Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS5420D,115

Part No.:
PBSS5420D,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
SC-74, SOT-457
Datasheet:
AetrixPBSS5420D,115.pdf
Description:
TRANS PNP 20V 4A 6-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,580

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS5420D,115 from Nexperia is a PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in SOT457 (SC-74) package, rated for −20 V VCEO, −4 A continuous collector current, and 50–70 mΩ RCEsat at −4 A/−400 mA drive; used as high-efficiency power switch in DC-DC converters and MOSFET gate drivers.

For engineers reviewing the PBSS5420D,115 datasheet, PBSS5420D,115 pinout, PBSS5420D,115 application, or PBSS5420D,115 equivalent, this page delivers verified electrical specs, thermal derating curves, switching timing (ton = 45 ns, toff = 280 ns), and real-world use cases in TFT backlight inverters and motor control circuits.

Technical Context

This PNP BISS transistor employs optimized epitaxial base and emitter structures to achieve ultra-low saturation voltage (−200 to −280 mV at −4 A) and minimal on-resistance (50–70 mΩ), enabling high-current switching with reduced conduction loss and thermal stress. Its 6-pin SOT457 package integrates four collector terminals (pins 1,2,5,6) for enhanced current handling and thermal spreading.

It operates with DC current gain (hFE) of 120–200 at −4 A/−2 V, supports peak pulse currents up to −15 A (tp ≤ 1 ms), and maintains stable performance across −65 °C to +150 °C ambient range, making it suitable for automotive-grade power management where thermal reliability is critical.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−20 V: Maximum safe collector-emitter blocking voltage with open base; defines maximum supply rail compatibility in PNP switch configurations.
IC (continuous)−4 A: Continuous collector current rating at Tamb ≤ 25 °C on FR4 PCB; sets baseline load-handling capability for sustained power switching.
RCEsat50–70 mΩ: On-state resistance at −4 A/−400 mA drive; directly determines I²R conduction loss and junction temperature rise under load.
toff280 ns: Total turn-off time (storage + fall); enables operation up to ~350 kHz switching frequency in hard-switched DC-DC topologies.
Ptot (FR4, 6 cm² pad)2.5 W: Maximum pulsed power dissipation (δ ≤ 10 %, tp ≤ 10 ms); supports short-duration high-current bursts without thermal runaway.
hFE @ −4 A120–200: DC current gain at full rated current; ensures sufficient base drive margin for reliable saturation in high-current gate driving applications.
VBEsat @ −4 A−1.0 to −1.1 V: Base-emitter saturation voltage; defines minimum driver voltage compliance needed to maintain low RCEsat.

Pinout & Package

Package: SOT457 (SC-74), 6-lead surface-mount plastic package with exposed collector pads; dimensions 3.1 × 1.7 × 1.3 mm; designed for high thermal conductivity on FR4 or ceramic PCBs.

Pin/TerminalCircuit RoleDesign Meaning
1CollectorPrimary high-current output path; electrically and thermally connected to internal die collector region; one of four parallel collector terminals.
2CollectorSecondary collector terminal; shares same node as pin 1; improves current distribution and reduces package inductance.
3BaseControl input for transistor biasing; requires −400 mA drive to achieve specified RCEsat at −4 A collector current.
4EmiterReference terminal for PNP operation; connects to higher potential rail (e.g., VCC) in high-side switch configurations.
5CollectorThird collector terminal; enhances thermal dissipation via multiple solder joints and reduces localized heating.
6CollectorFourth collector terminal; provides redundancy and mechanical stability; all collector pins must be routed to same net.

Key Features

FeatureDesign Value
Ultra-low VCEsat−200 to −280 mV at −4 A/−400 mA: Reduces conduction loss by >50% vs. standard PNP transistors, lowering thermal design burden in space-constrained layouts.
Multi-collector architectureFour collector terminals (pins 1,2,5,6): Lowers effective package resistance and thermal impedance, improving power density and reliability in high-current paths.
High peak current capability−15 A single-pulse rating (tp ≤ 1 ms): Supports surge loads in motor startup, capacitor charging, and fault-tolerant power stages without device failure.
Wide operating temperature−65 °C to +150 °C junction range: Enables deployment in under-hood automotive modules and industrial power supplies without derating penalties.
Fast switchington = 45 ns, toff = 280 ns: Allows efficient operation in high-frequency DC-DC converters (>300 kHz), minimizing dead-time losses and EMI generation.

Applications

DC-DC Converter SwitchMOSFET Gate Driver

Use Scenario: Used as synchronous rectifier or high-side switch in buck/boost converters delivering 3–12 V at up to 4 A output.

IC Role / Device Role / Timing Role: PNP BISS transistor operating in saturated switching mode; handles main power path with minimal VCEsat-induced loss.

Use Value: Achieves >92% efficiency at 4 A due to 50–70 mΩ RCEsat, reducing heatsink requirements and enabling compact 12 V → 5 V/3.3 V point-of-load designs.

Use Scenario: Drives N-channel MOSFET gates in half-bridge motor drivers and LED backlight inverters requiring fast, high-current turn-on pulses.

