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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5560PA,115

Name: PBSS5560PA,115
Brand: Nexperia USA Inc.
SKU: PBSS5560PA,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5560PA,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: 3-PowerUDFN

Datasheet:: PBSS5560PA,115.pdf

Description:: TRANS PNP 60V 5A 3HUSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5560PA,115 from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in an ultra-thin leadless SOT1061 (HUSON3) package, rated for −60 V V_CEO, −5 A continuous collector current, and 55–90 mΩ R_CEsat at I_C = −5 A / I_B = −250 mA. It serves as a high-efficiency load switch in battery-powered power management circuits.

For engineers reviewing the PBSS5560PA,115 datasheet, PBSS5560PA,115 pinout, PBSS5560PA,115 application, or PBSS5560PA,115 equivalent, this device is selected for low-loss switching in compact DC-DC converters, motor drivers, and USB-C charging circuits where thermal performance and PCB area reduction are critical.

Technical Context

This PNP BISS transistor uses a proprietary epitaxial structure to achieve ultra-low saturation resistance while maintaining robust breakdown voltage and thermal stability. Its exposed collector pad enables direct thermal coupling to PCB copper, supporting up to 2.1 W dissipation on ceramic substrates.

The device operates with DC current gain (h_FE) of 90–135 at I_C = −5 A and exhibits fast switching: t_on = 88 ns, t_off = 410 ns under V_CC = −9 V, I_C = −2 A conditions - optimized for medium-frequency PWM control in portable power systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - Withstands reverse-biased collector-emitter voltage up to 60 V in open-base configuration, enabling use in 48 V rail switching.
I_C	−5 A - Continuous collector current rating supports high-current load switching without derating at T_amb ≤ 25 °C on 6 cm² FR4 copper.
R_CEsat	55–90 mΩ - Low saturation resistance minimizes conduction loss (P_loss ≈ 1.4 mW/A²), critical for efficiency in battery-driven devices.
t_off	410 ns - Fast turn-off time allows operation up to ~250 kHz PWM without significant switching loss accumulation.
P_tot	2.1 W - Maximum power dissipation on Al₂O₃ ceramic PCB, enabling higher current density than conventional SOT23/SOT223 alternatives.
R_th(j-a)	60 K/W - Junction-to-ambient thermal resistance on ceramic substrate ensures T_j stays below 150 °C at full load with minimal heatsinking.
h_FE	90–135 @ I_C = −5 A - Sufficient DC gain for direct microcontroller GPIO drive (I_B = −250 mA) without external amplification.

Pinout & Package

Package: SOT1061 (HUSON3), ultra-thin 2.0 × 2.0 × 0.65 mm leadless plastic package with exposed collector thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control input terminal; accepts −250 mA base drive for full saturation at −5 A collector current.
2	Emiter	Reference node for PNP operation; connected to higher potential rail (e.g., battery +) in high-side switch configurations.
3	Collector	Power output terminal with exposed metal pad; electrically and thermally connected to PCB copper for low-inductance, high-power routing.

Key Features

Feature	Design Value
Low V_CEsat	V_CEsat = −280 to −450 mV @ I_C = −5 A - Reduces voltage drop and self-heating in high-current load paths.
Exposed collector pad	Thermal resistance as low as 60 K/W on ceramic PCB - Enables passive cooling in space-constrained battery packs and wearables.
Ultra-thin SMD footprint	2.0 × 2.0 mm body size - Saves >50% PCB area vs. SOT223, critical for ultra-portable charging ICs and PMIC modules.
High peak current capability	I_CM = −6 A (1 ms pulse) - Supports inrush current handling in motor startup and hot-swap applications.

Applications

Load Switching

Battery Protection Circuits

Use Scenario: High-side power switch controlling 12–48 V loads in industrial handheld tools.

IC Role / Device Role / Timing Role: PNP BISS transistor operating in saturation mode as main current path switch, driven by MCU GPIO.

Use Value: 55 mΩ R_CEsat limits voltage drop to <0.28 V at 5 A, preserving battery runtime and reducing thermal stress on adjacent components.

Use Scenario: Reverse-polarity and overcurrent protection in USB-C PD power banks.

IC Role / Device Role / Timing Role: PNP switch placed between battery and system rail, activated only when polarity and current thresholds are validated.

