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Nexperia USA Inc. PBSS8110D,115
- Part No.:
- PBSS8110D,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- SC-74, SOT-457
- Datasheet:
-
PBSS8110D,115.pdf
- Description:
- TRANS NPN 100V 1A 6-TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:43,533
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Product details
Overview
PBSS8110D,115 from Nexperia is an NPN low VCE(sat) bipolar junction transistor (BISS) in SOT457 (SC-74) package, designed as a high-efficiency switch for 42 V automotive power rails and low-voltage peripheral drivers. It delivers 100 V VCEO, 1 A continuous collector current, 200 mΩ equivalent on-resistance at IC = 1 A, and 200 mV VCE(sat) under IC/IB = 10, enabling compact DC-DC converter output stages.
For engineers reviewing the PBSS8110D,115 datasheet, PBSS8110D,115 pinout, PBSS8110D,115 application, or PBSS8110D,115 equivalent, key selection criteria include verified low saturation voltage across temperature, validated thermal resistance with standard FR4 footprint, confirmed 6-pin SOT457 terminal mapping, and documented performance in inductive load switching at ≤1 A.
Technical Context
This BISS transistor uses optimized epitaxial base and emitter structures to achieve low VCE(sat) while maintaining 100 V breakdown rating and 150–500 hFE gain range at IC = 250 mA–1 A. Its RCE(sat) remains stable below 200 mΩ up to Tj = 150 °C, supporting thermally constrained PCB layouts.
The device operates with fixed IC/IB ratios of 10, 20, and 50, enabling predictable drive requirements in digital logic-level switched applications. Base-emitter saturation voltage stays ≤1.05 V at IC = 1 A, reducing gate driver losses in hybrid MOSFET-BJT configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Withstands transient overvoltage in 42 V automotive systems without breakdown. |
| IC (DC) | 1 A - Supports continuous switching of LED strings, relays, and small motors without derating at Tamb ≤ 70 °C. |
| VCE(sat) | 200 mV @ IC = 1 A, IB = 100 mA - Minimizes conduction loss to ≤200 mW in high-duty-cycle applications. |
| RCE(sat) | 160–200 mΩ - Enables direct comparison with logic-level MOSFETs in low-side switching where gate drive voltage is limited. |
| fT | 100 MHz - Sufficient for PWM frequencies up to 500 kHz with minimal gain roll-off in feedback-controlled converters. |
| hFE | 80–500 - Provides design margin for base drive tolerance across production lots and temperature extremes. |
| Ptot | 700 mW @ 6 cm² collector pad - Allows operation at full current with passive cooling on standard industrial PCBs. |
Pinout & Package
Package: SOT457 (SC-74), plastic surface-mounted, 6-lead TSOP package with exposed collector terminals for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Collector | Four parallel collector terminals reduce bond wire inductance and improve thermal spreading to PCB copper. |
| 3 | Base | Single-base input enables standard TTL/CMOS logic-level drive without external level-shifting circuitry. |
| 4 | Emitter | Dedicated emitter terminal provides low-inductance return path for high di/dt switching currents. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | 200 mV max at 1 A ensures <1% voltage drop in 24–42 V supply rail switching, improving system efficiency. |
| High IC capability | 1 A DC / 3 A peak rating supports sustained operation in relay coil drivers and buck converter synchronous rectification. |
| SOT457 thermal design | Four collector pins and large copper exposure enable 178 K/W Rth(j-a) with 6 cm² pad - 2.3× better than standard SOT23. |
| Wide operating temperature | −65 °C to +150 °C junction range qualifies for under-hood automotive and industrial control environments. |
| High hFE consistency | Min 80 at IC = 1 A guarantees reliable turn-on with ≤100 mA base current, simplifying driver IC selection. |
Applications
| Automotive 42 V Power Distribution | Industrial DC-DC Converter Output Stage |
|---|---|
|
Use Scenario: Switching 36–42 V battery-fed loads such as HVAC actuators and lighting modules in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Low-side power switch controlling load current with fast turn-on/off transitions and minimal heat generation. Use Value: 200 mV VCE(sat) limits power loss to 200 mW at 1 A, eliminating need for heatsinks in space-constrained junction boxes. |
Use Scenario: Synchronous rectifier in isolated 12 V → 3.3 V flyback converters for PLC I/O modules. IC Role / Device Role / Timing Role: High-current, low-loss replacement for Schottky diodes in secondary-side rectification. Use Value: 160–200 mΩ RCE(sat) reduces conduction loss by >40% vs. 400 mΩ Schottky, improving full-load efficiency from 82% to 86%. |
| LED & Lamp Driver | Inductive Load Driver (Relay/Buzzer) |
|
Use Scenario: Constant-current dimming of 24 V LED arrays in commercial signage and emergency lighting. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating LED string current up to 1 A. Use Value: Stable hFE (100–500) across temperature ensures consistent current regulation without feedback loop recalibration. |
Use Scenario: Driving 24 V/500 mA relay coils and piezoelectric buzzers in building automation panels. IC Role / Device Role / Timing Role: Fast-switching saturated transistor with integrated flyback path handling inductive kickback. Use Value: 100 V VCEO safely clamps 150 V+ inductive spikes without snubber networks, reducing BOM count by one component. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCE(sat) transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC817-40,215 | VCE(sat) = 500 mV @ IC = 500 mA; hFE = 250–600; SOT23 package | Limited to ≤500 mA loads; higher saturation loss increases thermal stress in 1 A designs. | Select only when board space is critical and current demand is ≤0.5 A. |
| DMT3006LPS-13 | 60 V VDS; 6.2 A ID; 20 mΩ RDS(on); SOT23-3 MOSFET | Requires ≥4.5 V gate drive; no inherent body diode reverse recovery; lower conduction loss but higher gate charge. | Prefer for high-frequency (>1 MHz) switching where gate drive voltage ≥4.5 V is available. |
Compared with BC817-40,215 and DMT3006LPS-13, PBSS8110D,115 uniquely balances 1 A current handling, 100 V blocking, and logic-level base drive in a thermally robust 6-pin package-making it optimal for cost-sensitive, medium-power automotive and industrial switching where MOSFET gate drive voltage is marginal.
Availability
PBSS8110D,115 is available at Aetrix Electronics and suitable for automotive 42 V power distribution, industrial DC-DC converter output stages, and LED/lamp driver circuits requiring stable component supply and long-term lifecycle support.
Supply support for PBSS8110D,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and computing markets.
PBSS8110D,115 belongs to Nexperia's BISS (Bipolar Integrated Schottky) transistor product line, engineered specifically for high-efficiency, high-current switching in space- and thermal-constrained applications where MOSFET gate drive voltage is limited.
FAQ
What is the maximum allowable base current for continuous operation?
The absolute maximum continuous base current is 0.3 A per datasheet limiting values. However, for reliable 1 A collector operation with IC/IB = 10, 100 mA base drive is sufficient and maintains safe thermal margins. Exceeding 100 mA does not improve saturation and risks localized heating at pin 3.
Can PBSS8110D,115 replace a MOSFET in a 24 V load switch?
Yes, when gate drive voltage is ≤3.3 V or 5 V and load current is ≤1 A. Its 200 mV VCE(sat) yields lower conduction loss than many logic-level MOSFETs with RDS(on) > 200 mΩ at low VGS. Unlike MOSFETs, it requires no gate resistor and has no capacitive turn-on delay.
Is the SOT457 package lead-free and RoHS compliant?
Yes. PBSS8110D,115 is manufactured in Malaysia per Nexperia's standard RoHS-compliant process, with lead-free matte tin plating on all terminals and full compliance with EU Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1.
How does thermal performance change with PCB copper area?
Rth(j-a) improves from 416 K/W (standard footprint) to 178 K/W (6 cm² collector pad), enabling 1 A operation at +85 °C ambient without forced air. The four collector pins (pins 1,2,5,6) must be routed to a common thermal pad for full benefit.
PBSS8110D,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 250mA, 10V
- Power - Max:
- 700 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
PBSS8110D,115 FAQ
1.How can I place an order for PBSS8110D,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS8110D,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS8110D,115 reliable?
The price and inventory of PBSS8110D,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS8110D,115 is usually 5 days.
3.What payment methods are accepted for PBSS8110D,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS8110D,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS8110D,115?
PBSS8110D,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS8110D,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS8110D,115?
For technical support, including PBSS8110D,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS8110D,115 requirements.
6.How does Aetrix verify that PBSS8110D,115 is sourced from the original manufacturer or authorized distributors?
All PBSS8110D,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS8110D,115 meets industry standards.
7.What is the process for return or replacement of PBSS8110D,115?
All PBSS8110D,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS8110D,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS8110D,115 part is unused and in its original packaging.
Return procedure for PBSS8110D,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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