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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Nexperia USA Inc. PBSS8110T-QR

Name: PBSS8110T-QR
Brand: Nexperia USA Inc.
SKU: PBSS8110T-QR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PBSS8110T-QR

Manufacturer:: Nexperia USA Inc.

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: PBSS8110T-QR.pdf

Description:: TRANS NPN 100V 1A TO-236AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PBSS8110T-QR from Nexperia is a 100 V, 1 A NPN low V_CEsat transistor in SOT23 package, designed as a high-efficiency switching element for automotive and industrial power control circuits. It delivers R_CEsat = 165 mΩ (typ) at I_C = 1 A / I_B = 100 mA, supports 3 A peak pulsed current, and is AEC-Q101 qualified for under-hood automotive use including 42 V supply line switching and relay drivers.

For engineers reviewing the PBSS8110T-QR datasheet, PBSS8110T-QR pinout, PBSS8110T-QR application, or PBSS8110T-QR equivalent, this device is selected for low-loss DC/DC converter switches, battery charger load control, and inductive load driving where <200 mV saturation voltage and thermal robustness up to 150 °C junction temperature are critical.

Technical Context

This NPN transistor operates in saturation mode with tightly controlled V_CEsat ≤ 200 mV and R_CEsat = 165–200 mΩ, enabling minimal conduction loss in high-current switching paths. Its 100 V V_CEO rating and 120 V V_CBO support operation in 42 V automotive systems with margin for transients.

The device uses standard SOT23 footprint with collector-connected tab for enhanced thermal dissipation (R_th(j-a) = 260 K/W with 1 cm² copper pad), and exhibits h_FE ≥ 80 at I_C = 1 A, ensuring reliable drive with modest base current in low-voltage control logic interfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - Withstands 42 V automotive system transients with safety margin
I_C	1 A continuous - Supports sustained load currents in peripheral drivers and LED backlights
R_CEsat	165 mΩ (typ) - Delivers <200 mV drop at 1 A, reducing power loss vs. standard transistors
h_FE	≥80 at I_C = 1 A - Enables direct drive from 3.3 V/5 V microcontrollers without external amplification
T_j max	150 °C - Qualified for under-hood automotive environments per AEC-Q101
P_tot	480 mW at T_amb ≤ 25 °C - Sufficient for compact SOT23 layout with thermal pad
f_T	100 MHz - Supports fast switching in DC/DC converters up to several hundred kHz

Pinout & Package

SOT23 (TO-236AB) surface-mount plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, collector-connected tab for thermal enhancement.

Pin	Circuit Role	Design Meaning
1	Base (B)	Control input requiring ~100 mA base current to saturate at 1 A collector load
2	Emitter (E)	Common return path; internally connected to PCB ground plane in typical low-side switch configuration
3	Collector (C)	High-current output node; soldered to 1 cm² copper pad for thermal management and current handling

Key Features

Feature	Design Value
Low V_CEsat	≤200 mV at I_C = 1 A / I_B = 100 mA - Reduces conduction loss by >50% vs. standard bipolar transistors
AEC-Q101 qualification	Qualified for automotive applications - Validated for temperature cycling, HTRB, and ESD per AEC stress test standards
High peak current capability	I_CM = 3 A (tp ≤ 1 ms) - Handles motor startup surges and relay coil inrush without failure
Thermal performance	R_th(j-a) = 260 K/W with 1 cm² collector pad - Enables 480 mW dissipation in space-constrained layouts
Robust breakdown ratings	V_CBO = 120 V, V_EBO = 5 V - Ensures safe operation in noisy 42 V supply rails with reverse-bias protection

Applications

Automotive 42 V Power Switching

DC/DC Converter Primary Switch

Use Scenario: High-side or low-side switching of 42 V loads such as HVAC actuators, seat controls, and lighting modules in modern vehicle architectures.

IC Role / Device Role / Timing Role: NPN power switch operating in saturation mode, driven by PWM controller or microcontroller GPIO.

Use Value: 100 V V_CEO and AEC-Q101 qualification ensure reliability across load dump transients; 165 mΩ R_CEsat minimizes heat generation during continuous 1 A operation.

Use Scenario: Low-voltage, high-efficiency buck converter stage converting 12 V or 42 V to 3.3 V/5 V for infotainment or ADAS subsystems.

IC Role / Device Role / Timing Role: Main switching transistor in non-synchronous buck topology, switching at ≤500 kHz.

Use Value: 100 MHz f_T and fast V_CEsat response enable clean turn-on/turn-off; low R_CEsat improves conversion efficiency above 85% at 1 A output.

Battery Charger Load Control

Inductive Load Driver (Relays/Buzzers)

Use Scenario: On/off control of charging current path between Li-ion battery pack and USB-C PD or wireless charging circuitry.

IC Role / Device Role / Timing Role: Series pass switch placed between input source and charge management IC, controlled by battery fuel gauge MCU.

Use Value: 1 A continuous rating and 3 A pulse capability handle full-charge currents; low V_CEsat prevents voltage droop that could trigger premature charge termination.

Use Scenario: Driving 12 V or 24 V electromagnetic relays, piezoelectric buzzers, and small DC motors in industrial HMIs and building automation panels.

IC Role / Device Role / Timing Role: Low-side driver with integrated flyback diode (external) managing inductive kickback during turn-off.

Use Value: 150 °C T_j max and robust V_CEO withstand repeated inductive spikes; h_FE ≥80 ensures stable saturation even with aging base drive circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low V_CEsat transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NSS12201LT1G	V_CEO = 60 V, R_CEsat = 220 mΩ (typ) at I_C = 1 A	Limited to 24 V systems; lower surge immunity	Select when cost sensitivity outweighs 42 V requirement and thermal margin is less constrained
Diodes Incorporated DXT7010P5-13	V_CEO = 100 V, R_CEsat = 190 mΩ (typ), AEC-Q101 qualified	Same voltage rating but higher R_CEsat; SOT23-3L package with different pinout (C-B-E)	Choose only if board layout accommodates reversed collector/emitter placement and 30 mΩ higher on-resistance is acceptable

Compared with NSS12201LT1G and DXT7010P5-13, PBSS8110T-QR provides superior conduction efficiency (165 mΩ vs. ≥190 mΩ) and guaranteed 42 V automotive compatibility, making it optimal for thermally dense, high-reliability power switching where voltage margin and loss minimization are prioritized.

Availability

PBSS8110T-QR is available at Aetrix Electronics and suitable for automotive 42 V power switching, industrial DC/DC converters, and battery charger load control requiring stable component supply across long production lifecycles.

Supply support for PBSS8110T-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

PBSS8110T-QR belongs to Nexperia's Automotive-Qualified Low V_CEsat Transistor product line, engineered specifically for efficient, robust power switching in harsh-environment 42 V automotive systems and high-density industrial power supplies.

FAQ

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is 300 mA per datasheet limiting values. For reliable continuous 1 A collector operation, IB = 100 mA is recommended to maintain V_CEsat ≤ 200 mV while staying within safe SOA limits and avoiding thermal runaway at elevated ambient temperatures.

Can PBSS8110T-QR be used in high-frequency switching applications above 1 MHz?

No - although its f_T is 100 MHz, the device is optimized for low-saturation switching up to ~500 kHz. At frequencies above 1 MHz, switching losses dominate due to minority-carrier storage time, and MOSFETs with faster gate drive are preferred for efficiency and thermal stability.

Does the SOT23 package include an exposed thermal pad?

No - the SOT23 (TO-236AB) package has no exposed pad. Thermal performance relies on soldering pin 3 (collector) to a 1 cm² copper area on the PCB, which reduces R_th(j-a) from 417 K/W to 260 K/W and enables full 480 mW power dissipation at 25 °C ambient.

Is there a PNP complement available for complementary switching designs?

Yes - PBSS9110T-Q is the designated PNP complement, sharing identical 100 V V_CEO, 1 A I_C, and AEC-Q101 qualification. Its pinout is mirrored (1=C, 2=E, 3=B), enabling matched pair design in H-bridge or complementary emitter-follower configurations.

PBSS8110T-QR Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 1 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 200mV @ 100mA, 1A

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 250mA, 10V

Power - Max:: 300 mW

Frequency - Transition:: 100MHz

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: TO-236AB

PBSS8110T-QR FAQ

1.How can I place an order for PBSS8110T-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS8110T-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS8110T-QR reliable?

The price and inventory of PBSS8110T-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS8110T-QR is usually 5 days.

3.What payment methods are accepted for PBSS8110T-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS8110T-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS8110T-QR?

PBSS8110T-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS8110T-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS8110T-QR?

For technical support, including PBSS8110T-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS8110T-QR requirements.

6.How does Aetrix verify that PBSS8110T-QR is sourced from the original manufacturer or authorized distributors?

All PBSS8110T-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS8110T-QR meets industry standards.

7.What is the process for return or replacement of PBSS8110T-QR?

All PBSS8110T-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS8110T-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS8110T-QR part is unused and in its original packaging.

Return procedure for PBSS8110T-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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