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Nexperia USA Inc. PBSS8510PA,115
- Part No.:
- PBSS8510PA,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- 3-PowerUDFN
- Datasheet:
-
PBSS8510PA,115.pdf
- Description:
- TRANS NPN 100V 5.2A 3HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:13,871
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Product details
Overview
PBSS8510PA from Nexperia is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless SOT1061 (HUSON3) package, rated for 100 V VCEO, 5.2 A continuous collector current, and 48–65 mΩ RCEsat at IC = 5.2 A / IB = 260 mA. It serves as a high-efficiency medium-power switch in battery-driven loadswitch and charging circuits.
For engineers reviewing the PBSS8510PA datasheet, PBSS8510PA pinout, PBSS8510PA application, or PBSS8510PA equivalent, this device is selected for low-loss switching where thermal performance on FR4 PCBs and compact board area are critical - especially when replacing conventional SOT23/SOT223 transistors with higher saturation voltage.
Technical Context
This BISS transistor uses a proprietary epitaxial structure to achieve ultra-low VCEsat while maintaining high breakdown voltage and robust switching speed. Its base-emitter turn-on voltage is 0.77–0.9 V at IC = 2 A, and it delivers fT = 95–150 MHz at VCE = 10 V / IC = 100 mA.
Thermal resistance varies significantly with PCB layout: Rth(j-a) ranges from 60 K/W (ceramic PCB, Al2O3) to 250 K/W (standard FR4), enabling scalable power handling from 1 W to 2.1 W depending on copper pad area and substrate choice.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - supports switching in 48 V industrial bus and 24 V automotive auxiliary systems without derating. |
| IC | 5.2 A continuous - enables direct drive of small motors, fans, or LED arrays without external gate drivers. |
| RCEsat | 48–65 mΩ at IC = 5.2 A - reduces conduction loss to ≤1.7 W at full load, improving efficiency over standard MOSFETs in low-VGS bias scenarios. |
| fT | 95–150 MHz - ensures stable operation in PWM frequencies up to 500 kHz with minimal phase lag in feedback-controlled power stages. |
| toff | 965 ns - enables fast turn-off for precise pulse-width control in battery protection and charging IC interfaces. |
| Ptot | 2.1 W on ceramic PCB - allows sustained operation at ambient temperatures up to +125 °C in sealed enclosures with minimal heatsinking. |
| Cc | 16.5–20 pF - minimizes capacitive loading on driving logic, reducing EMI in densely routed DC-DC converter PCBs. |
Pinout & Package
The PBSS8510PA is housed in a thermally enhanced, leadless HUSON3 (SOT1061) plastic package measuring 2.0 × 2.0 × 0.65 mm, featuring an exposed collector pad for direct thermal coupling to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input requiring ~260 mA base drive for full saturation at 5.2 A; compatible with 3.3 V/5 V logic-level microcontrollers via series resistor. |
| 2 | Emitter | Reference node for current sensing and ground-return path; internally tied to substrate for low-inductance emitter connection. |
| 3 | Collector | Power output terminal with exposed metal pad - must be soldered to ≥1 cm² copper pour for rated 1.4 W dissipation on FR4. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RCEsat | 48–65 mΩ enables <1.7 W conduction loss at 5.2 A, reducing thermal stress vs. standard bipolar transistors by >40%. |
| Exposed collector pad | Direct thermal interface to PCB copper improves heat transfer efficiency - Rth(j-a) drops from 250 K/W (standard FR4) to 60 K/W (ceramic). |
| Medium-power SMD footprint | 2.0 × 2.0 mm body occupies 75% less PCB area than SOT223, enabling high-density power management layouts. |
| High fT and fast switching | 150 MHz fT and 965 ns toff support clean edge transitions in 200–500 kHz PWM applications without snubbers. |
Applications
| Load Switching | Battery Charging Control |
|---|---|
Use Scenario: High-side switching of 12–48 V loads in portable test equipment and IoT gateways. IC Role / Device Role / Timing Role: NPN BISS transistor configured as saturated switch, driven directly by MCU GPIO with 260 mA base current. Use Value: 48 mΩ RCEsat limits voltage drop to ≤250 mV at 5.2 A, preserving >95% supply rail efficiency under full load. | Use Scenario: Constant-current regulation in USB-C PD 3.0 compliant chargers for laptops and power banks. IC Role / Device Role / Timing Role: Low-loss pass element in linear or hybrid charge-path topology, controlled by analog feedback loop. Use Value: VBEsat = 1.0–1.1 V at 5.2 A ensures predictable base drive requirements and stable current setpoint accuracy. |
| Motor/Fan Drive | Power Management |