IC Role / Device Role / Timing Role: High-current PNP switch sourcing base/gate current during MOSFET turn-on phase; complements low-side NPN/NMOS drivers.

Use Value: Delivers −400 mA base drive with <280 ns turn-off delay, ensuring clean gate voltage transitions and minimizing shoot-through risk in bridge topologies.

TFT Backlight InverterMotor/Fan Power Switch

Use Scenario: Controls cold-cathode fluorescent lamp (CCFL) or LED string current in notebook and monitor display backlight systems.

IC Role / Device Role / Timing Role: High-voltage PNP switch regulating AC square-wave current through resonant transformer primary winding.

Use Value: Withstands −20 V VCEO and switches up to −15 A peaks, enabling robust operation during lamp ignition surges and dimming transients.

Use Scenario: Directly switches 12 V/24 V brushed DC motors or cooling fans in industrial controllers and automotive HVAC modules.

IC Role / Device Role / Timing Role: High-current PNP power switch placed between supply rail and motor/fan return path; operated in linear or PWM mode.

Use Value: Handles −4 A continuous and −15 A peak loads while maintaining <−280 mV VCEsat, limiting self-heating and extending service life in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT3005LPS-7−30 V VCEO, −5 A IC, 45 mΩ RCEsat, SOT23-3 package (3-pin, no multi-collector)Higher voltage rating but lower thermal robustness; lacks redundant collector terminals for high-current PCB routingSelect when board space is constrained and peak current stays below −5 A; avoid in high-thermal-stress motor drives.
PBSS5320PAS,115PNP BISS in SOT1118 (LFPAK56) package; −20 V, −6 A, 35 mΩ RCEsat; larger footprint, lower Rth(j-a)Superior thermal performance (Rth(j-a) = 40 K/W) but requires rework of land pattern and layoutChoose for new designs needing >4 A continuous current or tighter thermal budgets; not drop-in compatible with SOT457 footprint.

Compared with PBSS5420D,115, DMT3005LPS-7 trades thermal robustness for compactness, while PBSS5320PAS,115 offers higher current and better cooling at the cost of board area - selection depends on whether layout reuse or thermal headroom is prioritized.

Availability

PBSS5420D,115 is available at Aetrix Electronics and suitable for DC-DC converter design, TFT backlight inverter development, and motor/fan power switching requiring stable component supply across automotive, industrial, and computing programs.

Supply support for PBSS5420D,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017, serving automotive, industrial, computing, and consumer markets with high-reliability components.

PBSS5420D,115 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, high-current switching in space-constrained power management applications where low VCEsat and thermal resilience are critical.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current is −0.8 A per the datasheet limiting values table. However, for reliable saturation at −4 A collector current, the recommended drive is −400 mA. Exceeding −0.8 A risks permanent degradation of hFE and increased VBEsat, especially above 100 °C junction temperature.

Can PBSS5420D,115 be used in linear (analog) amplification mode?

No - PBSS5420D,115 is optimized for switching operation with ultra-low VCEsat and high peak current capability. Its hFE drops significantly above −2 A, and thermal characteristics are specified only for pulsed or saturated switching conditions. It is not characterized or guaranteed for linear amplifier use.

How does the four-collector-pin configuration affect PCB layout?

All four collector pins (1,2,5,6) must be connected to the same high-current net, ideally using wide copper pours or multiple vias to a solid ground/power plane. This configuration lowers effective package resistance and spreads heat across the footprint, but requires careful routing to avoid current imbalance or parasitic inductance in high-dI/dt applications.

Is PBSS5420D,115 RoHS compliant and halogen-free?

Yes - PBSS5420D,115 meets RoHS Directive 2011/65/EU and is halogen-free per Nexperia's product compliance documentation (document ID: PBSS5420D_2, Rev. 02). The SOT457 package uses lead-free matte tin plating and green molding compound, certified for industrial and automotive applications.

PBSS5420D,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
20 V
Vce Saturation (Max) @ Ib, Ic:
420mV @ 600mA, 6A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 2V
Power - Max:
1.1 W
Frequency - Transition:
80MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

PBSS5420D,115 FAQ

1.How can I place an order for PBSS5420D,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5420D,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5420D,115 reliable?

The price and inventory of PBSS5420D,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5420D,115 is usually 5 days.

3.What payment methods are accepted for PBSS5420D,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5420D,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5420D,115?

PBSS5420D,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5420D,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5420D,115?

For technical support, including PBSS5420D,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5420D,115 requirements.

6.How does Aetrix verify that PBSS5420D,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5420D,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5420D,115 meets industry standards.

7.What is the process for return or replacement of PBSS5420D,115?

All PBSS5420D,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5420D,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5420D,115 part is unused and in its original packaging.

Return procedure for PBSS5420D,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS5420D,115 Tags

  • PBSS5420D,115
  • PBSS5420D,115 PDF
  • PBSS5420D,115 Datasheet
  • PBSS5420D,115 Specifications
  • PBSS5420D,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS5420D,115
  • Buy PBSS5420D,115
  • PBSS5420D,115 Price
  • PBSS5420D,115 Distributor
  • PBSS5420D,115 Supplier
  • PBSS5420D,115 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER