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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5540Z,115

Name: PBSS5540Z,115
Brand: Nexperia USA Inc.
SKU: PBSS5540Z,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5540Z,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: PBSS5540Z,115.pdf

Description:: TRANS PNP 40V 5A SOT-223

Quantity:: RFQ Add To RFQ list

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Inventory:14,459

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Product details

Overview

PBSS5540Z from Nexperia is a 40 V, −5 A PNP low V_CEsat transistor in SOT223 (SC-73) package, designed for high-current switching with R_CEsat as low as 55 mΩ at −2 A/−200 mA drive. It serves as a robust power switch in battery management, DC/DC converters, and MOSFET driver stages where thermal efficiency and saturation voltage are critical.

For engineers reviewing the PBSS5540Z datasheet, PBSS5540Z pinout, PBSS5540Z application, or PBSS5540Z equivalent, key selection criteria include verified V_CEsat performance under pulsed conditions, thermal resistance on standard FR4 PCBs, dual-collector SOT223 layout compatibility, and validated PNP complement pairing with PBSS4540Z.

Technical Context

This PNP bipolar transistor operates with open-base V_CEO = −40 V and supports peak collector current up to −10 A in single-pulse mode. Its low-saturation architecture delivers V_CEsat ≤ −250 mV at −5 A/−500 mA drive and maintains h_FE = 50–150 across −500 mA to −5 A DC current range.

Thermal design is enabled by dual-collector thermal path: R_th(j-a) = 62 K/W with 6 cm² copper pad, and device reliability is enhanced by junction temperature rating of 150 °C and storage range from −65 °C to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−40 V - Maximum safe collector-emitter voltage with base open; defines off-state blocking capability in high-side switch configurations.
I_C	−5 A - Continuous DC collector current rating; supports sustained load switching in motor drivers and power rails.
R_CEsat	55 mΩ (typ) - Equivalent on-resistance at −2 A/−200 mA; enables <110 mW conduction loss at rated current.
h_FE	50–150 - DC current gain at −5 A; ensures stable base drive sizing for predictable saturation across production lots.
f_T	60–120 MHz - Transition frequency at −10 V V_CE, −100 mA I_C; supports fast switching in strobe flash and PWM control circuits.
P_tot	2 W - Max power dissipation with 6 cm² copper pad; sets practical thermal limit for continuous operation in compact layouts.

Pinout & Package

SOT223 (SC-73) surface-mount package with 4 leads, 2.3 mm pitch, and integrated heatsink pad; dimensions 6.5 × 3.5 × 1.65 mm; leadframe exposed on underside for thermal conduction to PCB.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input requiring −200 mA typical drive for full saturation at −2 A; polarity-sensitive for PNP biasing.
2	Collector	Main high-current output terminal; electrically and thermally connected to leadframe pad for heat transfer.
3	Emiter	Common reference node tied to system ground or positive rail depending on high-side/low-side topology.
4	Collector	Duplicate collector terminal for enhanced current handling and lower thermal resistance via parallel routing.

Key Features

Feature	Design Value
Low V_CEsat	V_CEsat ≤ −250 mV at −5 A/−500 mA ensures <1.25 W conduction loss, reducing thermal stress in battery-powered equipment.
High current capability	−5 A continuous / −10 A pulsed rating supports motor startup surges and flash capacitor discharge without derating.
Dual-collector thermal path	Two collector pins and exposed pad enable 62 K/W junction-to-ambient resistance on 6 cm² FR4 copper, improving long-term reliability.
PNP/NPN complementary pair	Validated match with PBSS4540Z (NPN) allows symmetrical push-pull or H-bridge designs with matched V_CEsat and gain profiles.

Applications

Battery Management Systems

DC/DC Converter Switching

Use Scenario: High-side main battery disconnect and charge path control in portable medical devices and power tools.

IC Role / Device Role / Timing Role: PNP power switch controlling 12–24 V battery feed to downstream regulators and protection ICs.

Use Value: Low R_CEsat minimizes voltage drop and self-heating during continuous 3–5 A load, extending runtime and enabling smaller heatsinks.

Use Scenario: Synchronous rectifier or pre-regulator switch in non-isolated buck converters for industrial sensors.

IC Role / Device Role / Timing Role: Main switching element in low-side or high-side configuration with gate driver interface.

Use Value: 60–120 MHz f_T supports >500 kHz switching frequencies while maintaining low conduction loss and thermal stability.

MOSFET Driver Stage

Strobe Flash Unit

Use Scenario: Level-shifting and current-boosting stage driving high-capacitance N-channel MOSFET gates in motor control modules.

IC Role / Device Role / Timing Role: PNP emitter-follower buffer delivering −500 mA peak base/gate current with minimal propagation delay.

Use Value: Verified h_FE ≥ 50 at −5 A ensures consistent turn-on speed and reduces gate drive component count.

Use Scenario: High-current pulse switch discharging 300–500 V capacitor into xenon flash tube in DSLR and action cameras.

IC Role / Device Role / Timing Role: Primary discharge switch operating in single-pulse mode with <1 ms duration.

Use Value: −10 A peak rating and 150 °C T_j rating allow reliable 10–20 A transient pulses without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTN25050DFH	Higher V_CEO (−60 V), lower I_C (−3 A), SOT89 package; R_CEsat = 85 mΩ at −2 A.	Limited to ≤3 A continuous loads; unsuitable for 5 A motor drivers but fits space-constrained 12 V systems.	Select when higher breakdown voltage is required and thermal pad area is limited.
MMBT4403	Standard PNP, V_CEO = −40 V, I_C = −600 mA, R_CEsat ≈ 300 mΩ; SOT23 package.	Not suitable for >1 A loads; lacks thermal pad and dual-collector structure for power handling.	Only for signal-level switching or low-power bias networks-not a functional replacement.

Compared with ZXTN25050DFH and MMBT4403, PBSS5540Z uniquely combines −5 A continuous rating, 55 mΩ R_CEsat, and SOT223 thermal performance-making it the only option among the three qualified for high-duty-cycle battery-powered power switching.

Availability

PBSS5540Z is available at Aetrix Electronics and suitable for battery management systems, DC/DC converter designs, and MOSFET driver circuits requiring stable component supply, consistent parametric performance, and long-term industrial lifecycle support.

Supply support for PBSS5540Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

PBSS5540Z belongs to Nexperia's Low V_CEsat Transistor product line, engineered specifically for high-efficiency power switching in portable and thermally constrained applications where conduction loss and thermal management are primary design constraints.

FAQ

What is the maximum continuous collector current for PBSS5540Z?

The PBSS5540Z is rated for −5 A continuous collector current at T_amb ≤ 25 °C with a 6 cm² copper pad. Derating applies above 25 °C ambient per the thermal resistance curve; at 70 °C ambient, max continuous I_C drops to approximately −3.2 A to maintain T_j ≤ 150 °C.

Is PBSS5540Z pin-compatible with its NPN complement PBSS4540Z?

Yes-PBSS5540Z (PNP) and PBSS4540Z (NPN) share identical SOT223 (SC-73) package outline, pin numbering, and mechanical footprint. Pin 1 is base for both; pins 2 and 4 are collectors; pin 3 is emitter for PBSS5540Z and collector for PBSS4540Z-requiring board layout inversion for complementary use.

What is the recommended PCB layout for optimal thermal performance?

For best thermal performance, connect both collector pins (2 and 4) to a minimum 6 cm² single-sided copper pour on the component side, tin-plated, with no solder mask over the pad. Thermal vias to inner/ground planes are not specified in the datasheet and may reduce effectiveness unless designed per Nexperia's AN10325 guidelines.

Does PBSS5540Z meet automotive qualification standards?

No-PBSS5540Z is explicitly marked as non-automotive qualified per Revision History v.4 (2023). It is not tested to AEC-Q101 and lacks automotive-grade screening, traceability, or extended temperature validation. For automotive use, Nexperia offers the −Q qualified variant PBSS5540Z-Q.

PBSS5540Z,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 40 V

Vce Saturation (Max) @ Ib, Ic:: 160mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 2A, 2V

Power - Max:: 2 W

Frequency - Transition:: 120MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

PBSS5540Z,115 FAQ

1.How can I place an order for PBSS5540Z,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5540Z,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5540Z,115 reliable?

The price and inventory of PBSS5540Z,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5540Z,115 is usually 5 days.

3.What payment methods are accepted for PBSS5540Z,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5540Z,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5540Z,115?

PBSS5540Z,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5540Z,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5540Z,115?

For technical support, including PBSS5540Z,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5540Z,115 requirements.

6.How does Aetrix verify that PBSS5540Z,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5540Z,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5540Z,115 meets industry standards.

7.What is the process for return or replacement of PBSS5540Z,115?

All PBSS5540Z,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5540Z,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5540Z,115 part is unused and in its original packaging.

Return procedure for PBSS5540Z,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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