Nexperia USA Inc. PBSS8110TVL
- Part No.:
- PBSS8110TVL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
PBSS8110TVL.pdf
- Description:
- TRANS NPN 100V 1A TO-236AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
PBSS8110TVL from Nexperia is a 100 V, 1 A NPN low VCEsat transistor in SOT23 package, designed as a high-efficiency switching element for power management and load control circuits. It delivers RCEsat = 165–200 mΩ at IC = 1 A / IB = 100 mA, supports peak current up to 3 A, and operates across −65 °C to +150 °C ambient range-used in DC/DC converters and inductive load drivers.
For engineers reviewing the PBSS8110TVL datasheet, PBSS8110TVL pinout, PBSS8110TVL application, or PBSS8110TVL equivalent, key selection criteria include verified VCEsat performance under pulsed 1 A conditions, thermal resistance (Rth(j-a) = 260 K/W with 1 cm² collector pad), and compatibility with low-voltage drive (VBEsat ≤ 1.05 V) in space-constrained SMT designs.
Technical Context
This NPN transistor employs epitaxial planar technology optimized for low saturation voltage and high current gain (hFE ≥ 80 at IC = 1 A). Its breakdown ratings-VCEO = 100 V, VCBO = 120 V, VEBO = 5 V-support robust operation in 42 V automotive and telecom power rails.
The device uses standard SOT23 footprint with defined thermal pad layout (1 cm² copper for collector), enabling predictable power derating per Figure 1. Transient thermal impedance curves (Fig. 2–3) confirm suitability for repetitive pulse loads with duty cycles down to δ = 0.02.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum safe collector-emitter voltage with base open; enables use in 42 V automotive systems with margin. |
| IC | 1 A continuous - Rated DC collector current; supports sustained switching of LED backlights or peripheral drivers. |
| RCEsat | 165–200 mΩ - Confirmed on-resistance at IC = 1 A / IB = 100 mA; reduces conduction loss vs. standard transistors. |
| hFE | ≥80 - DC current gain at IC = 1 A; ensures reliable saturation with moderate base drive. |
| VCEsat | ≤200 mV - Measured saturation voltage under pulsed conditions; critical for low-drop switching in battery chargers. |
| fT | 100 MHz - Transition frequency at VCE = 10 V / IC = 50 mA; supports fast switching in DC/DC control loops. |
Pinout & Package
Package: SOT23 (TO-236AB), surface-mounted plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base (B) | Control input requiring ~100 mA drive for full saturation; low VBEsat (≤1.05 V) eases MCU-level interfacing. |
| 2 | Emitter (E) | Common return path; internally connected to substrate; must be routed with low-inductance trace for pulse stability. |
| 3 | Collector (C) | Main power output terminal; thermally enhanced via 1 cm² PCB copper pad (Rth(j-a) = 260 K/W). |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | ≤200 mV at IC = 1 A - Reduces power dissipation by >50% vs. conventional transistors in same package. |
| High ICM | 3 A peak (tp ≤ 1 ms) - Supports surge currents in relay/motor turn-on without secondary protection. |
| Wide Tamb | −65 °C to +150 °C - Validated operation across industrial and under-hood automotive environments. |
| Optimized hFE | ≥80 at IC = 1 A - Ensures stable saturation with minimal base current overhead in low-power controllers. |
Applications
| DC/DC Converter Switch | Battery Charger Control |
|---|---|
|
Use Scenario: High-efficiency buck converter stage in telecom power supply operating at 48 V input. IC Role / Device Role / Timing Role: Main switching transistor replacing MOSFET where gate drive complexity or cost must be minimized. Use Value: 200 mV VCEsat limits conduction loss to <100 mW at 0.5 A, improving thermal margin over standard BJTs. |
Use Scenario: Constant-current charging switch for 3-cell Li-ion battery pack with 12.6 V max. IC Role / Device Role / Timing Role: Series pass element controlled by analog feedback loop. Use Value: Low RCEsat (165 mΩ) enables precise current regulation with <15 mV sensing offset at 1 A. |
| LCD Backlight Driver | Inductive Load Switch |
|
Use Scenario: PWM-driven white LED string (20–30 V forward) in industrial display panel. IC Role / Device Role / Timing Role: Low-side current sink switching at 1–10 kHz. Use Value: Fast fT (100 MHz) and low storage time ensure clean PWM edges with <1 µs turn-off delay. |
