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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5520X,135

Name: PBSS5520X,135
Brand: Nexperia USA Inc.
SKU: PBSS5520X,135
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5520X,135

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-243AA

Datasheet:: PBSS5520X,135.pdf

Description:: TRANS PNP 20V 5A SOT-89

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5520X,135 from Nexperia is a PNP low V_CEsat (BISS) transistor in SOT89 package, rated for −20 V V_CEO, −5 A DC collector current, and 34 mΩ typical R_CEsat at I_C = −5 A / I_B = −500 mA. It serves as a medium-power switching element in battery-powered peripheral drivers and supply-line switching circuits.

For engineers reviewing the PBSS5520X,135 datasheet, PBSS5520X,135 pinout, PBSS5520X,135 application, or PBSS5520X,135 equivalent, key selection criteria include verified low saturation voltage under high-current drive, thermal performance on FR4 PCB with collector pad, and compatibility with PNP-switching topologies requiring <−170 mV V_CEsat at full load.

Technical Context

This BISS (Bipolar Integrated Schottky) transistor integrates a Schottky-clamped PNP structure to suppress minority-carrier storage delay and reduce V_CEsat without compromising h_FE. Its design targets fast turn-off and minimal switching loss in DC-DC and motor-drive applications.

It operates with DC collector current up to −5 A and peak current up to −10 A under pulsed conditions (t_p ≤ 1 ms). Thermal resistance from junction to soldering point is 16 K/W, enabling reliable operation when mounted on standard SOT89 footprint with ≥1 cm² copper pad for the collector terminal.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V - Maximum safe collector-emitter blocking voltage with base open; defines usable voltage headroom in negative-rail switching.
I_C (DC)	−5 A - Continuous collector current rating at T_amb ≤ 25 °C with standard PCB layout; supports fan/motor drivers without forced cooling.
V_CEsat @ I_C=−5 A	−170 to −270 mV - Verified saturation voltage range at full load and I_B=−500 mA; enables <0.9 W conduction loss at 5 A.
R_CEsat	34–54 mΩ - Equivalent on-resistance derived from V_CEsat/I_C; critical for thermal modeling and efficiency calculation in power switches.
h_FE @ I_C=−5 A	150–260 - DC current gain at full-rated current; ensures sufficient base drive margin for robust saturation in high-current switching.
f_T	80–100 MHz - Transition frequency at I_C=−100 mA; confirms suitability for medium-speed switching (≤500 kHz PWM).

Pinout & Package

SOT89 (SC-62) plastic surface-mounted package with exposed collector pad for enhanced thermal dissipation; 3-lead configuration optimized for medium-power switching on FR4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit node for PNP operation; connects to system ground or negative rail return path.
2	Collector	Main power output node; electrically and thermally tied to large copper pad for heat transfer and current handling.
3	Base	Control input for bipolar switching; requires −500 mA drive to fully saturate at −5 A collector current.

Key Features

Feature	Design Value
Low V_CEsat architecture	BISS structure reduces saturation voltage by >30% vs. standard PNP transistors at I_C ≥ 2 A, lowering conduction losses.
High h_FE at high current	h_FE ≥ 150 maintained at −5 A, minimizing required base drive current and simplifying driver circuit design.
Thermally optimized package	SOT89 collector pad enables 1.4 W power dissipation with 6 cm² copper area-supports compact, fanless designs.
Robust transient capability	Peak collector current rating of −10 A (t_p ≤ 1 ms) allows handling of motor startup surges and capacitor inrush.

Applications

Fan/Motor Driver

Strobe Flash Unit

Use Scenario: Driving 12 V DC cooling fans or small brushed motors in portable computing and industrial controllers.

IC Role / Device Role / Timing Role: Medium-power PNP switch controlling current flow from negative rail to motor winding.

Use Value: Low V_CEsat (<−230 mV at 4 A) limits power loss to <0.92 W, reducing heatsink requirements and board temperature rise.

Use Scenario: High-current pulse switch for xenon flash charging/discharging in digital still cameras and smartphones.

IC Role / Device Role / Timing Role: Fast-turn-off PNP switch enabling precise flash duration control and rapid recharge cycles.

Use Value: 100 MHz f_T and low storage time support sub-millisecond switching, improving flash timing accuracy and energy efficiency.

LAN/ADSL Power Switch

Battery Charger Load Switch

Use Scenario: Supply line switching for PoE-powered LAN devices and ADSL line interface modules.

