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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS5580PA,115

Name: PBSS5580PA,115
Brand: Nexperia USA Inc.
SKU: PBSS5580PA,115
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS5580PA,115

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: 3-PowerUDFN

Datasheet:: PBSS5580PA,115.pdf

Description:: TRANS PNP 80V 4A 3HUSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS5580PA,115 from Nexperia is a PNP low V_CEsat Breakthrough In Small Signal (BISS) transistor in an ultra-thin SOT1061 (HUSON3) leadless package, rated for −80 V V_CEO, −4 A I_C, and 65–105 mΩ R_CEsat at I_C = −4 A / I_B = −200 mA. It serves as a high-efficiency load switch in battery-powered power management circuits with minimal PCB footprint.

For engineers reviewing the PBSS5580PA,115 datasheet, PBSS5580PA,115 pinout, PBSS5580PA,115 application, or PBSS5580PA,115 equivalent, key selection criteria include verified low saturation resistance, thermal performance on FR4 vs. ceramic substrates, DC current gain stability across −55 °C to +150 °C, and switching timing (t_on = 100 ns, t_off = 445 ns) under defined test conditions.

Technical Context

This BISS transistor uses a proprietary PNP structure optimized for low V_CEsat without compromising switching speed-achieving f_T = 70–110 MHz and t_off = 445 ns at V_CC = −9 V, I_C = −2 A. Its exposed collector pad enables direct thermal coupling to PCB copper, delivering up to 2.1 W P_tot on a 6 cm² FR4 mounting pad.

The device operates across −55 °C to +150 °C ambient, with h_FE ranging from 70–110 at I_C = −4 A and V_CE = −2 V, and exhibits low leakage: I_CBO ≤ −100 nA at V_CB = −64 V and 25 °C. Cut-off and saturation parameters are characterized per IEC 60134 limiting values.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−80 V - Maximum safe collector-emitter voltage with base open; defines blocking capability in high-side switch configurations.
I_C	−4 A - Continuous DC collector current rating; supports sustained load switching in portable power rails.
R_CEsat	65–105 mΩ - Confirmed saturation resistance at I_C = −4 A / I_B = −200 mA; directly determines conduction loss and self-heating in steady-state operation.
f_T	70–110 MHz - Transition frequency measured at V_CE = −10 V, I_C = −100 mA; indicates usable bandwidth for moderate-speed switching control.
t_off	445 ns - Total turn-off time under V_CC = −9 V, I_C = −2 A, I_Boff = 0.1 A; critical for PWM efficiency in battery charging and motor drive applications.
h_FE	70–110 - DC current gain at I_C = −4 A, V_CE = −2 V; determines required base drive current for full saturation.
P_tot (max)	2.1 W - Maximum total power dissipation on ceramic Al₂O₃ PCB with standard footprint; enables higher power density than conventional SOT packages.

Pinout & Package

Package: SOT1061 (HUSON3), ultra-thin 2.0 × 2.0 × 0.65 mm leadless plastic package with exposed collector thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal requiring −200 mA base current to fully saturate at −4 A collector load; low V_BEsat (−0.95 to −1.1 V) reduces driver loss.
2	Emitter	Common reference node for PNP topology; connected to higher potential rail (e.g., battery positive) in high-side load switch configurations.
3	Collector	Power output terminal with exposed metal pad; provides primary thermal path to PCB and electrical connection to load; rated for −80 V reverse bias.

Key Features

Feature	Design Value
Low V_CEsat	V_CEsat = −265 to −420 mV at I_C = −4 A / I_B = −200 mA - Reduces conduction loss by >40% versus standard PNP transistors at same current.
Thermal-enhanced package	R_th(j-a) = 60 K/W on Al₂O₃ ceramic PCB - Enables 2.1 W power handling without heatsink, supporting compact battery charger designs.
High-speed switching	t_on = 100 ns, t_off = 445 ns - Supports PWM frequencies up to ~1 MHz in power management ICs with minimal dead-time penalty.
Wide temperature operation	Specified from −55 °C to +150 °C ambient - Validated for industrial and automotive-adjacent environments where thermal cycling impacts reliability.
Small PCB footprint	2.0 × 2.0 mm body size - Occupies 75% less area than comparable SO-8 or TO-252 devices, enabling dense portable electronics layouts.

Applications

Battery Load Switch

USB-C Power Delivery Switch

Use Scenario: High-side disconnect between Li-ion battery pack and system rail during sleep mode or fault condition.

IC Role / Device Role / Timing Role: PNP BISS transistor operating in saturation as a low-loss series pass element controlled by microcontroller GPIO.

Use Value: 65 mΩ R_CEsat limits voltage drop to <100 mV at 1.5 A, preserving battery runtime and minimizing thermal rise on 2-layer FR4.

Use Scenario: Directional power path control in dual-role USB-C ports managing source/sink transitions.

IC Role / Device Role / Timing Role: Fast-turning PNP switch enabling <500 ns response to PD controller fault signals for overcurrent protection.

