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Nexperia USA Inc. PBSS5540X,135

Part No.:
PBSS5540X,135
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-243AA
Datasheet:
AetrixPBSS5540X,135.pdf
Description:
TRANS PNP 40V 4A SOT-89
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:12,448

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Product details

Overview

PBSS5540X,135 from Nexperia is a PNP low VCE(sat) transistor in SOT89 package, designed for medium-power switching applications requiring high current capability (−4 A continuous, −10 A pulsed), low saturation voltage (−375 mV at −4 A), and robust thermal performance on FR4 PCBs. It serves as a high-efficiency load switch in battery management, DC/DC converters, and relay drivers.

For engineers reviewing the PBSS5540X,135 datasheet, PBSS5540X,135 pinout, PBSS5540X,135 application, or PBSS5540X,135 equivalent, key selection criteria include verified VCE(sat) ≤ −375 mV at −4 A/−200 mA drive, RCE(sat) = 45–75 mΩ, Tj max = 150 °C, SOT89 thermal resistance down to 80 K/W (ceramic board), and confirmed PNP polarity with emitter-collector-base pinning.

Technical Context

This PNP bipolar junction transistor operates with open-base collector-emitter breakdown voltage of −40 V and emitter-base breakdown of −6 V, supporting reliable operation in supply-line switching where reverse-polarity protection and low-loss conduction are critical. Its hFE ranges from 50 (at −5 A) to 120 (at −0.5 A), enabling stable DC gain across load currents.

The device uses pulsed test conditions (tp ≤ 300 µs, duty δ ≤ 0.02) for saturation parameter validation, ensuring accurate low-VCE(sat) behavior under real-world switching transients. Thermal derating curves confirm usable power dissipation up to 1.6 W on ceramic PCBs and 1.4 W on 6 cm² FR4 collector pads.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −40 V - Maximum safe collector-emitter voltage with base open; defines upper limit for supply rail switching in 24 V systems.
IC −4 A - Continuous collector current rating; supports sustained 5 W load switching at 1.25 V drop (VCE(sat) × IC).
VCE(sat) −375 mV - Measured at −4 A / −200 mA drive; enables <0.15 W conduction loss, reducing heatsink requirements.
RCE(sat) 45–75 mΩ - On-resistance range at −5 A / −500 mA; directly determines I²R losses in high-current pulse applications.
hFE 50–120 - DC current gain spanning −0.5 A to −5 A; ensures sufficient base drive margin for reliable saturation across operating range.
Tj max 150 °C - Maximum junction temperature; allows operation in industrial ambient (−65 to +150 °C) without thermal shutdown.
Rth(j-a) 80 K/W - Junction-to-ambient thermal resistance on 7 cm² ceramic PCB; enables 1.6 W continuous dissipation with <130 °C rise.

Pinout & Package

Package: SOT89 (SC-62/TO-243), surface-mount plastic package with 1.5 mm lead pitch, 4.5 mm × 2.5 mm × 1.5 mm body, and integrated collector pad for thermal enhancement.

Pin/Terminal Circuit Role Design Meaning
1 Emitter (E) Current exit terminal for PNP operation; connected to higher potential rail in high-side switch configurations.
2 Collector (C) Main current sink terminal; thermally coupled to PCB mounting pad for efficient heat transfer in power switching.
3 Base (B) Control input requiring negative current (−200 mA typical) to saturate; logic-level compatible with microcontroller GPIO via resistor.

Key Features

Feature Design Value
Low VCE(sat) −375 mV at −4 A ensures <0.15 W conduction loss, minimizing thermal stress in compact layouts.
High peak current −10 A single-pulse rating supports motor startup surges and strobe flash discharge without failure.
Thermal robustness Rth(j-sp) = 16 K/W to solder point enables rapid heat extraction into PCB copper, improving reliability.
Wide temperature range −65 °C to +150 °C operation supports deployment in automotive under-hood and industrial control environments.
PNP complement pairing Direct NPN counterpart PBSS4540X enables complementary push-pull or H-bridge designs with matched specs.

Applications

Battery Management Systems DC/DC Converter Primary Switch

Use Scenario: Reverse-polarity protection and charge/discharge path control in 12–24 V Li-ion packs.

IC Role / Device Role / Timing Role: High-side PNP switch controlling current flow between battery terminals and system load.

Use Value: Low −375 mV VCE(sat) minimizes voltage drop during charging, preserving state-of-charge accuracy and reducing self-heating.

Use Scenario: Synchronous rectification or primary-side switching in non-isolated buck converters.

IC Role / Device Role / Timing Role: Medium-power switching element handling up to −4 A continuous current at 100–500 kHz.

