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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5480X-QF

Name: PBSS5480X-QF
Brand: Nexperia USA Inc.
SKU: PBSS5480X-QF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5480X-QF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: PBSS5480X-QF.pdf

Description:: PBSS5480X-Q/SOT89/MPT3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5480X-QF from Nexperia is a PNP low V_CEsat (BISS) transistor in SOT89 package, rated for −80 V V_CEO, −4 A continuous collector current, and 75 mΩ equivalent on-resistance; used as medium-power switching element in DC-DC converters, motor drivers, and strobe flash circuits.

For engineers reviewing the PBSS5480X-QF datasheet, PBSS5480X-QF pinout, PBSS5480X-QF application, or PBSS5480X-QF equivalent, key selection criteria include verified V_CEsat ≤ 340 mV at −4 A/−200 mA drive, h_FE ≥ 80 at high current, thermal resistance R_th(j-a) = 90 K/W with 6 cm² collector pad, and SOT89 mechanical compatibility with PCB heat-sinking requirements.

Technical Context

This PNP BISS transistor uses a bipolar structure optimized for low saturation voltage and high current gain at elevated collector currents, enabling efficient switching in medium-power linear and saturated-mode applications. Its design targets stable h_FE of 150–240 at −2 A and 80–150 at −4 A, with V_BEsat ≤ −1000 mV under full load.

Thermal performance is defined across multiple mounting conditions: R_th(j-a) ranges from 50 K/W (6 cm² copper pad) to 225 K/W (standard footprint), and R_th(j-s) is fixed at 16 K/W, supporting predictable junction temperature estimation in thermally constrained layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−80 V - supports operation in 48 V industrial bus and 60 V automotive subsystems with margin
I_C (DC)	−4 A - enables direct driving of fans, small motors, and LED flash arrays without external amplification
V_CEsat	−220 to −340 mV @ −4 A/−200 mA - reduces conduction loss and self-heating vs. standard PNP transistors
h_FE	80–150 @ −4 A - ensures reliable base drive margin and stable switching in high-current saturation
R_CEsat	75 mΩ max - simplifies power loss calculation in DC-DC synchronous rectifier or switch-mode topologies
f_T	100–125 MHz - supports fast turn-off in PWM-driven applications up to several hundred kHz
C_c	60–90 pF - limits capacitive loading on driver stages and minimizes switching energy loss

Pinout & Package

The PBSS5480X-QF is housed in a SOT89 (SC-62) plastic surface-mount package with an exposed collector pad for enhanced thermal transfer. The package measures 4.6 × 2.6 × 1.6 mm and features tin-plated leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit node; connected to system ground or negative rail in high-side switch configurations
2	Collector	Main power output terminal; soldered to large copper area for thermal management and current handling
3	Base	Control input requiring −200 mA drive for full saturation at −4 A; logic-level compatible with 3.3 V/5 V microcontrollers via resistor network

Key Features

Feature	Design Value
Low V_CEsat architecture	Reduces conduction loss by >40% vs. conventional PNP transistors at 4 A, lowering thermal stress in compact enclosures
High h_FE at high current	Maintains ≥80 gain at −4 A, enabling smaller base drive circuitry and lower gate-driver IC cost
SOT89 thermal pad	Enables 1.4 W power dissipation with 6 cm² copper pad - suitable for fan/motor drivers without heatsinks
BISS process technology	Combines bipolar switching speed with MOS-like low on-resistance, supporting both linear and saturated operation
−150 °C T_j rating	Allows sustained operation in under-hood automotive or industrial environments with ambient up to +105 °C

Applications

Battery Charger Switching Stage

TFT-LCD Inverter Control

Use Scenario: High-efficiency buck-boost switching stage in portable battery chargers delivering up to 4 A charge current.

IC Role / Device Role / Timing Role: PNP power switch controlling current flow into Li-ion cell during constant-current phase.

Use Value: V_CEsat ≤ 340 mV at −4 A cuts conduction loss to <1.4 W, eliminating need for active cooling in handheld form factors.

Use Scenario: Backlight inverter enable/disable control in automotive TFT-LCD displays operating from 12 V supply.

IC Role / Device Role / Timing Role: High-side PNP switch isolating inverter primary winding during standby mode.

Use Value: −80 V V_CEO provides 3× margin over 12 V rail transients; h_FE ≥ 150 ensures clean turn-on with minimal base current.

Digital Camera Strobe Flash

LAN/ADSL Power Switch

Use Scenario: Capacitor discharge control in smartphone camera flash modules requiring precise 1–2 A pulse current.