Use Scenario: Driving 24 V DC relay coil (80 Ω, 300 mA) in programmable logic controller I/O module. IC Role / Device Role / Timing Role: Snubberless inductive switch with integrated flyback energy handling. Use Value: 100 V VCEO withstands >2× coil flyback spikes; 3 A ICM absorbs turn-off surges without clamping diode. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS12201LT1G | VCEO = 60 V, RCEsat = 220 mΩ @ IC = 0.5 A | Lower voltage rating limits use to ≤24 V systems; higher RCEsat increases loss at 1 A. | Select when cost sensitivity outweighs 100 V requirement and peak current stays below 0.5 A. |
| Diodes Incorporated DXT75100QZ-13 | VCEO = 100 V, RCEsat = 180 mΩ @ IC = 1 A, but hFE = 60 min | Lower hFE demands higher base drive current (≥167 mA) for same saturation. | Prefer when tighter VCEsat tolerance is needed and base drive capability exceeds 150 mA. |
Compared with NSS12201LT1G and DXT75100QZ-13, PBSS8110TVL provides superior combination of 100 V rating, 1 A continuous current, and hFE ≥ 80-enabling lower base drive power and broader system voltage compatibility without sacrificing saturation efficiency.
Availability
PBSS8110TVL is available at Aetrix Electronics and suitable for DC/DC converters, battery chargers, and inductive load switching requiring stable component supply across industrial and telecom production programs.
Supply support for PBSS8110TVL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for mass-market applications.
PBSS8110TVL belongs to Nexperia's low VCEsat transistor product line, engineered specifically for high-current, low-loss switching in space-constrained power management and load control systems.
FAQ
What is the maximum allowable base current for PBSS8110TVL?
The absolute maximum base current is 300 mA, as specified in Table 5 (Limiting Values). However, for reliable 1 A collector current operation with low VCEsat, the datasheet recommends IB = 100 mA (IC/IB = 10). Exceeding 100 mA offers diminishing returns on saturation improvement while increasing driver circuit losses.
Can PBSS8110TVL replace a MOSFET in low-side switching applications?
Yes, it can replace small-signal MOSFETs in low-frequency (<100 kHz), high-current, low-voltage-drop applications where gate drive complexity or cost is a concern. Its 200 mV VCEsat at 1 A matches many 20 V MOSFETs, but it requires active base current control rather than voltage-only drive.
Is PBSS8110TVL qualified for automotive applications?
No-PBSS8110TVL is not AEC-Q101 qualified. While its operating temperature range (−65 °C to +150 °C) overlaps automotive requirements, Nexperia explicitly states in Section 14 that non-automotive-qualified products are not tested or warranted for automotive use, including safety-critical or life-support systems.
How does thermal performance change with PCB copper area?
Rth(j-a) improves from 417 K/W (standard footprint) to 260 K/W when a 1 cm² copper pad is used under the collector (Table 6). This 38% reduction allows 1.8× higher continuous power dissipation (480 mW vs. 300 mW) at Tamb = 25 °C, directly extending safe operating area in compact layouts.
PBSS8110TVL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 250mA, 1V
- Power - Max:
- -
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
PBSS8110TVL FAQ
1.How can I place an order for PBSS8110TVL through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS8110TVL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS8110TVL reliable?
The price and inventory of PBSS8110TVL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS8110TVL is usually 5 days.
3.What payment methods are accepted for PBSS8110TVL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS8110TVL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS8110TVL?
PBSS8110TVL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS8110TVL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS8110TVL?
For technical support, including PBSS8110TVL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS8110TVL requirements.
6.How does Aetrix verify that PBSS8110TVL is sourced from the original manufacturer or authorized distributors?
All PBSS8110TVL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS8110TVL meets industry standards.
7.What is the process for return or replacement of PBSS8110TVL?
All PBSS8110TVL units undergo pre-shipment inspection (PSI). If there is an issue with PBSS8110TVL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS8110TVL part is unused and in its original packaging.
Return procedure for PBSS8110TVL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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