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Nexperia USA Inc. PBSS5480XZ
- Part No.:
- PBSS5480XZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-243AA
- Datasheet:
-
PBSS5480XZ.pdf
- Description:
- TRANS PNP 80V 4A SOT-89
- Quantity:
- Payment:
- Shipping:
Inventory:9,088
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Product details
Overview
PBSS5480XZ from Nexperia is a PNP low VCEsat (BISS) transistor in SOT89 package, rated for −80 V VCEO, −4 A IC, and 75 mΩ RCEsat, optimized for medium-power switching in battery-powered and thermally constrained systems such as DC-DC converters and motor drivers.
For engineers reviewing the PBSS5480XZ datasheet, PBSS5480XZ pinout, PBSS5480XZ application, or PBSS5480XZ equivalent, this device is selected for high-current PNP switching where low saturation voltage, thermal robustness on FR4 PCBs, and stable hFE at 2–4 A are critical design requirements.
Technical Context
This BISS (Bipolar Integrated Schottky) transistor integrates a Schottky-clamped emitter-base junction to suppress minority-carrier storage and reduce VCEsat at high collector currents. Its structure enables fast turn-off with minimal tail current, supporting efficient PWM operation up to 100 MHz fT.
The device operates with fixed polarity (PNP), requires base current drive (−200 mA typical for −4 A IC), and delivers stable RCEsat across −55 °C to +100 °C ambient-enabled by low thermal resistance (90 K/W on 6 cm² copper pad) and controlled junction temperature limits (Tj ≤ 150 °C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −80 V: Maximum blocking voltage between collector and emitter with base open; supports 48 V bus and flyback snubber designs. |
| IC (DC) | −4 A: Continuous collector current rating; enables direct drive of small fans, solenoids, and LED strings without external heat sinking. |
| VCEsat @ −4 A | −220 to −340 mV: Ultra-low saturation voltage reduces conduction loss to <1.4 W at full load, minimizing thermal stress on PCB. |
| hFE @ −4 A | 80–150: Sufficient DC current gain to sustain −4 A output with −200 mA base drive, easing MCU GPIO or logic-level driver interface. |
| RCEsat | 75 mΩ max: Equivalent on-resistance directly comparable to MOSFET RDS(on); simplifies loss modeling in power stage calculations. |
| fT | 100–125 MHz: Transition frequency confirms suitability for high-speed switching applications including TFT-LCD inverters and strobe flash timing. |
| Cc | 60–90 pF: Collector capacitance limits high-frequency Miller effect; supports clean edge integrity in <100 ns switching transitions. |
Pinout & Package
Package: SOT89 (SC-62), plastic surface-mount package with exposed collector pad for enhanced thermal dissipation; footprint compatible with standard FR4 PCB layouts (6 cm² recommended copper area).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Current exit node; connected to system ground or negative rail; must be routed with low-inductance path for stable switching. |
| 2 | Collector | Main power output node; soldered to large copper pad for thermal management; carries full load current and handles reverse-biased voltage stress. |
| 3 | Base | Control input; driven with negative current (−200 mA typical); requires series resistor to limit IB and prevent overdrive during fast transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat at high current | −220 mV at −4 A/−200 mA ensures <0.9 W conduction loss, reducing heatsink need in space-constrained battery chargers. |
| High hFE stability | 150 min at −2 A and 200 min at −0.5 A enables single-stage base drive from 3.3 V/5 V logic without Darlington stacking. |
| Schottky-clamped BISS structure | Eliminates minority-carrier storage delay, achieving tf < 50 ns-critical for strobe flash synchronization and inverter dead-time control. |
| Thermal robustness | Rth(j-a) = 90 K/W on 6 cm² copper allows 1.4 W continuous dissipation at 70 °C ambient-validating use in sealed enclosures. |
| JEDEC-qualified SOT89 | Standardized SC-62 outline ensures compatibility with automated placement equipment and reflow profiles per IPC-J-STD-020. |
Applications
| Battery Charger Switching Stage | TFT-LCD Inverter Control |
|---|---|
|
Use Scenario: High-efficiency buck or linear charging circuit for Li-ion packs in portable medical devices and power tools. IC Role / Device Role / Timing Role: PNP main switch controlling current flow into battery cell; operates in linear or PWM mode depending on charge phase. Use Value: Low VCEsat minimizes voltage drop and self-heating during constant-current phase, extending battery runtime and improving thermal safety margin. |
Use Scenario: Backlight inverter driver in industrial panel PCs and handheld test equipment requiring stable AC lamp drive. IC Role / Device Role / Timing Role: High-side PNP switch toggling transformer primary current at 50–200 kHz; synchronized with complementary NPN stage. Use Value: Fast switching (fT ≥ 100 MHz) and low Cc ensure precise duty-cycle control and reduced EMI in high-voltage lamp circuits. |
| Digital Camera Strobe Flash | LAN/ADSL Power Switch |
|
Use Scenario: Compact flash capacitor discharge circuit in smartphone front cameras and action cams requiring sub-10 ms pulse width. IC Role / Device Role / Timing Role: High-current PNP switch discharging 300 V–400 V capacitor through xenon tube; triggered by microcontroller GPIO. Use Value: −10 A ICM peak rating and −340 mV VCEsat enable full energy transfer with minimal voltage sag, maximizing light intensity per flash. |
