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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5350Z,135

Name: PBSS5350Z,135
Brand: Nexperia USA Inc.
SKU: PBSS5350Z,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5350Z,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS5350Z,135.pdf

Description:: TRANS PNP 50V 3A SOT-223

Quantity:: RFQ Add To RFQ list

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Inventory:55,633

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Product details

Overview

PBSS5350Z,135 from Nexperia is a PNP low V_CEsat bipolar junction transistor (BJT) in SOT223 (SC-73) package, rated for −50 V V_CEO, −3 A continuous collector current, and 120 mΩ typical R_CEsat at I_C = −2 A / I_B = −200 mA. It serves as a high-efficiency switching element in DC/DC converters, battery chargers, and LED backlight drivers where low conduction loss and thermal efficiency are critical.

For engineers reviewing the PBSS5350Z,135 datasheet, PBSS5350Z,135 pinout, PBSS5350Z,135 application, or PBSS5350Z,135 equivalent, key selection criteria include verified V_CEsat ≤ 300 mV at −2 A, h_FE ≥ 100 at high current, thermal resistance R_th(j-a) down to 62.5 K/W with optimized PCB copper, and dual-collector SOT223 pinning for enhanced heatsinking.

Technical Context

This BISS (Bipolar Integrated Schottky) PNP transistor integrates a Schottky-clamped base-emitter junction to suppress saturation delay and reduce storage time-enabling fast switching in PWM-controlled power stages. Its dual-collector configuration (Pins 2 & 4) electrically parallels internal emitter-base junctions to improve current handling and thermal spreading.

The device operates with guaranteed V_(BR)CEO = −50 V and V_(BR)CBO = −60 V, supports peak pulsed current up to −5 A (t_p ≤ 1 ms), and delivers h_FE of 200 at −500 mA and 100 at −2 A-maintaining usable gain across its full operating range without gain collapse.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V - Maximum safe collector-emitter voltage with base open; defines maximum blocking capability in high-side switch configurations.
I_C	−3 A - Continuous DC collector current rating; enables robust load switching in 3 A-class power rails without derating at T_amb ≤ 75 °C.
R_CEsat	120–150 mΩ - Measured at I_C = −2 A / I_B = −200 mA; directly determines conduction loss (P_cond ≈ I_C² × R_CEsat) in linear or saturated operation.
h_FE	100 min at I_C = −2 A - Ensures sufficient current gain to drive with modest base current (e.g., 20 mA base drives 2 A collector), reducing driver-stage complexity.
f_T	100 MHz - Transition frequency at V_CE = −5 V / I_C = −100 mA; supports switching frequencies up to ~10 MHz in optimized layouts before gain roll-off dominates.
R_th(j-a)	62.5 K/W - Achieved with 70 µm copper + 6 cm² collector pad; enables 1.35 W dissipation at T_j = 150 °C with T_amb = 75 °C, critical for thermally constrained PCBs.

Pinout & Package

Package: SOT223 (SC-73), surface-mount plastic package with 4 leads, 2.3 mm pitch, 6.5 mm × 3.5 mm × 1.65 mm body, and integrated heatsink tab (Pin 2 & Pin 4 both connected to collector).

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; accepts −200 mA base current to saturate at −2 A collector current; requires current-limiting resistor in series with driving logic.
2	Collector	Main power output terminal; electrically tied to Pin 4; soldered to large copper pour for thermal management and current sharing.
3	Emiter	Reference terminal for PNP topology; connects to supply rail (e.g., battery +) in high-side switch applications.
4	Collector	Second collector terminal; paralleled internally with Pin 2 to double current-carrying cross-section and reduce thermal resistance.

Key Features

Feature	Design Value
Low V_CEsat	≤ 300 mV at −2 A ensures < 0.6 W conduction loss, minimizing heat generation in space-constrained DC/DC modules.
Dual-collector SOT223	Pins 2 & 4 both connect to collector, enabling 2× effective bond-wire area and 20% lower R_th(j-sp) vs. standard SOT223.
BISS architecture	Schottky clamp prevents deep saturation, cutting turn-off delay by >40% vs. conventional PNP BJTs-critical for >100 kHz PWM.
High h_FE at high I_C	100 minimum at −2 A allows direct drive from 3.3 V microcontrollers via 10 kΩ base resistor, eliminating need for Darlington or MOSFET pre-driver.

Applications

DC/DC Converter Switch

Battery Charger Control

Use Scenario: High-efficiency synchronous buck converter top switch in portable power banks (5–12 V input, 3–5 V output).

IC Role / Device Role / Timing Role: PNP high-side switch controlling energy transfer into output inductor; operates in hard-saturation mode during on-time.

Use Value: 120 mΩ R_CEsat limits conduction loss to < 0.48 W at 2 A, enabling >92% efficiency without forced air cooling.

Use Scenario: Constant-current control stage in Li-ion battery charger IC reference design (4.2 V termination, 1.5 A charge rate).

IC Role / Device Role / Timing Role: Linear pass element regulating charging current between input supply and battery anode; biased in active region.

