drive; enables low-base-drive-current control in space-constrained layouts.
V_CEsat	≤ −390 mV - Saturation voltage at −3 A/−300 mA; enables <0.4 V dropout in linear regulators and low-loss reverse-polarity protection.
f_T	100 MHz - Transition frequency at −5 V V_CE, −100 mA I_C; supports fast turn-off in PWM frequencies up to ~10 MHz.
C_c	35 pF - Collector capacitance at −10 V V_CB; limits switching speed in high-frequency applications but aids EMI filtering.

Pinout & Package

Package: SOT23 (TO-236AB), surface-mounted plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, 3-terminal configuration.

Pin/Terminal	Circuit Role	Design Meaning
1	Base (B)	Control input requiring −300 mA peak drive for full saturation; connected to microcontroller GPIO or driver IC output.
2	Emitter (E)	High-side reference node; tied to positive supply rail in high-side switch configurations or ground in emitter-follower LDOs.
3	Collector (C)	Switched output node; carries −3 A pulsed load current; requires thermal pad area per PCB layout guidelines (e.g., 1 cm² copper for 260 K/W R_th(j-a)).

Key Features

Feature	Design Value
Low V_CEsat	≤ −390 mV at −3 A/−300 mA ensures <0.4 V dropout in linear regulators and minimizes I²R heating in battery charging paths.
High current capability	−3 A repetitive peak rating supports DC/DC converter synchronous rectification and high-current load switching without derating.
Stable h_FE over temperature	h_FE ≥ 80 maintained from −55 °C to +150 °C, enabling reliable base drive design across industrial ambient ranges.
Low leakage	I_CBO ≤ −100 nA at 25 °C ensures negligible standby current in always-on power management circuits.
Fast switching	f_T = 100 MHz allows clean turn-off in PWM-controlled loads up to multi-MHz frequencies with controlled rise/fall times.

Applications

Power Management Switching

Linear Voltage Regulation (LDO)

Use Scenario: High-side load switch controlling 12 V/2 A motor driver enable path in portable instrumentation.

IC Role / Device Role / Timing Role: PNP transistor configured as active-low high-side switch, driven by MCU GPIO with base resistor network.

Use Value: V_CEsat ≤ −320 mV at −2 A/−100 mA reduces power dissipation to <640 mW, eliminating need for heatsink in sealed enclosures.

Use Scenario: Low-dropout linear regulator delivering 3.3 V @ 1.5 A from 5 V input in FPGA core supply.

IC Role / Device Role / Timing Role: Pass element in emitter-follower configuration with feedback-controlled base bias.

Use Value: R_CEsat of 90–135 mΩ enables <200 mV dropout at full load, improving efficiency over standard PNP LDOs by >15%.

Battery Charger Control

DC/DC Converter Synchronous Rectification

Use Scenario: Reverse-polarity and overvoltage protection circuit in USB-C PD 20 W charger input stage.

IC Role / Device Role / Timing Role: PNP-based ideal diode controller front-end with fast turn-off for fault isolation.

Use Value: V_(BR)CEO = −50 V withstands transient surges up to ±40 V; V_BEsat ≤ −1.2 V ensures robust gate drive for external MOSFETs.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V flyback converter operating at 250 kHz.

IC Role / Device Role / Timing Role: Active clamp and freewheeling switch replacing Schottky diode in secondary winding return path.

Use Value: f_T = 100 MHz supports clean zero-voltage switching transitions; C_c = 35 pF suppresses ringing without added snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS5350MUTBG	V_CEsat = −450 mV @ −3 A/−300 mA; R_CEsat = 110–160 mΩ; same SOT23 package.	Slightly higher saturation voltage increases conduction loss by ~15% at full load.	Preferred when ON Semi's qualification traceability or automotive-grade variants (e.g., NSS5350MUTBG-Q) are required.
Diodes Incorporated DXT5350Z-13	V_CEsat = −420 mV @ −3 A/−300 mA; h_FE = 60–120; TO-236AB package with identical pinout.	Lower minimum h_FE demands higher base drive current; wider h_FE spread complicates consistent bias design.	Selected for cost-sensitive consumer power supplies where tighter h_FE tolerance is not critical.

Compared with NSS5350MUTBG and DXT5350Z-13, PBSS5350TVL offers the lowest verified V_CEsat (≤ −390 mV) and tightest R_CEsat range (90–135 mΩ), making it optimal for thermally constrained LDOs and high-efficiency battery charging where <0.4 V dropout and predictable base drive are mandatory.

Availability

PBSS5350TVL is available at Aetrix Electronics and suitable for power management switching, linear voltage regulation (LDO), battery charger control, and DC/DC converter synchronous rectification requiring stable component supply and guaranteed long-term sourcing.

Supply support for PBSS5350TVL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PBSS5350TVL belongs to Nexperia's low V_CEsat transistor family, engineered specifically for energy-efficient power switching in space-constrained consumer, industrial, and computing applications where thermal performance and footprint are critical.

FAQ

What is the maximum continuous collector current for PBSS5350TVL?

The absolute maximum continuous collector current (I_C) is −2 A at T_amb ≤ 25 °C with standard FR4 mounting. Derating applies above 25 °C: junction temperature must remain ≤ 150 °C, and power dissipation is limited to 300 mW on standard PCB layout. For sustained −2 A operation, thermal pad area or forced airflow is required.

Can PBSS5350TVL be used in automotive applications?

No-PBSS5350TVL is explicitly non-automotive qualified per Nexperia's revision history (v.4, Jan 2023). It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond −65 °C to +150 °C ambient. For automotive use, Nexperia recommends PBSS5350T-Q series variants with full AEC-Q101 compliance and PPAP documentation.

How does PBSS5350TVL compare to its NPN complement PBSS4350T?

PBSS4350T is the NPN counterpart with matching V_CEO = 50 V, I_CRM = 3 A, and R_CEsat ≈ 90–135 mΩ, but optimized for low-side switching. Key differences include polarity (NPN vs. PNP), base-emitter forward voltage (~0.7 V vs. ~−0.85 V), and typical application topology-PBSS4350T drives loads to ground, while PBSS5350TVL switches high-side rails or serves as emitter-follower pass elements.

What PCB layout practices optimize thermal performance for PBSS5350TVL?

For best thermal performance, use ≥1 cm² copper pour connected to the collector pad (Pin 3) on inner or outer layers, with ≥4 thermal vias (0.3 mm diameter) to internal ground/power planes. Maintain solder mask opening per Nexperia's sot023_fr footprint (0.6 mm pad width × 0.7 mm length), and avoid narrow traces on collector path to minimize IR drop and localized heating.

PBSS5350TVL Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 2 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 390mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: -

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS5350TVL FAQ

1.How can I place an order for PBSS5350TVL through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5350TVL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5350TVL reliable?

The price and inventory of PBSS5350TVL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5350TVL is usually 5 days.

3.What payment methods are accepted for PBSS5350TVL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5350TVL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5350TVL?

PBSS5350TVL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5350TVL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5350TVL?

For technical support, including PBSS5350TVL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5350TVL requirements.

6.How does Aetrix verify that PBSS5350TVL is sourced from the original manufacturer or authorized distributors?

All PBSS5350TVL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5350TVL meets industry standards.

7.What is the process for return or replacement of PBSS5350TVL?

All PBSS5350TVL units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5350TVL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5350TVL part is unused and in its original packaging.

Return procedure for PBSS5350TVL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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