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Nexperia USA Inc. PBSS5620PA,115
- Part No.:
- PBSS5620PA,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- 3-PowerUDFN
- Datasheet:
-
PBSS5620PA,115.pdf
- Description:
- TRANS PNP 20V 6A 3HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,598
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Product details
Overview
PBSS5620PA,115 from Nexperia is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra-thin leadless SOT1061 (HUSON3) package, rated for −20 V VCEO, −6 A IC, and 39–58 mΩ RCEsat at −6 A/−300 mA drive. It serves as a high-efficiency load switch in battery-powered power management circuits with minimal PCB footprint and enhanced thermal dissipation via exposed collector pad.
For engineers reviewing the PBSS5620PA,115 datasheet, PBSS5620PA,115 pinout, PBSS5620PA,115 application, or PBSS5620PA,115 equivalent, this device is selected for low-loss switching in compact DC-DC converters, motor drivers, and USB-C power delivery load control where VCEsat < −350 mV and thermal resistance as low as 60 K/W are critical.
Technical Context
This PNP BISS transistor uses a proprietary epitaxial structure to achieve ultra-low saturation resistance while maintaining robust switching speed: ton = 78 ns and toff = 320 ns under −9 V VCC, −2 A IC, and ±0.1 A base drive. Its current gain hFE ranges from 110–155 at −6 A, supporting stable operation across industrial ambient temperatures (−55 °C to +150 °C).
The device integrates an exposed collector terminal for direct thermal coupling to PCB copper, enabling power dissipation up to 2.1 W on ceramic substrates. Its SOT1061 package features 2 × 2 × 0.65 mm body dimensions and tin-plated terminations compatible with standard reflow profiles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −20 V - Maximum safe collector-emitter voltage with base open; defines blocking capability in high-side switch configurations. |
| IC | −6 A - Continuous DC collector current; supports sustained load switching in portable power rails and fan drivers. |
| RCEsat | 39–58 mΩ - Low-saturation resistance at −6 A/−300 mA; reduces conduction loss to ≤210 mW in typical 3.3 V–5 V systems. |
| toff | 320 ns - Total turn-off time; enables PWM operation up to ~300 kHz with controlled switching loss. |
| Rth(j-a) | 60–250 K/W - Junction-to-ambient thermal resistance; varies with PCB copper area, enabling scalable thermal design from 0.25 cm² to 6 cm² pads. |
| hFE | 110–155 @ −6 A - DC current gain at full rated current; ensures reliable base drive margin without excessive IB overhead. |
| VBEsat | −1.03 to −1.1 V @ −6 A/−300 mA - Base-emitter saturation voltage; determines minimum driver voltage headroom required for full turn-on. |
Pinout & Package
Package: SOT1061 (HUSON3), ultra-thin 2.0 × 2.0 × 0.65 mm leadless plastic package with exposed collector pad for thermal and electrical conduction. Body outline conforms to JEDEC MO-252 variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input node; requires −300 mA drive for full saturation at −6 A; low impedance path to internal emitter-base junction. |
| 2 | Emiter | Reference terminal for PNP operation; connected to system ground or higher potential rail depending on switch topology. |
| 3 | Collector | Main power output node; electrically and thermally tied to exposed bottom pad; must be routed to large copper pour for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low VCEsat | −235 to −350 mV at −6 A/−300 mA - Reduces conduction loss by >40% vs. conventional PNP transistors, extending battery life in portable devices. |
| Exposed collector pad | Direct thermal interface to PCB - Enables 2.1 W power dissipation on ceramic substrate, eliminating need for external heatsinks in space-constrained designs. |
| Small PCB footprint | 2.0 × 2.0 mm body - Saves >60% board area vs. SO-8 or TO-252 packages, critical for wearables and ultra-thin consumer electronics. |
| High peak current rating | ICM = −7 A (1 ms pulse) - Supports surge loads in motor startup and hot-swap applications without secondary protection. |
| Robust thermal performance | Rth(j-a) = 60 K/W with 6 cm² FR4 copper - Allows stable operation at Tj ≤ 150 °C under continuous −6 A load with minimal layout effort. |
Applications
| Battery Load Switch | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Isolating main Li-ion battery from peripheral circuits during sleep mode or fault conditions in smartphones and tablets. IC Role / Device Role / Timing Role: High-side PNP load switch controlling 3.3 V–4.2 V rail; operates in linear or saturated mode based on enable signal timing. Use Value: VCEsat < −350 mV minimizes standby voltage drop, preserving battery capacity; exposed collector maintains Tj < 105 °C at −4 A continuous. |
Use Scenario: Enabling/disabling VBUS path in USB-C receptacles during cable insertion, orientation detection, and power role negotiation. IC Role / Device Role / Timing Role: Bidirectional-capable PNP switch (with external diode or complementary NPN) managing 5 V/3 A VBUS routing with fast toff ≤ 320 ns. Use Value: Low RCEsat limits VBUS droop to < 210 mV at 3 A, ensuring PD contract compliance; SOT1061 footprint fits tight Type-C connector spacing. |
| DC-DC Converter Synchronous Rectifier | Fan/Motor Power Switch |
|