IC Role / Device Role / Timing Role: Fast-switching PNP transistor gating energy from storage capacitor to xenon/LED array.

Use Value: f_T ≥ 100 MHz and t_f < 100 ns (inferred from V_CEsat curves) support sub-millisecond flash timing accuracy.

Use Scenario: 48 V phantom power switch in Ethernet-powered LAN equipment and ADSL line cards.

IC Role / Device Role / Timing Role: Medium-power PNP switch enabling/disabling PoE power delivery path with reverse-polarity protection.

Use Value: R_CEsat = 75 mΩ limits voltage drop to <300 mV at 4 A, preserving compliance with IEEE 802.3af/at voltage thresholds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LKQ	−30 V V_CEO, −5 A I_C, 45 mΩ R_CEsat; MOSFET-based, no base current required	Lower voltage rating restricts use to ≤24 V systems; superior efficiency but lacks bipolar linearity for analog control	Select when driving ≤24 V loads with ultra-low-loss requirements and digital-only control
PBSS5380X	−60 V V_CEO, same SOT89 package, −3 A I_C, 110 mΩ R_CEsat	Reduced voltage/current capability; higher V_CEsat increases conduction loss by ~50% at 3 A	Select only if 60 V rating and 3 A current suffice and cost sensitivity outweighs thermal performance

Compared with DMT3005LKQ and PBSS5380X, PBSS5480X-QF uniquely balances −80 V robustness, −4 A capability, and 75 mΩ on-resistance in a thermally optimized SOT89 package-making it optimal for 48 V industrial switching and automotive display inverters where bipolar drive simplicity and voltage margin are critical.

Availability

PBSS5480X-QF is available at Aetrix Electronics and suitable for battery chargers, TFT-LCD inverters, digital camera strobes, and PoE power switches requiring stable component supply across automotive, industrial, and consumer production programs.

Supply support for PBSS5480X-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PBSS5480X-QF belongs to Nexperia's BISS (Bipolar Integrated Schottky) transistor product line, engineered specifically for high-efficiency, medium-power switching applications demanding low saturation voltage and high current gain in compact surface-mount packages.

FAQ

What is the maximum allowable junction temperature for PBSS5480X-QF?

The absolute maximum junction temperature (T_j) is 150 °C, as specified in the Limiting Values table. Operation at this limit requires strict thermal design: R_th(j-a) must be ≤90 K/W (achieved with 6 cm² collector pad on FR4), and ambient temperature must remain ≤60 °C to maintain safe margin. Exceeding 150 °C risks permanent parametric shift or bond-wire failure.

Does PBSS5480X-QF require a base resistor, and what value is recommended?

Yes - a base resistor is mandatory to limit IB to ≤−200 mA at V_BB = −5 V. For −4 A collector current, a 15 Ω ±5% resistor delivers −333 mA peak base current, ensuring deep saturation while staying within IBM = −2 A limit. At 3.3 V logic drive, a 10 Ω resistor yields −330 mA, maintaining h_FE-driven saturation per datasheet curves.

Can PBSS5480X-QF be used in linear regulator applications?

No - it is not characterized or qualified for linear regulation. Its Safe Operating Area (SOA) is defined only for pulsed and DC switching modes (tp ≤ 10 ms, δ ≤ 0.1). Continuous linear operation risks secondary breakdown due to localized heating at the emitter-base junction, and no SOA graph or thermal stability data is provided for analog bias conditions.

Is there a lead-free and RoHS-compliant version of PBSS5480X-QF?

Yes - PBSS5480X-QF is manufactured in full compliance with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. All plating is matte tin, and the molding compound meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), with no exemptions claimed for lead, cadmium, or hexavalent chromium.

PBSS5480X-QF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PBSS5480X-QF FAQ

1.How can I place an order for PBSS5480X-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5480X-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5480X-QF reliable?

The price and inventory of PBSS5480X-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5480X-QF is usually 5 days.

3.What payment methods are accepted for PBSS5480X-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5480X-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5480X-QF?

PBSS5480X-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5480X-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5480X-QF?

For technical support, including PBSS5480X-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5480X-QF requirements.

6.How does Aetrix verify that PBSS5480X-QF is sourced from the original manufacturer or authorized distributors?

All PBSS5480X-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5480X-QF meets industry standards.

7.What is the process for return or replacement of PBSS5480X-QF?

All PBSS5480X-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5480X-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5480X-QF part is unused and in its original packaging.

Return procedure for PBSS5480X-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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