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Nexperia USA Inc. PBSS8110Z,135
- Part No.:
- PBSS8110Z,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
PBSS8110Z,135.pdf
- Description:
- TRANS NPN 100V 1A SOT-223
- Quantity:
- Payment:
- Shipping:
Inventory:8,753
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Product details
Overview
PBSS8110Z,135 from Nexperia is an AEC-Q101-qualified NPN low VCEsat transistor in SOT223 (SC-73) package, rated for 100 V VCEO, 1 A continuous collector current, and 160–200 mΩ RCEsat. It serves as a high-voltage switching element in automotive power stages, MOSFET gate drivers, and DC-DC converters where low conduction loss and thermal efficiency are critical.
For engineers reviewing the PBSS8110Z,135 datasheet, PBSS8110Z,135 pinout, PBSS8110Z,135 application, or PBSS8110Z,135 equivalent, key selection criteria include its 100 V blocking capability, 1 A IC rating at Tamb = 25 °C, 200 mV VCEsat at IC = 1 A / IB = 100 mA, AEC-Q101 qualification, and SOT223 thermal performance with 1.4 W Ptot on 6 cm² copper pad.
Technical Context
This NPN transistor employs a low-saturation-voltage silicon epitaxial planar structure optimized for high-voltage switching with minimal power dissipation. Its design targets stable hFE ≥ 80 at IC = 1 A and fast switching (ton = 245 ns, toff = 550 ns) under 10 V VCC and 0.025 A drive conditions.
The device features dual-collector terminals (Pins 2 and 4) in the SOT223 package to enhance thermal conduction and current handling. Its RCEsat remains stable across -55 °C to 100 °C, with typical values of 160 mΩ at 25 °C and 200 mΩ at 100 °C under pulsed conditions (tp ≤ 300 µs, δ ≤ 0.02).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum safe collector-emitter voltage with base open; enables use in 48 V+ automotive and industrial DC-DC topologies. |
| IC | 1 A continuous - Rated DC collector current at Tamb = 25 °C; supports sustained switching in motor control and power switch applications. |
| RCEsat | 160–200 mΩ - Low saturation resistance reduces I²R losses and heat generation, improving system efficiency and easing thermal design. |
| VCEsat | 200 mV @ IC = 1 A, IB = 100 mA - Confirmed low saturation voltage ensures minimal voltage drop during conduction, critical for high-side gate driving. |
| hFE | 80 min @ IC = 1 A - High DC current gain at full load enables efficient base drive with reduced driver current requirements. |
| fT | 100 MHz - Transition frequency supports reliable operation in medium-speed switching circuits up to ~10 MHz practical switching frequencies. |
| AEC-Q101 | Qualified - Validated for automotive temperature range (-40 °C to +150 °C) and reliability stress tests, suitable for under-hood applications. |
Pinout & Package
The PBSS8110Z,135 is housed in a SOT223 (SC-73) surface-mount plastic package with four leads, 2.3 mm pitch, and integrated heatsink pad (Pin 2 and Pin 4 both connected to collector). Dimensions: 6.5 mm × 3.5 mm × 1.65 mm body; thermal resistance Rth(j-sp) = 17 K/W to solder point.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input; requires ~100 mA base current to saturate 1 A collector current, enabling direct microcontroller or logic-level drive with appropriate buffering. |
| 2 | Collector | Main high-current output terminal; electrically tied to Pin 4; designed for PCB copper pour attachment to dissipate up to 1.4 W. |
| 3 | Emiter | Reference/return path for collector current; common emitter configuration enables standard NPN switching topology with grounded load or high-side driver bootstrap support. |
| 4 | Collector | Second collector terminal; parallel connection with Pin 2 improves thermal conduction and current sharing, reducing localized heating in high-power pulses. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | 200 mV at full 1 A load - Reduces conduction loss by >50% vs. standard bipolar transistors, directly lowering junction temperature rise. |
| Dual-collector thermal path | Pins 2 & 4 both connect to collector - Doubles effective thermal interface area to PCB, enabling 1.4 W power dissipation with 6 cm² copper pad. |
| High hFE at high IC | ≥80 at IC = 1 A - Maintains strong current amplification under full load, minimizing required base drive power and simplifying driver stage design. |
| AEC-Q101 qualification | Validated for automotive ambient range (-40 °C to +150 °C) - Ensures reliability in engine control units, body electronics, and ADAS power subsystems. |
| Fast switching | ton = 245 ns, toff = 550 ns - Enables efficient operation in PWM-based DC-DC converters and motor controllers operating up to several hundred kHz. |
Applications
| High-Voltage DC-DC Conversion | Automotive MOSFET Gate Driving |
|---|---|
|
Use Scenario: Step-down converter in 48 V mild-hybrid vehicle systems converting to 12 V for auxiliary loads. IC Role / Device Role / Timing Role: Primary high-side switch controlling energy transfer into output inductor; operates at 200–500 kHz PWM. Use Value: 200 mV VCEsat limits conduction loss to <100 mW at 1 A, reducing thermal load and enabling compact heatsinking. |
Use Scenario: Level-shifting and current-boosting stage driving high-threshold SiC MOSFET gates in traction inverter pre-driver circuits. IC Role / Device Role / Timing Role: NPN emitter-follower configured as active pull-up switch for fast gate turn-on with low impedance path. Use Value: Dual-collector SOT223 package delivers 1.4 W dissipation margin, sustaining 100 mA peak gate charge current without derating. |