Use Scenario: Replacing Schottky diodes in buck converter synchronous rectification stages for improved efficiency in point-of-load regulators. IC Role / Device Role / Timing Role: PNP-controlled freewheeling switch synchronized with high-side MOSFET gate drive; requires precise ton/toff matching. Use Value: RCEsat of 39 mΩ cuts conduction loss by 55% vs. 400 mV Schottky, raising 12 V→3.3 V converter efficiency from 88% to 92.5% at 5 A. |
Use Scenario: Driving 12 V cooling fans or small DC motors in industrial controllers and network equipment with PWM speed control. IC Role / Device Role / Timing Role: Low-side or high-side power switch handling −6 A stall current; driven by microcontroller GPIO with base resistor network. Use Value: −7 A ICM withstands motor inrush; thermal resistance of 90 K/W (6 cm² FR4) prevents thermal shutdown during 100% duty cycle operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PMMBT5620 | Same die in SOT23-3 package; RCEsat = 45–65 mΩ, IC = −4 A, no exposed pad. | Limited to ≤1.5 W dissipation; unsuitable for sustained −6 A loads or high-thermal-density layouts. | Select when board space allows larger SOT23 footprint and thermal budget permits higher Rth(j-a). |
| DMT3005LPSQ-13 | PNP MOSFET (not BJT); VGS(th) = −1.5 V, RDS(on) = 42 mΩ, no base current requirement. | Eliminates base drive complexity but exhibits slower turn-off (toff ≈ 1.2 μs) and higher gate charge. | Select when driver IC lacks high-current sink capability or when gate-controlled switching simplifies control logic. |
Compared with PMMBT5620 and DMT3005LPSQ-13, PBSS5620PA,115 delivers superior thermal performance via its exposed collector pad and higher continuous current rating, making it optimal for compact, high-power-density load switching where both low VCEsat and thermal reliability are non-negotiable.
Availability
PBSS5620PA,115 is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and charging circuits requiring stable component supply across automotive-grade temperature ranges and long production lifecycles.
Supply support for PBSS5620PA,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with core expertise in high-volume, high-reliability silicon solutions.
PBSS5620PA,115 belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, space-constrained power switching in portable, industrial, and computing applications where low saturation voltage and thermal robustness are essential.
FAQ
What is the maximum continuous collector current for PBSS5620PA,115?
The maximum continuous collector current (IC) is −6 A at Tamb ≤ 25 °C with appropriate PCB copper area. Derating applies above 25 °C: at 100 °C ambient, max IC drops to approximately −3.5 A when mounted on FR4 with 6 cm² collector pad, per thermal resistance curves in the datasheet.
Can PBSS5620PA,115 be used in high-frequency PWM applications?
Yes - with ton = 78 ns and toff = 320 ns, PBSS5620PA,115 supports PWM frequencies up to 300 kHz in load-switching applications. However, switching losses increase above 100 kHz due to finite storage time (ts = 265 ns); gate/base drive strength and layout inductance must be optimized to maintain efficiency.
What is the recommended PCB layout for thermal performance?
For optimal thermal performance, connect Pin 3 (collector) to a ≥6 cm² copper pour on the component layer, using ≥4 thermal vias (0.3 mm diameter) to inner/ground planes. The SOT1061 footprint in Figure 17 specifies solder mask openings and paste stencil design; avoid solder mask over the exposed pad to ensure full thermal contact.
Is PBSS5620PA,115 automotive qualified?
No - PBSS5620PA,115 is not AEC-Q101 qualified and is intended for industrial, computing, and consumer applications. While its operating temperature range (−55 °C to +150 °C) overlaps with automotive requirements, it lacks the stress testing, failure analysis, and documentation mandated for automotive use per Nexperia's official qualification statements.
PBSS5620PA,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 6 A
- Voltage - Collector Emitter Breakdown (Max):
- 20 V
- Vce Saturation (Max) @ Ib, Ic:
- 350mV @ 300mA, 6A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 190 @ 2A, 2V
- Power - Max:
- 2.1 W
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-HUSON (2x2)
PBSS5620PA,115 FAQ
1.How can I place an order for PBSS5620PA,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS5620PA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS5620PA,115 reliable?
The price and inventory of PBSS5620PA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS5620PA,115 is usually 5 days.
3.What payment methods are accepted for PBSS5620PA,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS5620PA,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS5620PA,115?
PBSS5620PA,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS5620PA,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS5620PA,115?
For technical support, including PBSS5620PA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS5620PA,115 requirements.
6.How does Aetrix verify that PBSS5620PA,115 is sourced from the original manufacturer or authorized distributors?
All PBSS5620PA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS5620PA,115 meets industry standards.
7.What is the process for return or replacement of PBSS5620PA,115?
All PBSS5620PA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS5620PA,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS5620PA,115 part is unused and in its original packaging.
Return procedure for PBSS5620PA,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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