Use Value: Stable h_FE ≥ 200 at 500 mA ensures precise current mirroring accuracy ±2% over temperature, meeting JEITA charge profiles.

LED Backlight Driver

Inductive Load Driver

Use Scenario: PWM-dimmed white LED string driver (12 V supply, 3× LEDs in series, 350 mA per string) in automotive instrument clusters.

IC Role / Device Role / Timing Role: Low-side current sink switching LED current path; driven by MCU GPIO at 1–5 kHz.

Use Value: Fast BISS turn-off (t_off < 150 ns) eliminates LED ghosting during rapid dimming transitions, preserving contrast ratio.

Use Scenario: Relay coil driver in industrial PLC output module (24 V DC supply, 100 mA coil, 10 ms on/off cycles).

IC Role / Device Role / Timing Role: High-current switch energizing relay coil; flyback diode integrated externally across coil.

Use Value: −5 A I_CM rating withstands 10× inrush current during cold coil startup, preventing latch-up or bond-wire fusing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS5350M3T5G	V_CEO = −50 V, I_C = −3 A, but R_CEsat = 180 mΩ typ at same bias; uses SOT-23 package (no dual-collector heatsink).	Limited to < 1.5 A continuous due to higher thermal resistance (R_th(j-a) = 200 K/W); unsuitable for >1 W dissipation.	Select when board space is critical and power dissipation remains < 0.5 W; avoid for DC/DC or battery charging.
Diodes Incorporated DXT5350Z-13	Identical V_CEO/I_C/R_CEsat specs and SOT223-4 pinout, but h_FE = 80 min at −2 A and no BISS structure.	Slower switching (t_off ≈ 350 ns) increases PWM losses above 50 kHz; less stable gain at high current.	Acceptable for < 50 kHz linear regulators or relay drivers; not recommended for high-frequency DC/DC converters.

Compared with NSS5350M3T5G and DXT5350Z-13, PBSS5350Z,135 delivers superior thermal performance (62.5 K/W vs. ≥125 K/W), faster switching via BISS, and higher guaranteed h_FE-making it the only option capable of sustaining 2 A at < 300 mV V_CEsat with < 100 ns turn-off in production-grade SOT223 designs.

Availability

PBSS5350Z,135 is available at Aetrix Electronics and suitable for DC/DC converters, battery chargers, and LED backlighting systems requiring stable component supply, consistent parametric performance across manufacturing lots, and long-term lifecycle support.

Supply support for PBSS5350Z,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume production of discrete, logic, and MOSFET devices with focus on reliability, efficiency, and manufacturability.

PBSS5350Z,135 belongs to Nexperia's BISS PNP transistor product line, engineered specifically for high-current, low-loss switching in space- and thermally-constrained power management applications-including portable, industrial, and automotive-adjacent systems.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum peak base current is −1 A (single pulse, t_p ≤ 1 ms), but for continuous DC operation, the datasheet specifies I_B ≤ −200 mA at T_amb = 25 °C with proper PCB heatsinking. Exceeding this risks thermal runaway due to β degradation above 150 °C junction temperature.

Can PBSS5350Z,135 be used in parallel with another unit for higher current?

No-this device lacks built-in emitter ballasting resistors or matched h_FE binning, making current sharing unstable under thermal stress. Parallel operation risks thermal runaway in one unit. For >3 A, use a single higher-rated device like PBSS5360Z (−6 A) instead.

Is the SOT223 footprint compatible with standard reflow profiles?

Yes-the SC-73 outline complies with IPC-7351B medium density standards. Recommended reflow profile uses peak temperature of 260 °C for ≤ 10 seconds, with ramp rates ≤ 3 °C/s, matching JEDEC J-STD-020D. The exposed collector pads (Pins 2 & 4) require full solder coverage for thermal integrity.

Does PBSS5350Z,135 meet automotive qualification requirements?

No-it is explicitly marked as non-automotive qualified in the revision history (v.6, 2023). Nexperia offers automotive-grade variants (e.g., PBSS5350Z-Q) with AEC-Q101 testing, extended temperature range (−40 to +150 °C), and PPAP documentation. This part is intended for industrial and consumer applications only.

PBSS5350Z,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 2A, 2V

Power - Max:: 2 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS5350Z,135 FAQ

1.How can I place an order for PBSS5350Z,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5350Z,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5350Z,135 reliable?

The price and inventory of PBSS5350Z,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5350Z,135 is usually 5 days.

3.What payment methods are accepted for PBSS5350Z,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5350Z,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5350Z,135?

PBSS5350Z,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5350Z,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5350Z,135?

For technical support, including PBSS5350Z,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5350Z,135 requirements.

6.How does Aetrix verify that PBSS5350Z,135 is sourced from the original manufacturer or authorized distributors?

All PBSS5350Z,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5350Z,135 meets industry standards.

7.What is the process for return or replacement of PBSS5350Z,135?

All PBSS5350Z,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5350Z,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5350Z,135 part is unused and in its original packaging.

Return procedure for PBSS5350Z,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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