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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5350X,115

Name: PBSS5350X,115
Brand: Nexperia USA Inc.
SKU: PBSS5350X,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5350X,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: PBSS5350X,115.pdf

Description:: TRANS PNP 50V 3A SOT-89

Quantity:: RFQ Add To RFQ list

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Inventory:14,414

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Product details

Overview

PBSS5350X,115 from Nexperia is a PNP low V_CEsat transistor in SOT89 package, designed for high-efficiency switching in 50 V, 3 A power paths. It delivers R_CEsat = 90–135 mΩ at I_C = −2 A / I_B = −200 mA, supports AEC-Q101 automotive qualification, and operates up to T_j = 150 °C - used in DC/DC converters and inductive load drivers.

For engineers reviewing the PBSS5350X,115 datasheet, PBSS5350X,115 pinout, PBSS5350X,115 application, or PBSS5350X,115 equivalent, key selection criteria include verified V_CEsat performance under pulsed conditions (tp ≤ 300 µs), thermal resistance on FR4 PCB (R_th(j-a) = 125 K/W with 1 cm² collector pad), and AEC-Q101 compliance for automotive-grade reliability.

Technical Context

This PNP bipolar transistor uses epitaxial base technology to achieve low saturation voltage and high current gain (h_FE = 80 min at I_C = −3 A). Its structure enables stable operation under repetitive pulsed loads with duty cycle ≤ 0.02 and peak I_C = −5 A, limited by junction temperature.

The device features open-base V_CEO = −50 V and V_CB0 = −50 V ratings, emitter-base breakdown V_EBO = −5 V, and low leakage (I_CES ≤ −100 nA at V_CE = −50 V), supporting robust blocking in supply-line switching and battery charger reverse-polarity protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - maximum safe collector-emitter voltage with base open; defines blocking capability in high-side switch configurations
I_C	−3 A continuous - rated DC collector current; supports sustained load switching in LED backlighting and peripheral drivers
R_CEsat	90–135 mΩ at I_C = −2 A / I_B = −200 mA - directly determines conduction loss and thermal rise in compact PCB layouts
h_FE	80 min at I_C = −3 A - ensures sufficient current gain for reliable saturation with moderate base drive in low-voltage systems
T_j max	150 °C - junction temperature limit enabling operation in under-hood automotive environments and thermally constrained enclosures
AEC-Q101	Qualified - validated for automotive applications including temperature cycling, HTRB, and ESD per JESD22 standards

Pinout & Package

SOT89 (SC-62) plastic surface-mount package: 4.5 mm × 2.5 mm × 1.5 mm body, 1.5 mm lead pitch, integrated heat-dissipating tab on pin 2 (collector).

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter (E)	Current exit path; connects to ground or low-side return in PNP high-side switch topologies
2	Collector (C)	Main power output terminal; electrically and thermally connected to large copper pad for heat dissipation
3	Base (B)	Control input; requires −300 mA drive for full saturation at I_C = −3 A, enabling logic-level compatibility with microcontrollers

Key Features

Feature	Design Value
Low V_CEsat	V_CEsat ≤ −390 mV at I_C = −3 A / I_B = −300 mA - reduces conduction loss by >40% vs. standard PNP transistors in 12 V supply rails
High I_CM	−5 A peak (pulsed) - supports motor startup surges and relay coil energization without secondary protection
Thermal performance	R_th(j-sp) = 16 K/W - enables direct thermal coupling to PCB copper, critical for fanless industrial power modules
Automotive qualification	AEC-Q101 compliant - certified for use in engine control units, body electronics, and ADAS power stages
Package footprint	SOT89 with 1.5 mm pitch - compatible with standard reflow profiles and wave soldering; no lead-free assembly restrictions

Applications

DC/DC Converter Switch

Battery Charger Control

Use Scenario: High-efficiency synchronous buck converter in automotive infotainment power supply.

IC Role / Device Role / Timing Role: PNP high-side switch controlling input rail during light-load discontinuous conduction mode.

Use Value: 90 mΩ R_CEsat minimizes dropout and thermal stress at 2 A load, extending MOSFET gate driver lifetime.

Use Scenario: Reverse-polarity protection and charge-path enable in 24 V lead-acid battery charger.

IC Role / Device Role / Timing Role: Series pass element blocking reverse current while conducting forward charging current.