| High-Voltage Motor Control | Automotive HVAC Blower Switching |
|
Use Scenario: Discrete half-bridge leg in 24–48 V brushed DC motor control for power steering assist or cooling fans. IC Role / Device Role / Timing Role: Low-side switching element commutating motor current; handles repetitive 1 A pulses with 3 A peak capability. Use Value: 3 A ICM rating and 150 °C Tj max allow robust operation during stall or overload events without latch-up. |
Use Scenario: On/off power switch for 48 V HVAC blower motors in commercial vehicles, controlled via CAN-linked ECU. IC Role / Device Role / Timing Role: Final-stage discrete switch interfacing between low-power MCU GPIO and high-current motor load. Use Value: AEC-Q101 qualification and -40 °C to +150 °C operation ensure reliability across extreme under-hood temperature cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NSS12201LT1G | VCEO = 100 V, IC = 1.2 A, VCEsat = 220 mV @ 1 A, SOT23-3 package (no dual collector) | Limited thermal capacity (0.5 W Ptot) and single-collector layout reduce suitability for sustained 1 A loads. | Select only for space-constrained, low-duty-cycle applications where PCB copper area is unavailable. |
| Diodes Incorporated DXTN10100J-13 | VCEO = 100 V, IC = 1 A, VCEsat = 250 mV @ 1 A, SOT223 package, AEC-Q101 qualified | Higher VCEsat increases conduction loss by ~25%, requiring larger heatsink area to match PBSS8110Z thermal performance. | Acceptable for cost-sensitive automotive designs where 50 mV higher saturation voltage is tolerable. |
Compared with NSS12201LT1G and DXTN10100J-13, PBSS8110Z,135 delivers superior thermal management via dual-collector SOT223 and lowest VCEsat, making it optimal for high-reliability, thermally constrained 1 A switching in automotive power stages.
Availability
PBSS8110Z,135 is available at Aetrix Electronics and suitable for automotive power conversion, high-voltage motor control, and MOSFET gate driving applications requiring stable component supply and AEC-Q101 compliance.
Supply support for PBSS8110Z,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and automotive-grade quality.
PBSS8110Z,135 belongs to Nexperia's low VCEsat transistor family engineered specifically for high-efficiency, high-voltage switching in automotive and industrial power management systems.
FAQ
What is the maximum continuous collector current for PBSS8110Z,135 at 100 °C ambient?
At Tamb = 100 °C, the PBSS8110Z,135 must be derated per its thermal curves: with a 6 cm² copper pad, Ptot drops to ~0.6 W. Using RCEsat = 200 mΩ, the corresponding IC limit is approximately 1.73 A (since P = I²R), but absolute maximum IC remains 1 A per limiting values - thus continuous operation is capped at 1 A regardless of ambient, with pulse current up to 3 A allowed for tp ≤ 1 ms.
Can PBSS8110Z,135 replace a standard general-purpose NPN transistor like BC817 in high-current applications?
No - while electrically pin-compatible in SOT223 footprint, PBSS8110Z,135 is optimized for low-saturation operation at high current (1 A), whereas BC817 is rated for only 500 mA and has VCEsat > 500 mV at that level. Substituting without redesign risks thermal runaway, excessive power loss, and premature failure due to mismatched RCEsat and thermal capability.
Is the marking code 'PB8110' sufficient to identify PBSS8110Z,135 on the physical device?
Yes - per Table 4 of the datasheet, PBSS8110Z is marked as 'PB8110' on the top surface of the SOT223 package. This 4-character laser marking is unique to this part number within Nexperia's low VCEsat portfolio and matches ordering code PBSS8110Z,135 used for tape-and-reel delivery.
Does PBSS8110Z,135 support parallel operation for higher current handling?
Not recommended without external balancing - although it has dual collector pins, the device lacks built-in emitter ballasting or matched hFE binning for paralleling. Uneven current sharing between units can occur due to parameter spread (e.g., ±20% hFE, ±25% VCEsat). For >1 A continuous, use a single PBSS8110Z,135 with adequate PCB copper, not multiple devices.
PBSS8110Z,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 250mA, 10V
- Power - Max:
- 1.4 W
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
PBSS8110Z,135 FAQ
1.How can I place an order for PBSS8110Z,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS8110Z,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS8110Z,135 reliable?
The price and inventory of PBSS8110Z,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS8110Z,135 is usually 5 days.
3.What payment methods are accepted for PBSS8110Z,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS8110Z,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS8110Z,135?
PBSS8110Z,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS8110Z,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS8110Z,135?
For technical support, including PBSS8110Z,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS8110Z,135 requirements.
6.How does Aetrix verify that PBSS8110Z,135 is sourced from the original manufacturer or authorized distributors?
All PBSS8110Z,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS8110Z,135 meets industry standards.
7.What is the process for return or replacement of PBSS8110Z,135?
All PBSS8110Z,135 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS8110Z,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS8110Z,135 part is unused and in its original packaging.
Return procedure for PBSS8110Z,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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