IC Role / Device Role / Timing Role: Negative-rail hot-swap switch isolating downstream circuitry during fault or insertion events.

Use Value: −20 V V_CEO and −10 A I_CM ensure safe operation across Ethernet voltage transients and surge conditions.

Use Scenario: Reverse-polarity and overcurrent protection switch in multi-cell Li-ion battery charger circuits.

IC Role / Device Role / Timing Role: PNP-based load disconnect switch placed between battery pack and charging IC.

Use Value: 34 mΩ R_CEsat minimizes voltage drop during charging, preserving regulation accuracy and charge termination precision.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PBSS5320X,115	Lower I_C rating (−3 A), higher V_CEsat (−220 mV typ. @ −3 A), same SOT89 package.	Optimized for <3 A loads; less suitable for 5 A motor/fan drivers due to thermal derating.	Select when board space and cost constrain use of higher-current devices and load current remains ≤3 A.
DMT3005LKQ-7	PNP MOSFET alternative with −30 V V_DS, −5 A I_D, but gate-driven (not base-driven); R_DS(on) = 45 mΩ @ V_GS = −10 V.	Requires gate driver circuitry; lacks inherent current gain; better for high-frequency PWM but needs level-shifting.	Prefer for designs already using MOSFET gate drivers or requiring zero gate current; avoid if base-driven simplicity is critical.

Compared with PBSS5320X,115, PBSS5520X,135 delivers 67% higher continuous current and lower conduction loss at full load; versus DMT3005LKQ-7, it eliminates gate drive complexity but trades off switching speed and gate control flexibility.

Availability

PBSS5520X,135 is available at Aetrix Electronics and suitable for medium-power peripheral drivers, strobe flash units, LAN/ADSL power switches, and battery charger load switching requiring stable component supply and consistent SOT89 thermal performance.

Supply support for PBSS5520X,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

PBSS5520X,135 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, medium-power PNP switching where low V_CEsat and high h_FE at elevated current are essential.

FAQ

What is the maximum allowable junction temperature for PBSS5520X,135?

The absolute maximum junction temperature (T_j) is +150 °C per the datasheet Limiting Values table. Operation above this threshold risks permanent degradation of the BISS structure and accelerated parameter drift. Derating curves in Figure 2 confirm 1.4 W dissipation limit at 25 °C ambient with 6 cm² collector pad.

Can PBSS5520X,135 be used in place of an NPN transistor in a high-side switch configuration?

No-it is a PNP device intended for low-side or negative-rail switching. In high-side configurations, it would require active base pull-up to a voltage more positive than emitter, which contradicts its −20 V V_CEO rating. For high-side switching, use complementary NPN BISS devices like PBSS4520X or dedicated high-side drivers.

Is the SOT89 package lead-free and RoHS compliant?

Yes-Nexperia confirms PBSS5520X,135 meets RoHS Directive 2011/65/EU and is manufactured with lead-free terminations. The package uses matte tin plating on copper leads, and the marking code "*1K" indicates production in Malaysia or China under Nexperia's qualified processes.

What is the recommended base resistor value for driving PBSS5520X,135 at −5 A collector current?

To achieve I_B = −500 mA (I_C/I_B = 10), and assuming V_BEsat ≈ −0.96 V at −5 A, a 5 V logic signal requires R_B = (5 V − 0.96 V) / 0.5 A ≈ 8.1 Ω. A standard 8.2 Ω, 1 W resistor is recommended to handle peak base power and ensure hard saturation.

PBSS5520X,135 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-243AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 20 V

Vce Saturation (Max) @ Ib, Ic:: 270mV @ 500mA, 5A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 2A, 2V

Power - Max:: 1.6 W

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-89

PBSS5520X,135 FAQ

1.How can I place an order for PBSS5520X,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5520X,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5520X,135 reliable?

The price and inventory of PBSS5520X,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5520X,135 is usually 5 days.

3.What payment methods are accepted for PBSS5520X,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5520X,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5520X,135?

PBSS5520X,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5520X,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5520X,135?

For technical support, including PBSS5520X,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5520X,135 requirements.

6.How does Aetrix verify that PBSS5520X,135 is sourced from the original manufacturer or authorized distributors?

All PBSS5520X,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5520X,135 meets industry standards.

7.What is the process for return or replacement of PBSS5520X,135?

All PBSS5520X,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5520X,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5520X,135 part is unused and in its original packaging.

Return procedure for PBSS5520X,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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