Use Value: −60 V V_CEO withstands accidental reverse connection; fast t_off (410 ns) enables rapid fault isolation before damage occurs.

DC-DC Converter Sync Rectification

Motor/Fan Power Control

Use Scenario: Low-side synchronous rectifier in 5–24 V buck converter for IoT edge nodes.

IC Role / Device Role / Timing Role: PNP transistor used in complementary topology with N-channel MOSFET to reduce forward conduction loss during light-load operation.

Use Value: 90–135 h_FE ensures stable gate drive current delivery without external buffer, simplifying gate control circuitry.

Use Scenario: PWM-controlled fan driver in automotive cabin controllers and medical cooling units.

IC Role / Device Role / Timing Role: Medium-power PNP switch modulating 2–5 A fan current at 20–100 kHz PWM frequency.

Use Value: 88 ns t_on/410 ns t_off enables clean PWM edges with minimal shoot-through risk and audible noise suppression.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3007LPSQ-13	PNP, −30 V V_CEO, −4.5 A I_C, R_CEsat = 75–110 mΩ - lower voltage rating, larger SOT23-3 package.	Limited to ≤30 V systems; lacks exposed thermal pad, limiting power handling in sustained 4 A operation.	Select when cost sensitivity outweighs thermal performance and board space constraints.
PBSS5350PAS,115	PNP, −50 V V_CEO, −3.5 A I_C, R_CEsat = 85–130 mΩ - lower current/voltage, same SOT1061 package.	Insufficient for 5 A continuous loads; suitable only for sub-3 A battery switches or backup power paths.	Choose only if design requires footprint compatibility but operates below 3 A average current.

Compared with DMTC3007LPSQ-13 and PBSS5350PAS,115, PBSS5560PA,115 delivers 17% higher voltage margin, 43% higher continuous current, and 30% lower R_CEsat in the same ultra-compact footprint - making it the sole option for 48 V, 5 A load switching with thermal headroom.

Availability

PBSS5560PA,115 is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and motor/fan power switches requiring stable component supply across industrial, computing, and consumer product lifecycles.

Supply support for PBSS5560PA,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and consumer markets.

PBSS5560PA,115 belongs to Nexperia's BISS transistor family, engineered specifically for high-efficiency, space-constrained power switching in portable and battery-operated equipment.

FAQ

Is PBSS5560PA,115 automotive qualified?

No. PBSS5560PA,115 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling, or humidity testing. It is intended for industrial, computing, and consumer applications per its datasheet specification and Nexperia's non-automotive product classification.

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is −600 mA per Table 5 (Limiting Values). For reliable long-term operation at I_C = −5 A, Nexperia specifies I_B = −250 mA in the R_CEsat test condition - exceeding this risks thermal runaway or accelerated degradation.

Can PBSS5560PA,115 be used in linear regulator pass elements?

No. Its R_CEsat is optimized for saturation-mode switching, not linear operation. The device lacks safe operating area (SOA) characterization for linear use, and its thermal resistance assumes pulsed or switched duty cycles - not continuous DC bias.

Does the SOT1061 package require special reflow profile considerations?

Yes. Per Section 11 of the datasheet, only reflow soldering is recommended. The ultra-thin 0.65 mm profile and exposed thermal pad demand precise stencil aperture design (0.25 mm thickness, 0.4 mm openings) and controlled ramp rates to avoid tombstoning or voiding under the collector pad.

PBSS5560PA,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-PowerUDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 450mV @ 250mA, 5A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 2A, 2V

Power - Max:: 2.1 W

Frequency - Transition:: 90MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-HUSON (2x2)

PBSS5560PA,115 FAQ

1.How can I place an order for PBSS5560PA,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5560PA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5560PA,115 reliable?

The price and inventory of PBSS5560PA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5560PA,115 is usually 5 days.

3.What payment methods are accepted for PBSS5560PA,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5560PA,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS5560PA,115?

PBSS5560PA,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5560PA,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5560PA,115?

For technical support, including PBSS5560PA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5560PA,115 requirements.

6.How does Aetrix verify that PBSS5560PA,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5560PA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5560PA,115 meets industry standards.

7.What is the process for return or replacement of PBSS5560PA,115?

All PBSS5560PA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5560PA,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5560PA,115 part is unused and in its original packaging.

Return procedure for PBSS5560PA,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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