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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5520X-QF

Name: PBSS5520X-QF
Brand: Nexperia USA Inc.
SKU: PBSS5520X-QF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5520X-QF

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: -

Datasheet:: PBSS5520X-QF.pdf

Description:: PBSS5520X-Q/SOT89/MPT3

Quantity:: RFQ Add To RFQ list

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Inventory:9,370

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Product details

Overview

PBSS5520X-QF from Nexperia is a PNP low V_CEsat (BISS) transistor in SOT89 package, rated for −20 V V_CEO, −5 A I_C, and 34 mΩ R_CEsat at I_C = −5 A / I_B = −500 mA. It serves as a medium-power switching element in battery-powered peripheral drivers and DC-DC conversion stages where thermal efficiency and compact footprint are critical.

For engineers reviewing the PBSS5520X-QF datasheet, PBSS5520X-QF pinout, PBSS5520X-QF application, or PBSS5520X-QF equivalent, key selection criteria include verified low saturation voltage under high-current drive, thermal resistance performance on standard FR4 PCBs, collector pad layout compatibility for heat dissipation, and validated PNP complement pairing with PBSS4520X.

Technical Context

This BISS (Bipolar Integrated Schottky) transistor integrates a Schottky-clamped emitter-base structure to suppress minority-carrier storage delay and reduce V_CEsat without compromising switching speed. Its high h_FE (min 150 at −5 A) enables efficient base drive scaling in high-current switching applications.

The device operates with a maximum junction temperature of 150 °C and exhibits R_th(j-a) = 90 K/W when mounted on FR4 with a 6 cm² collector pad - a design-critical thermal metric for sustained 5 A conduction in space-constrained industrial modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−20 V: Maximum safe collector-emitter blocking voltage in open-base configuration.
I_C (DC)	−5 A: Continuous collector current rating defining steady-state power switch capability.
R_CEsat	34 mΩ (typ): Equivalent on-resistance at full load, directly determining conduction loss (P_cond ≈ I² × R).
V_CEsat	−170 mV (typ) at −5 A / −500 mA: Low saturation voltage enabling <0.9 W conduction loss at rated current.
h_FE	150–260 (at −5 A): High DC current gain ensures minimal base drive current requirement for full turn-on.
f_T	80 MHz (typ): Transition frequency confirming suitability for medium-speed switching (≤500 kHz PWM).
C_c	130 pF (typ): Collector capacitance affecting turn-off energy and EMI behavior in hard-switched topologies.

Pinout & Package

Package: SOT89 (SC-62), plastic surface-mounted package with exposed collector pad for enhanced thermal transfer. Dimensions per JEDEC TO-243 outline: 4.6 mm × 2.6 mm × 1.6 mm; collector pad occupies ~60% of bottom surface area.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Current exit node; connected to system ground or low-side return path in high-side switch configurations.
2	Collector	Main power output terminal; soldered to large copper pad for thermal management and current routing.
3	Base	Control input; requires −500 mA drive for full saturation at −5 A collector current.

Key Features

Feature	Design Value
Low V_CEsat architecture	34 mΩ R_CEsat reduces conduction losses by >40% vs. standard PNP transistors at 5 A.
SOT89 thermal pad	Exposed collector pad enables 1.4 W power dissipation on 6 cm² FR4 - 2.5× higher than standard footprint.
High h_FE at high current	Min 150 h_FE at −5 A allows microcontroller GPIO direct drive without external buffer stage.
BISS process integration	Schottky clamp minimizes storage time, supporting clean turn-off in 100–500 kHz DC-DC converters.
Automotive-qualified reliability	AEC-Q101 stress-tested; suitable for fan/motor drivers in automotive body electronics.

Applications

Fan & Motor Drivers

Strobe Flash Units

Use Scenario: Driving 12 V, 3 A cooling fans in industrial PLC enclosures with ambient temperatures up to 85 °C.

IC Role / Device Role / Timing Role: High-current PNP switch controlling motor supply rail; operates in linear or saturated mode depending on PWM duty cycle.

Use Value: 170 mV V_CEsat limits self-heating to <0.5 W at full load, eliminating need for heatsink in sealed chassis.

Use Scenario: Charging and discharging xenon flash capacitors in mobile phone camera modules.

IC Role / Device Role / Timing Role: Fast-turn-on PNP switch enabling sub-10 μs flash trigger response with precise energy control.

Use Value: 80 MHz f_T and low storage time ensure accurate pulse width control during high-repetition strobe sequences.