Use Scenario: Driving 24 V DC brush motors in HVAC actuators and industrial valves. IC Role / Device Role / Timing Role: Medium-power switching element in half-bridge or single-ended driver stage, operating at 20–100 kHz PWM. Use Value: 965 ns toff and 270 ns ton minimize dead-time losses and prevent shoot-through in synchronous rectification schemes. | Use Scenario: Secondary-side power switch in isolated DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: High-voltage, high-current switch interfacing with optocoupler-isolated gate driver signals. Use Value: 100 V VCEO rating provides 2× margin over 48 V nominal bus, ensuring reliability during line transients and load dumps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PBSS8110PA | Lower VCEO (60 V), lower IC (3.5 A), higher RCEsat (70–95 mΩ) | Suitable only for ≤24 V systems; limited to 3.5 A continuous loads | Select when board space is identical but voltage/current demands are reduced - no PCB redesign needed. |
| DMT6009LPS | 60 V N-channel MOSFET, 9.5 mΩ RDS(on), requires 4.5 V gate drive | No base current needed, but gate drive circuitry adds complexity in low-voltage logic environments | Prefer for high-frequency (>1 MHz) switching where gate charge dominates losses; avoid if driving from 3.3 V MCU without level shift. |
Compared with PBSS8510PA, PBSS8110PA trades voltage/current headroom for cost reduction in 24 V applications, while DMT6009LPS shifts design burden to gate drive but achieves lower conduction loss above 1 A - making PBSS8510PA optimal for 3.3–5 V logic-driven, 48 V–5.2 A medium-power switching where simplicity and thermal robustness are prioritized.
Availability
PBSS8510PA is available at Aetrix Electronics and suitable for loadswitching, battery charging control, and motor/fan drive applications requiring stable component supply across industrial, computing, and consumer electronics programs.
Supply support for PBSS8510PA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, spun off from NXP's Standard Products division in 2017 and focused on high-volume, high-reliability components for automotive, industrial, and consumer markets.
PBSS8510PA belongs to Nexperia's BISS transistor product line, engineered specifically for high-efficiency, medium-power switching in space-constrained applications where low VCEsat and thermal performance on standard PCBs are critical.
FAQ
What is the maximum allowable base current for continuous operation?
The absolute maximum base current is 600 mA per datasheet limiting values. For reliable long-term operation at 5.2 A collector current, Nexperia specifies 260 mA base drive - exceeding this risks thermal runaway due to β degradation at elevated junction temperatures.
Can PBSS8510PA replace a MOSFET in 5 V logic-driven switching applications?
Yes - its 0.77–0.9 V VBEon enables direct drive from 3.3 V or 5 V MCUs without level-shifting circuitry. Unlike MOSFETs requiring ≥4.5 V gate drive for low RDS(on), PBSS8510PA achieves 48 mΩ RCEsat with only 260 mA base current, simplifying drive design.
How does PCB layout affect thermal performance?
Thermal resistance varies from 60 K/W (ceramic PCB) to 250 K/W (standard FR4). Using a 6 cm² copper pad under the exposed collector reduces Rth(j-a) to 90 K/W, enabling 1.4 W dissipation at Tamb = 25 °C - versus only 500 mW with no added copper.
Is PBSS8510PA automotive-qualified?
No - this device is not AEC-Q101 qualified or tested to automotive standards. It is intended for industrial, computing, and consumer applications. For automotive use, Nexperia offers the pin-compatible PBSS8510PAS variant with full AEC-Q101 qualification and extended temperature validation.
PBSS8510PA,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 5.2 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 340mV @ 260mA, 5.2A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 95 @ 2A, 2V
- Power - Max:
- 2.1 W
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-HUSON (2x2)
PBSS8510PA,115 FAQ
1.How can I place an order for PBSS8510PA,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS8510PA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS8510PA,115 reliable?
The price and inventory of PBSS8510PA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS8510PA,115 is usually 5 days.
3.What payment methods are accepted for PBSS8510PA,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS8510PA,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS8510PA,115?
PBSS8510PA,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS8510PA,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS8510PA,115?
For technical support, including PBSS8510PA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS8510PA,115 requirements.
6.How does Aetrix verify that PBSS8510PA,115 is sourced from the original manufacturer or authorized distributors?
All PBSS8510PA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS8510PA,115 meets industry standards.
7.What is the process for return or replacement of PBSS8510PA,115?
All PBSS8510PA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS8510PA,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS8510PA,115 part is unused and in its original packaging.
Return procedure for PBSS8510PA,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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