Use Value: 45–75 mΩ RCE(sat) reduces conduction losses by >30% vs. standard PNP transistors, improving efficiency above 85%.

Strobe Flash Driver Relay & Buzzer Interface

Use Scenario: High-current pulse delivery to xenon flash tubes or LED arrays requiring 5–10 A peaks.

IC Role / Device Role / Timing Role: Fast-saturating PNP switch triggered by microcontroller to discharge capacitor bank.

Use Value: −10 A pulsed rating and 300 µs pulse capability enable full-energy flash discharge without thermal runaway.

Use Scenario: Driving 12 V/24 V electromagnetic relays or audible buzzers in PLC I/O modules.

IC Role / Device Role / Timing Role: Load switch isolating control logic from inductive coil back-EMF.

Use Value: −40 V VCEO withstands >2× supply voltage flyback spikes, eliminating need for external clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCE(sat) transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS55401MUTBG VCE(sat) = −400 mV at −4 A; slightly higher saturation voltage; SOT-89 package identical. Same supply-line switching use cases but requires ~8% higher base drive for equivalent saturation. Select when ON Semi supply chain alignment is required; verify base resistor recalibration for VCE(sat) margin.
Diodes Incorporated DXT55510Q-13 VCE(sat) = −350 mV at −4 A; lower saturation voltage; same SOT-89 footprint and pinout. Better conduction efficiency in thermally constrained designs; hFE min = 40 (vs. 50) may require larger base current. Prefer for ultra-low-loss DC/DC converter outputs where <25 mV VCE(sat) reduction justifies tighter hFE tolerance.

Compared with PBSS5540X,135, NSS55401MUTBG trades 25 mV higher VCE(sat) for broader second-source availability, while DXT55510Q-13 delivers superior conduction loss but demands stricter base drive design due to lower guaranteed hFE.

Availability

PBSS5540X,135 is available at Aetrix Electronics and suitable for battery management systems, DC/DC converter designs, and industrial relay driver circuits requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PBSS5540X,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade qualification.

PBSS5540X,135 belongs to Nexperia's "Low VCE(sat) Transistor" product line, engineered specifically for energy-efficient power switching in space-constrained consumer, industrial, and computing applications.

FAQ

What is the maximum continuous collector current for PBSS5540X,135?

The maximum continuous collector current (IC) is −4 A at Tamb ≤ 25 °C with appropriate PCB copper area. Derating applies above 25 °C per Figure 1: at 70 °C ambient, usable IC drops to approximately −2.8 A on a standard FR4 board with 6 cm² collector pad.

Does PBSS5540X,135 require a heatsink in typical applications?

No dedicated heatsink is required when mounted on FR4 PCBs with ≥1 cm² copper pad on the collector lead; Rth(j-a) is 125 K/W (1 cm²) or 90 K/W (6 cm²), enabling 1.4 W dissipation at ≤75 °C junction rise. Ceramic boards further reduce thermal resistance to 80 K/W.

How does PBSS5540X,135 compare to its NPN counterpart PBSS4540X?

PBSS4540X is the direct NPN complement: same SOT89 package, −40 V VCEO, −4 A IC, and matching −375 mV VCE(sat) at rated current. Both share identical thermal characteristics and pinout symmetry (emitter/base/collector reversed), enabling balanced complementary designs.

Is PBSS5540X,135 qualified for automotive applications?

No. Per Revision History Table 8, PBSS5540X v.5 explicitly states "Product(s) changed to non-automotive qualification." Automotive alternatives must be selected from Nexperia's −Q qualified portfolio (e.g., PBSS5540X-Q), which undergo AEC-Q101 testing and PPAP documentation.

PBSS5540X,135 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-243AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
375mV @ 500mA, 5A
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 2A, 2V
Power - Max:
1.6 W
Frequency - Transition:
60MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-89

PBSS5540X,135 FAQ

1.How can I place an order for PBSS5540X,135 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5540X,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5540X,135 reliable?

The price and inventory of PBSS5540X,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5540X,135 is usually 5 days.

3.What payment methods are accepted for PBSS5540X,135?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5540X,135 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5540X,135?

PBSS5540X,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5540X,135 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5540X,135?

For technical support, including PBSS5540X,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5540X,135 requirements.

6.How does Aetrix verify that PBSS5540X,135 is sourced from the original manufacturer or authorized distributors?

All PBSS5540X,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5540X,135 meets industry standards.

7.What is the process for return or replacement of PBSS5540X,135?

All PBSS5540X,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5540X,135, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5540X,135 part is unused and in its original packaging.

Return procedure for PBSS5540X,135:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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