LAN/ADSL Power Switching

Battery Charger Load Switch

Use Scenario: Enabling/disabling 48 V phantom power to Ethernet PHY interfaces in PoE-powered switches.

IC Role / Device Role / Timing Role: Medium-voltage PNP load switch placed between DC-DC converter output and PHY supply rail.

Use Value: −20 V V_CEO provides 2× safety margin over 48 V PoE systems; R_CEsat <54 mΩ prevents >250 mW dropout at 2 A load.

Use Scenario: Isolating Li-ion battery pack from charging circuitry during fault conditions in portable medical devices.

IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch activated by charger IC enable signal.

Use Value: −5 V V_EBO rating supports direct connection to battery monitor ICs; low leakage (<100 nA) preserves standby battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PBSS5320X	Lower I_C rating (−3 A), higher R_CEsat (85 mΩ), same SOT89 package.	Optimized for ≤3 A loads; insufficient for 5 A motor drivers requiring sustained conduction.	Select only when thermal budget allows higher dropout or peak current is <3 A.
ZXTN25050DFH	NPN counterpart with +50 V V_CEO, +5 A I_C, but requires level-shifting drive circuitry.	Used in low-side switching topologies; incompatible with high-side PNP configurations without redesign.	Choose only if board layout permits NPN placement and gate driver supports active-low logic.

Compared with PBSS5320X and ZXTN25050DFH, PBSS5520X-QF uniquely delivers −5 A continuous current with <170 mV V_CEsat in a single-SOT89 footprint - enabling compact, thermally efficient high-side switching without drive complexity or derating.

Availability

PBSS5520X-QF is available at Aetrix Electronics and suitable for fan & motor drivers, strobe flash units, LAN/ADSL power switching, and battery charger load switching requiring stable component supply across industrial, computing, and consumer product lifecycles.

Supply support for PBSS5520X-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.

PBSS5520X-QF belongs to Nexperia's BISS transistor family, engineered specifically for high-efficiency, medium-power switching in space-constrained applications where low V_CEsat and thermal robustness are critical.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum DC base current is −1 A per datasheet Limiting Values table. However, for reliable long-term operation at −5 A collector current, the recommended base drive is −500 mA - matching the test condition for specified R_CEsat and V_CEsat. Exceeding −500 mA does not improve saturation but increases base drive power loss and thermal stress on the bond wires.

Can PBSS5520X-QF be used in a synchronous rectifier configuration?

No - PBSS5520X-QF is a unidirectional PNP bipolar transistor with no intrinsic body diode or reverse conduction capability. Its structure lacks the parasitic FET channel required for synchronous rectification. It functions only as a controlled current sink in forward-biased configurations and cannot replace MOSFETs in flyback or LLC secondary-side rectification.

How does the SOT89 collector pad affect PCB layout requirements?

The exposed collector pad must be connected to a minimum 6 cm² copper area on the top layer for rated 1.4 W power dissipation. Layout requires thermal vias (≥6× 0.3 mm diameter) to inner or bottom ground planes, and isolation from adjacent signals due to its direct connection to the high-current output node. Standard footprint mounting yields only 0.55 W rating - insufficient for 5 A operation.

Is there a lead-free and RoHS-compliant version of this part?

Yes - PBSS5520X-QF is manufactured in compliance with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "QF" suffix denotes Nexperia's qualified automotive-grade variant with lead-free matte tin plating (Sn 100%), halogen-free molding compound, and full traceability per IATF 16949 processes.

PBSS5520X-QF Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: -

Current - Collector (Ic) (Max):: -

Voltage - Collector Emitter Breakdown (Max):: -

Vce Saturation (Max) @ Ib, Ic:: -

Current - Collector Cutoff (Max):: -

DC Current Gain (hFE) (Min) @ Ic, Vce:: -

Power - Max:: -

Frequency - Transition:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PBSS5520X-QF FAQ

1.How can I place an order for PBSS5520X-QF through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5520X-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5520X-QF reliable?

The price and inventory of PBSS5520X-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5520X-QF is usually 5 days.

3.What payment methods are accepted for PBSS5520X-QF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5520X-QF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5520X-QF?

PBSS5520X-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5520X-QF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5520X-QF?

For technical support, including PBSS5520X-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5520X-QF requirements.

6.How does Aetrix verify that PBSS5520X-QF is sourced from the original manufacturer or authorized distributors?

All PBSS5520X-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5520X-QF meets industry standards.

7.What is the process for return or replacement of PBSS5520X-QF?

All PBSS5520X-QF units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5520X-QF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5520X-QF part is unused and in its original packaging.

Return procedure for PBSS5520X-QF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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