Use Scenario: 48 V phantom power switch in PoE-powered Ethernet switches and DSLAM line cards. IC Role / Device Role / Timing Role: Medium-power PNP switch enabling/disabling DC power delivery to remote PHY or transceiver modules. Use Value: −80 V VCEO provides 2× safety margin over 48 V PoE standards, while low RCEsat prevents excessive insertion loss in power path. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS5480MUTBG | Same SOT89 package, −80 V/−4 A rating, but higher VCEsat (−400 mV @ −4 A) and lower hFE (60 min). | Less suitable for thermally tight battery charger designs due to +180 mV higher conduction loss. | Select if cost sensitivity outweighs thermal performance and base drive margin is available. |
| Diodes Incorporated DXT5480Z-13 | Identical electrical specs and pinout, but qualified to AEC-Q101 and offered with extended temperature range (−55 °C to +175 °C). | Required for automotive body control modules where junction temperature exceeds 150 °C under fault conditions. | Select for automotive-grade reliability; otherwise identical functional replacement. |
Compared with PBSS5480XZ, NSS5480MUTBG trades thermal efficiency for cost, while DXT5480Z-13 adds automotive qualification without altering core switching behavior-making PBSS5480XZ optimal for industrial and consumer applications balancing performance, footprint, and supply chain maturity.
Availability
PBSS5480XZ is available at Aetrix Electronics and suitable for battery chargers, TFT-LCD inverters, and PoE power switches requiring stable component supply, JEDEC-standard packaging, and consistent low-VCEsat performance across production lots.
Supply support for PBSS5480XZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete semiconductors, spun off from NXP in 2017, specializing in high-volume, high-reliability components for automotive, industrial, and consumer markets.
PBSS5480XZ belongs to Nexperia's BISS transistor family, engineered specifically for high-current, low-loss PNP switching in thermally constrained power management and peripheral driver applications.
FAQ
What is the maximum safe operating junction temperature for PBSS5480XZ?
The absolute maximum junction temperature (Tj) is 150 °C, as defined in the limiting values table. Operation above this threshold risks permanent degradation of hFE and increased leakage. Derating curves confirm 1.4 W total power dissipation is permissible at 25 °C ambient with a 6 cm² copper pad, decreasing linearly to 0.55 W at 100 °C ambient.
Can PBSS5480XZ replace an N-channel MOSFET in high-side switching applications?
No-it is a PNP bipolar transistor and cannot function as a direct high-side MOSFET replacement due to fundamental differences in gate vs. base drive, conduction mechanism, and lack of inherent body diode. However, it serves as a proven high-side switch when paired with appropriate base biasing and current-limiting resistors, especially where low VCEsat and predictable hFE are prioritized over zero-gate-drive operation.
Is PBSS5480XZ pin-compatible with its NPN complement PBSS4480X?
Yes-both share identical SOT89 (SC-62) package and pinout: Pin 1 = emitter, Pin 2 = collector, Pin 3 = base. This allows mirrored PCB layout for complementary push-pull or H-bridge configurations, though polarity reversal must be accounted for in schematic capture and firmware control logic.
Does PBSS5480XZ require a base resistor, and how is its value calculated?
Yes-a series base resistor is mandatory to limit peak base current (IB ≤ −2 A absolute max). For −4 A collector current and hFE = 100 (typical), target IB = −40 mA. With a −5 V drive source and VBEsat ≈ −0.95 V, RB = (−5 V + 0.95 V)/40 mA ≈ 101 Ω; a standard 100 Ω ±5% resistor satisfies this requirement while allowing margin for hFE variation.
PBSS5480XZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 4 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 380mV @ 500mA, 5A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 500mA, 2V
- Power - Max:
- -
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-89
PBSS5480XZ FAQ
1.How can I place an order for PBSS5480XZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS5480XZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS5480XZ reliable?
The price and inventory of PBSS5480XZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5480XZ is usually 5 days.
3.What payment methods are accepted for PBSS5480XZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5480XZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS5480XZ?
PBSS5480XZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS5480XZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS5480XZ?
For technical support, including PBSS5480XZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5480XZ requirements.
6.How does Aetrix verify that PBSS5480XZ is sourced from the original manufacturer or authorized distributors?
All PBSS5480XZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5480XZ meets industry standards.
7.What is the process for return or replacement of PBSS5480XZ?
All PBSS5480XZ units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5480XZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS5480XZ part is unused and in its original packaging.
Return procedure for PBSS5480XZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS5480XZ Tags
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Diodes Incorporated
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