Use Value: 445 ns t_off ensures compliance with USB-PD 3.1 fault response timing, preventing bus overvoltage during sink-to-source handover.

Wireless Charging Transmitter

Industrial Sensor Node Power Gate

Use Scenario: Enabling/disabling resonant power stage during idle periods to reduce quiescent consumption.

IC Role / Device Role / Timing Role: Medium-power PNP switch placed between DC input and half-bridge gate drivers.

Use Value: 2.1 W P_tot on ceramic substrate allows continuous 3.5 A peak current handling without derating, supporting 15 W Qi-compliant transmitters.

Use Scenario: Isolating sensor analog front-end from main MCU supply during deep-sleep cycles in IIoT nodes.

IC Role / Device Role / Timing Role: Low-leakage PNP switch (I_CES ≤ −100 nA) providing rail gating with <1 μA standby current.

Use Value: −100 nA I_CES at V_CE = −64 V ensures sub-μW power loss over 10-year deployment, meeting IEC 62443 energy budget targets.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT3005LPSQ-7	N-channel MOSFET (30 V, −5 A); requires level-shifting gate drive for high-side use; R_DS(on) = 45 mΩ @ V_GS = −10 V.	Not suitable for simple bipolar drive; better for high-frequency (>1 MHz) synchronous rectification where gate control is available.	Select only if existing design uses N-ch MOSFET gate drivers and thermal constraints allow higher V_GS overhead.
PBSS5350PAS,115	PNP BISS with lower V_CEO (−50 V) and I_C (−3.5 A); R_CEsat = 85–130 mΩ at I_C = −3.5 A / I_B = −175 mA.	Valid for ≤50 V systems (e.g., 24 V industrial rails); reduced current headroom limits use in 4 A battery charge paths.	Choose when cost sensitivity outweighs 80 V margin and 4 A rating; identical SOT1061 footprint enables drop-in layout reuse.

Compared with PBSS5580PA,115, DMT3005LPSQ-7 offers lower on-resistance but adds gate-drive complexity and voltage limitation, while PBSS5350PAS,115 trades 30 V blocking and 0.5 A current headroom for marginal cost reduction-neither matches the original's 80 V/4 A/65 mΩ combination in a single PNP BISS die.

Availability

PBSS5580PA,115 is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and charging circuits requiring stable component supply with consistent parametric performance across production lots.

Supply support for PBSS5580PA,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with core focus on automotive, industrial, computing, and consumer markets.

PBSS5580PA,115 belongs to Nexperia's BISS transistor product line-engineered specifically for high-efficiency, medium-power switching in space-constrained battery-operated and power-management applications.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current (I_B) is −600 mA per Table 5 (Limiting Values). However, for reliable long-term operation at I_C = −4 A, the datasheet specifies I_B = −200 mA in R_CEsat and V_CEsat test conditions. Exceeding −200 mA does not improve saturation and risks localized heating at the bond wire interface.

Can PBSS5580PA,115 be used in automotive applications?

No-PBSS5580PA,115 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or failure rate data per JESD47. The datasheet explicitly states it is "not suitable for automotive use" and carries no warranty for such applications, even if operating within −40 °C to +125 °C ambient.

How does thermal performance differ between FR4 and ceramic PCB mounting?

On standard FR4, R_th(j-a) = 250 K/W limits P_tot to 500 mW; with a 6 cm² collector pad, it improves to 90 K/W (1.4 W). On Al₂O₃ ceramic, R_th(j-a) = 60 K/W enables 2.1 W dissipation-confirmed in Table 5 and Figure 1. Layout must replicate the exact pad geometry specified in Figure 17 for these ratings to hold.

Is there a complementary NPN device available?

Yes-the NPN counterpart is PBSS4580PA, which shares the same SOT1061 package, 80 V V_CEO, 4 A I_C, and BISS architecture. Its R_CEsat is 55–90 mΩ at I_C = 4 A / I_B = 200 mA, and it is documented in the same datasheet revision (Rev. 01, 6 May 2010) as a direct functional complement.

PBSS5580PA,115 Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-PowerUDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 4 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 420mV @ 200mA, 4A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 140 @ 2A, 2V

Power - Max:: 2.1 W

Frequency - Transition:: 110MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 3-HUSON (2x2)

PBSS5580PA,115 FAQ

1.How can I place an order for PBSS5580PA,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS5580PA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS5580PA,115 reliable?

The price and inventory of PBSS5580PA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5580PA,115 is usually 5 days.

3.What payment methods are accepted for PBSS5580PA,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5580PA,115 transactions.

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4.How is shipping managed for PBSS5580PA,115?

PBSS5580PA,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS5580PA,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS5580PA,115?

For technical support, including PBSS5580PA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5580PA,115 requirements.

6.How does Aetrix verify that PBSS5580PA,115 is sourced from the original manufacturer or authorized distributors?

All PBSS5580PA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5580PA,115 meets industry standards.

7.What is the process for return or replacement of PBSS5580PA,115?

All PBSS5580PA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5580PA,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS5580PA,115 part is unused and in its original packaging.

Return procedure for PBSS5580PA,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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