Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PBSS5440D,115

Part No.:
PBSS5440D,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
SC-74, SOT-457
Datasheet:
AetrixPBSS5440D,115.pdf
Description:
TRANS PNP 40V 4A 6-TSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,015

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PBSS5440D from Nexperia is a PNP low VCE(sat) bipolar transistor in TSOP6 (SOT457) package, rated for −40 V VCEO, −4 A continuous IC, and 55 mΩ typical RCE(sat). It serves as a high-efficiency power switch in DC-DC converters, motor drivers, and TFT backlight inverters where minimal conduction loss and thermal stress are critical.

For engineers reviewing the PBSS5440D datasheet, PBSS5440D pinout, PBSS5440D application, or PBSS5440D equivalent, key selection criteria include verified −4 A DC current capability, sub-320 mV VCE(sat) at −4 A/−400 mA drive, 6-pin TSOP6 footprint compatibility, and thermal resistance down to 113 K/W with 6 cm² FR4 copper pad - all confirmed per Nexperia's September 2025 product data sheet.

Technical Context

This PNP transistor uses epitaxial planar die construction optimized for low saturation voltage and high current gain (hFE = 30–60 at −6 A). Its switching performance is characterized by 55 ns turn-on time, 320 ns turn-off time, and 110 MHz fT, enabling efficient operation up to several hundred kHz in hard-switched topologies.

The device features symmetrical collector terminals (pins 1, 2, 5, 6), single base (pin 3), and emitter (pin 4), supporting high-current routing with reduced PCB trace inductance. Thermal design leverages dual mounting options: ceramic Al2O3 PCB (350 K/W Rth(j-a)) or FR4 with extended collector pad (113 K/W).

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −40 V: Maximum safe blocking voltage with base open; defines usable bus voltage range in PNP high-side switches.
IC (DC) −4 A: Continuous collector current under standard thermal conditions; supports sustained load switching without derating on 6 cm² FR4 pad.
VCE(sat) −320 mV typ. at −4 A/−400 mA: Low conduction loss enables >95% efficiency in 12 V power stages with <1.3 W dissipation.
RCE(sat) 55 mΩ typ. at −6 A/−600 mA: Enables precise current-sense resistor sizing and minimizes thermal runaway risk in parallel configurations.
fT 110 MHz: Supports fast switching in PWM-driven gate drivers and resonant converters operating below 500 kHz.
toff 320 ns: Limits dead-time requirements in synchronous rectification and half-bridge designs with tight timing margins.
hFE 30–60 at −6 A: Ensures stable base drive design with ≥10× overdrive margin for reliable saturation across temperature.

Pinout & Package

Package: TSOP6 (SOT457), 6-lead surface-mount plastic package with 0.65 mm pitch, 3.1 mm × 2.5 mm body, and exposed collector pads on pins 1, 2, 5, 6 for enhanced thermal transfer.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6 Collector (C) Four paralleled collector terminals reduce bond wire inductance and improve current sharing; enable direct connection to large copper pour for thermal management.
3 Base (B) Single control terminal requiring −400 mA drive for full saturation at −4 A; compatible with standard logic-level or dedicated BJT drivers.
4 Emiter (E) Reference node for biasing; connects to system ground or positive rail depending on high-side/low-side configuration.

Key Features

Feature Design Value
Ultra-low VCE(sat) −320 mV typ. at −4 A reduces conduction loss by >40% vs. standard PNP transistors, directly lowering heatsink requirements.
High peak current rating −15 A pulsed (1 ms) supports inrush current handling in motor start-up and capacitor charging without secondary protection.
Multi-collector topology Four collector pins distribute current and thermal load, improving reliability and enabling compact layout with minimal trace width.
Wide operating temperature −65 °C to +150 °C junction range allows deployment in industrial ambient environments without derating below −40 °C.
Low RCE(sat) variation 55–75 mΩ range across production ensures consistent current sharing in multi-device arrays without individual trimming.

Applications

DC-DC Buck Converter MOSFET Gate Driver

Use Scenario: High-efficiency 12 V to 3.3 V step-down converter for embedded controllers.

IC Role / Device Role / Timing Role: PNP high-side switch controlling synchronous rectifier timing and providing fast turn-off assist.

Use Value: −320 mV VCE(sat) limits conduction loss to 1.3 W at 4 A, enabling passive cooling and reducing output ripple via faster switching transitions.

Use Scenario: Active pull-down stage in high-speed MOSFET gate driver for motor inverter half-bridges.

IC Role / Device Role / Timing Role: Fast-turn-off transistor clamping gate voltage during dead-time to prevent shoot-through.

Use Value: 320 ns toff ensures gate discharge within 500 ns, supporting 200 kHz PWM with 100 ns dead-time margin.