Use Value: −50 V V_CEO withstands load dump transients; −100 nA I_CES prevents standby drain in always-on systems.

LCD Backlight Driver

Inductive Load Driver

Use Scenario: Constant-current LED string driver in commercial display panels.

IC Role / Device Role / Timing Role: Linear current regulator with PWM-modulated base drive for brightness control.

Use Value: Stable h_FE across −40 °C to +100 °C ensures consistent LED current without feedback compensation.

Use Scenario: Relay and buzzer driver in industrial PLC output modules.

IC Role / Device Role / Timing Role: Low-impedance switch clamping inductive kickback via external flyback diode.

Use Value: −5 A I_CM handles 10× rated coil current during turn-off, eliminating need for snubber RC networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS5350M3T5G	V_CEO = −50 V, I_C = −3 A, R_CEsat = 110–170 mΩ - higher typical saturation resistance; SOT-89-3 package identical	Lower efficiency in high-duty-cycle DC/DC converters due to +20 mΩ median R_CEsat; same AEC-Q101 qualification	Select when cost sensitivity outweighs thermal margin; verify base drive capability for h_FE = 60 min at I_C = −3 A
Diodes Incorporated DXT53500QE-13	V_CEO = −50 V, I_C = −3 A, R_CEsat = 100–150 mΩ; TO-252 (DPAK) package - larger footprint, lower R_th(j-a) = 60 K/W	Better thermal performance in high-ambient environments but requires PCB area increase of 3.5× vs. SOT89	Choose for industrial motor drives where board space allows and junction temperature must stay <125 °C at 3 A continuous

Compared with NSS5350M3T5G and DXT53500QE-13, PBSS5350X,115 offers the lowest R_CEsat in SOT89, enabling highest power density in space-constrained automotive modules while maintaining AEC-Q101 compliance and proven reflow reliability.

Availability

PBSS5350X,115 is available at Aetrix Electronics and suitable for DC/DC converters, battery chargers, and inductive load drivers requiring stable component supply across automotive production ramps and industrial equipment lifecycles.

Supply support for PBSS5350X,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

PBSS5350X,115 belongs to Nexperia's Automotive-qualified PNP low V_CEsat transistor family, engineered specifically for efficient, thermally robust switching in 12–48 V power systems where space and thermal headroom are constrained.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is −0.5 A per datasheet limiting values. For continuous DC operation at I_C = −3 A, recommended I_B is −300 mA to ensure full saturation while maintaining junction temperature below 150 °C on a 1 cm² FR4 copper pad. Exceeding −500 mA risks permanent degradation of h_FE and increased V_BEsat.

Can PBSS5350X,115 replace an NPN transistor in the same circuit?

No - PBSS5350X,115 is a PNP device with inverted polarity: emitter connects to higher potential, collector to load. Direct substitution for an NPN requires flipping the circuit topology, reversing biasing, and verifying that V_EB and I_B drive match. Its NPN complement is PBSS4350X, not a drop-in replacement.

Is the SOT89 package lead-free and RoHS-compliant?

Yes - PBSS5350X,115 is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The SOT89 package uses matte tin plating over nickel barrier, qualified for standard Pb-free reflow profiles up to 260 °C peak.

How does thermal derating work above 25 °C ambient?

Power dissipation must be linearly reduced above 25 °C using R_th(j-a) = 125 K/W (1 cm² FR4 pad): P_tot = (150 °C − T_amb) / 125 K/W. At 85 °C ambient, max continuous power drops to 0.52 W, limiting I_C to ~1.8 A at V_CEsat = 300 mV - pulse operation extends usable current range per Fig. 1 derating curves.

PBSS5350X,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 390mV @ 300mA, 3A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1A, 2V

Power - Max:: 1.6 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89

PBSS5350X,115 FAQ

1.How can I place an order for PBSS5350X,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5350X,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5350X,115 reliable?

The price and inventory of PBSS5350X,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5350X,115 is usually 5 days.

3.What payment methods are accepted for PBSS5350X,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5350X,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5350X,115?

PBSS5350X,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5350X,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5350X,115?

For technical support, including PBSS5350X,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5350X,115 requirements.

6.How does Aetrix verify that PBSS5350X,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5350X,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5350X,115 meets industry standards.

7.What is the process for return or replacement of PBSS5350X,115?

All PBSS5350X,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5350X,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5350X,115 part is unused and in its original packaging.

Return procedure for PBSS5350X,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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