Nexperia USA Inc. PBSS8110T,215

Overview

PBSS8110T,215 from Nexperia is a 100 V, 1 A NPN low-V_CE(sat) transistor in SOT23 package, designed for high-efficiency switching in power management and load-driving applications. It delivers R_CE(sat) = 165 mΩ (typ) at I_C = 1 A / I_B = 100 mA, supports peak current up to 3 A, and operates across −65 °C to +150 °C ambient range - used in DC/DC converters and inductive load drivers.

For engineers reviewing the PBSS8110T,215 datasheet, PBSS8110T,215 pinout, PBSS8110T,215 application, or PBSS8110T,215 equivalent, key selection criteria include verified V_CE(sat) ≤ 200 mV at rated current, thermal resistance of 260 K/W with 1 cm² collector pad, and compatibility with standard SOT23 reflow footprints per Fig. 17.

Technical Context

This NPN transistor uses epitaxial planar die construction optimized for low saturation voltage and fast switching in medium-voltage switching circuits. Its V_CEO = 100 V and V_CBO = 120 V support operation in 42 V automotive supply rails and telecom line-switching topologies.

The device features h_FE ≥ 80 at I_C = 1 A and exhibits stable R_CE(sat) performance across temperature (−55 °C to +100 °C), validated under pulsed conditions (t_p ≤ 300 µs, duty δ ≤ 0.02) to ensure reliability in repetitive load-switching scenarios.

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, single-sided FR4 mounting with standard footprint per Fig. 17.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-V_CE(sat) transistor applications.

Compared with PBSS8110T,215, DMN2004K-7 offers lower on-resistance but fails at >20 V, while PBSS4041T,215 achieves better saturation at half the voltage rating - making PBSS8110T,215 the sole option balancing 100 V capability, 1 A current, and sub-200 mV V_CE(sat) in SOT23.

Availability

PBSS8110T,215 is available at Aetrix Electronics and suitable for DC/DC converters, inductive load drivers, battery chargers, and LCD backlighting requiring stable component supply across automotive, industrial, and telecom infrastructure programs.

Supply support for PBSS8110T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, and consumer markets with ISO/TS 16949-certified manufacturing.

PBSS8110T,215 belongs to Nexperia's "Low V_CE(sat) Transistor" product line, engineered specifically for energy-efficient switching in space-constrained power stages where thermal and conduction losses must be minimized.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is 300 mA per Table 5. For reliable continuous operation at I_C = 1 A, design with I_B = 100 mA (10:1 ratio) to maintain V_CE(sat) ≤ 200 mV and avoid thermal stress. Exceeding 100 mA does not improve saturation but increases base drive power dissipation.

Can PBSS8110T,215 replace a standard BC817 in existing SOT23 designs?

Yes - it shares identical SOT23 pinout and footprint, but delivers significantly lower V_CE(sat) (200 mV vs. ~500 mV for BC817-40) and higher V_CEO (100 V vs. 45 V). Verify that base drive capability supports 100 mA and that layout accommodates its slightly higher power dissipation at full load.

Is PBSS8110T,215 automotive-qualified?

No - this part is not AEC-Q101 qualified. While it operates from −65 °C to +150 °C and supports 42 V systems, Nexperia explicitly states in Section 14 that non-automotive-qualified products are not tested to automotive reliability standards and carry no warranty for safety-critical vehicle applications.

How does thermal performance change with PCB copper area?

R_th(j-a) improves from 417 K/W (standard footprint) to 260 K/W when using a 1 cm² copper pad under the collector (Table 6). This 38% reduction lowers junction temperature by ~35 °C at 1 A continuous, directly extending lifetime and enabling higher ambient operation in sealed enclosures.