TFT Backlight Inverter DC Fan Power Switch

Use Scenario: High-frequency AC generation for CCFL or LED backlight in industrial displays.

IC Role / Device Role / Timing Role: PNP switch in push-pull oscillator core driving transformer primary winding.

Use Value: 110 MHz fT and 55 ns ton support stable 100–200 kHz operation with minimal phase shift and low EMI.

Use Scenario: On/off control of 24 V DC cooling fans in network equipment enclosures.

IC Role / Device Role / Timing Role: Low-loss power switch replacing mechanical relay or higher-RDS(on) MOSFETs.

Use Value: −4 A continuous rating handles 3 A fan surge without thermal throttling; 55 mΩ RCE(sat) eliminates need for heatsink at 25 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCE(sat) transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS40501MR6T1G −40 V VCEO, −4 A IC, but higher VCE(sat) (−450 mV typ. at −4 A) and no multi-collector layout. Limited thermal performance on FR4; requires larger copper area to match PBSS5440D's 113 K/W Rth(j-a). Choose when legacy footprint compatibility with SOT-23-6 is required and thermal budget allows 15% higher conduction loss.
Diodes Incorporated DXT5440P6-13 −40 V VCEO, −4 A IC, identical pinout, but lower hFE (20–40) and higher RCE(sat) (70–100 mΩ). Needs higher base drive current (−600 mA) for full saturation, increasing driver complexity and power consumption. Choose only if supply chain diversification is prioritized over thermal efficiency and base drive simplicity.

Compared with NSS40501MR6T1G and DXT5440P6-13, PBSS5440D delivers superior thermal performance via its four-collector layout and lowest verified RCE(sat), enabling smaller PCB area, lower driver power, and higher reliability in thermally constrained 4 A power switches.

Availability

PBSS5440D is available at Aetrix Electronics and suitable for DC-DC conversion, MOSFET gate driving, and TFT backlight inverter applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for PBSS5440D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive, industrial, and mobile power management solutions.

PBSS5440D belongs to Nexperia's "Low VCE(sat) Transistor" product line, engineered specifically for high-current, low-loss switching in space-constrained power management circuits where thermal efficiency and PCB real estate are critical.

FAQ

What is the maximum continuous collector current for PBSS5440D under standard PCB conditions?

The PBSS5440D supports −4 A continuous collector current when mounted on an FR4 PCB with a 6 cm² copper pad for the collector terminals, achieving 113 K/W thermal resistance. Without extended copper, the rating drops to −2.5 A at 25 °C ambient per the derating curve in Figure 1.

Can PBSS5440D replace an NPN transistor in a circuit?

No - PBSS5440D is a PNP transistor with inverted polarity: it conducts when the base is driven negative relative to the emitter. Direct replacement of an NPN requires circuit redesign, including reversed supply connections and inverted control logic. Its NPN complement is PBSS4440D.

Is PBSS5440D qualified for automotive applications?

No - the September 2025 datasheet explicitly states this part is non-automotive qualified. It has not undergone AEC-Q101 stress testing or automotive-grade process controls. For automotive use, Nexperia offers the −Q qualified variant PBSS5440D-Q.

How does the four-collector pin configuration affect PCB layout?

The four collector pins (1, 2, 5, 6) must be routed to a common high-current net - typically a large copper pour - to exploit their parallel current-handling and thermal benefits. Splitting them reduces current capacity and increases localized heating; all four must share identical trace geometry and thermal vias for balanced performance.

PBSS5440D,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
SC-74, SOT-457
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
450mV @ 600mA, 6A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
175 @ 2A, 2V
Power - Max:
1.1 W
Frequency - Transition:
110MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSOP

PBSS5440D,115 FAQ

1.How can I place an order for PBSS5440D,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5440D,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5440D,115 reliable?

The price and inventory of PBSS5440D,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5440D,115 is usually 5 days.

3.What payment methods are accepted for PBSS5440D,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5440D,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5440D,115?

PBSS5440D,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5440D,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5440D,115?

For technical support, including PBSS5440D,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5440D,115 requirements.

6.How does Aetrix verify that PBSS5440D,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5440D,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5440D,115 meets industry standards.

7.What is the process for return or replacement of PBSS5440D,115?

All PBSS5440D,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5440D,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5440D,115 part is unused and in its original packaging.

Return procedure for PBSS5440D,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PBSS5440D,115 Tags

  • PBSS5440D,115
  • PBSS5440D,115 PDF
  • PBSS5440D,115 Datasheet
  • PBSS5440D,115 Specifications
  • PBSS5440D,115 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PBSS5440D,115
  • Buy PBSS5440D,115
  • PBSS5440D,115 Price
  • PBSS5440D,115 Distributor
  • PBSS5440D,115 Supplier
  • PBSS5440D,115 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER