NXP Semiconductors PBSS8110S,126

Overview

PBSS8110S,126 from NXP Semiconductors is an NPN low V_CEsat BISS transistor in SOT54 (TO-92) package, rated for 100 V V_CEO, 1 A DC collector current, and 200 mΩ R_CEsat at I_C = 1 A. It serves as a high-efficiency switching element in DC/DC converters and battery charger circuits where low conduction loss is critical.

For engineers reviewing the PBSS8110S,126 datasheet, PBSS8110S,126 pinout, PBSS8110S,126 application, or PBSS8110S,126 equivalent, key selection criteria include verified V_CEsat ≤ 200 mV at 1 A, thermal resistance of 150 K/W on FR4, and compatibility with 42 V automotive power rails and inductive load drivers.

Technical Context

This device implements a bipolar junction transistor architecture optimized for low saturation voltage via BISS (Buried Layer Integrated Schottky) process, enabling higher efficiency than standard BJT alternatives. Its 100 V V_CEO rating and 3 A peak collector current support robust operation in telecom supply line switching and industrial motor control.

The PBSS8110S,126 delivers 100 MHz f_T and 7.5 pF C_c, confirming suitability for medium-frequency switching applications. With V_BEsat = 1.05 V and h_FE ≥ 80 at 1 A, it ensures reliable base drive margin while maintaining low gate-drive-equivalent losses.

Key Specifications

Pinout & Package

SOT54 (TO-92) plastic single-ended leaded through-hole package with standard 2.54 mm lead pitch and 14.5 mm body length; designed for manual or wave solder assembly on FR4 boards.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CEsat transistor applications.

Compared with ZTX851 and MJD122G, the PBSS8110S,126 uniquely combines 100 V rating, sub-200 mV V_CEsat, and SOT54 form factor-enabling compact, efficient switching in 42 V automotive and telecom infrastructure without thermal derating or layout compromise.

Availability

PBSS8110S,126 is available at Aetrix Electronics and suitable for DC/DC converters, battery chargers, and LCD backlighting applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for PBSS8110S,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

The PBSS8110S,126 belongs to NXP's BISS transistor family engineered specifically for high-efficiency, high-voltage switching in automotive 42 V architectures and telecom power management subsystems.

FAQ

What is the maximum continuous collector current for PBSS8110S,126?

The PBSS8110S,126 has a maximum DC collector current (I_C) of 1 A, validated under standard FR4 PCB conditions with single-sided copper. This rating assumes ambient temperature ≤25 °C and accounts for thermal derating above that point using its 150 K/W junction-to-ambient thermal resistance. Operation at full 1 A requires adequate PCB copper area to maintain junction temperature below 150 °C.

Does PBSS8110S,126 support 42 V automotive power systems?

Yes, the PBSS8110S,126 supports 42 V automotive power systems with its 100 V V_CEO rating and 120 V V_CBO, providing ≥2× margin over nominal 42 V bus with transient tolerance. Its 150 °C maximum junction temperature and robust BISS construction ensure reliability in under-hood environments where ambient temperatures exceed 105 °C.

What is the typical V_CEsat of PBSS8110S,126 at 1 A collector current?

The typical V_CEsat of PBSS8110S,126 is 165 mV, with a maximum of 200 mV at I_C = 1 A and I_B = 100 mA, measured at T_j = 25 °C. This low saturation voltage directly reduces conduction loss to ≤200 mW, making PBSS8110S,126 especially effective in high-duty-cycle switching applications like LED backlight drivers.

Is PBSS8110S,126 pin-compatible with standard TO-92 transistors?

Yes, PBSS8110S,126 uses the SOT54 package, which is identical to TO-92 in outline, lead count, and pin configuration (pin 1 = base, pin 2 = collector, pin 3 = emitter). It is mechanically compatible with existing TO-92 footprints and wave-solder tooling, though electrical performance exceeds legacy TO-92 devices due to its BISS process and lower R_CEsat.

What is the thermal resistance (R_{th j-a}) of PBSS8110S,126 on a standard PCB?

The thermal resistance from junction to ambient (R_{th j-a}) for PBSS8110S,126 is 150 K/W when mounted on a standard FR4 PCB with single-sided copper, tinplated, and using the manufacturer-recommended footprint. This value is measured in free air and forms the basis for calculating safe operating area limits under real-world board-level thermal conditions.