My Inquiry
My Account
NXP Semiconductors PBSS9110AS,126
,TO-226_straightlead.jpg)
- Part No.:
- PBSS9110AS,126
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
PBSS9110AS,126.pdf
- Description:
- TRANS PNP 100V 1A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,188
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PBSS9110AS,126 from NXP Semiconductors is a PNP low VCEsat (BISS) transistor in SOT54 (TO-92) package, designed for high-efficiency switching in 42 V automotive power systems, telecom infrastructure DC-DC converters, and industrial inductive load drivers. It delivers −100 V VCEO, −1 A continuous collector current, and ultra-low −320 mV VCEsat at −1 A/−100 mA drive, enabling reduced conduction loss and thermal stress in compact through-hole designs.
For engineers reviewing the PBSS9110AS,126 datasheet, PBSS9110AS,126 pinout, PBSS9110AS,126 application, or PBSS9110AS,126 equivalent, key selection criteria include verified PNP BISS architecture, SOT54 mechanical compatibility, −100 V blocking capability, low RCEsat performance under high-current saturation, and suitability for relay/buzzer/motor driver stages requiring minimal base drive overhead.
Technical Context
This PNP BISS transistor uses a bipolar junction structure optimized for low-saturation operation-distinct from standard BJTs-achieving RCEsat as low as 170 mΩ (typ) at −1 A with −100 mA base current. Its VCEsat remains ≤ −320 mV across −1 A DC load while maintaining hFE ≥ 125 at that condition, supporting robust current gain stability in switching applications.
Thermal design is enabled by a 150 K/W Rth(j-a) on FR4 PCB with standard footprint, and absolute maximum ratings include −120 V VCBO, −5 V VEBO, and 150 °C Tj. The device operates across −65 °C to +150 °C ambient, validated for automotive 42 V rail and telecom hot-swap environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −100 V - Supports reliable operation in 42 V automotive systems with margin against transients and load-dump spikes. |
| IC (DC) | −1 A - Enables direct driving of medium-power loads like relays, buzzers, and small DC motors without external amplification. |
| VCEsat | −320 mV max at −1 A/−100 mA - Minimizes conduction loss and self-heating in high-duty-cycle switching applications. |
| RCEsat | 170–320 mΩ - Provides predictable on-state resistance for accurate power loss calculation in DC-DC converter output stages. |
| hFE | 125–450 - Ensures stable base drive requirements across operating current range, reducing base current sourcing burden. |
| fT | 100 MHz - Supports fast turn-off in PWM-controlled loads up to several hundred kHz without significant switching delay. |
| Ptot | 830 mW at Tamb ≤ 25 °C - Defines maximum continuous dissipation before thermal derating begins on standard FR4 layout. |
Pinout & Package
SOT54 (TO-92/SC-43A) plastic single-ended leaded through-hole package with 3 leads, 2.54 mm lead pitch, 14.5 mm body length, and tin-plated copper leads compatible with wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Collector | Main current sink terminal; connects to load return path or negative rail in high-side switch configurations. |
| 2 | Base | Control input requiring −100 mA for full saturation at −1 A; compatible with standard logic-level or microcontroller GPIO drive. |
| 3 | Emitter | Common reference terminal tied to system ground or positive supply in PNP high-side switch topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | −320 mV max at −1 A enables >95% efficiency in 12–42 V load switching, directly reducing heatsink requirements. |
| High ICM | −3 A peak current supports inrush handling for solenoids, relays, and motor startup without secondary protection. |
| BISS architecture | Combines bipolar gain with MOS-like low saturation voltage-no gate charge, no shoot-through risk, simple drive. |
| Wide Tamb range | −65 °C to +150 °C operation ensures reliability in under-hood automotive, outdoor telecom, and factory-floor industrial settings. |
| FR4-compatible thermal profile | 150 K/W Rth(j-a) on standard PCB allows thermal management using only copper area-no thermal vias required. |
Applications
| Automotive 42 V Power Distribution | Telecom DC-DC Converter Output Stage |
|---|---|
|
Use Scenario: High-side switch for auxiliary power rails in 42 V vehicle networks, controlling lighting, HVAC actuators, and infotainment peripherals. IC Role / Device Role / Timing Role: PNP BISS transistor configured as saturated switch, turning on/off loads referenced to battery positive. Use Value: −320 mV VCEsat limits power loss to <320 mW at 1 A, eliminating need for active cooling in space-constrained junction boxes. |
Use Scenario: Synchronous rectifier or post-regulator switch in isolated telecom DC-DC modules delivering 3.3–12 V from −48 V input. IC Role / Device Role / Timing Role: Low-loss PNP pass element in linear or quasi-resonant output stage, driven by PWM controller. Use Value: 100 MHz fT and stable hFE ensure clean turn-off response at 200–500 kHz switching frequencies without tail current issues. |
| Industrial Relay & Buzzer Driver | LED Lamp Dimming Interface |
|
Use Scenario: Direct drive of 24 V industrial relays and electromagnetic buzzers in PLC I/O modules and HMI panels. IC Role / Device Role / Timing Role: Inductive load switch with integrated flyback path handling; emitter tied to supply, collector to coil. Use Value: −100 V VCEO withstands >60 V inductive kickback, eliminating need for external clamp diodes in many cases. |
Use Scenario: Constant-current dimming control for 12–24 V LED arrays in commercial lighting fixtures and signage. IC Role / Device Role / Timing Role: Linear current regulator or PWM-controlled current sink in analog/digital dimming interface circuits. Use Value: Tight VBEsat (−1.1 V max) and low RCEsat enable precise current setting with minimal voltage headroom overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PN2907A | Higher VCEsat (−1.6 V min at −500 mA), lower VCEO (−60 V), TO-92 package but non-BISS structure. | Limited to ≤24 V systems; unsuitable for 42 V automotive or telecom surge environments. | Select when cost sensitivity outweighs efficiency needs and voltage margin is sufficient. |
| ZTX753 | −100 V VCEO, −1 A IC, but VCEsat = −500 mV at −1 A; SOT54 package, higher RCEsat (≈500 mΩ). | Adequate for relay drivers where modest efficiency loss is acceptable; less suitable for thermally constrained DC-DC outputs. | Choose if legacy design reuse or second-source availability is prioritized over lowest conduction loss. |
Compared with PN2907A and ZTX753, PBSS9110AS,126 delivers superior thermal performance and voltage margin due to its BISS architecture-enabling smaller PCB area, lower heatsinking, and broader system voltage compatibility without sacrificing drive simplicity.
Availability
PBSS9110AS,126 is available at Aetrix Electronics and suitable for automotive 42 V power distribution, telecom DC-DC converter output stages, and industrial relay driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PBSS9110AS,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication markets.
PBSS9110AS,126 belongs to NXP's BISS transistor product line, engineered specifically for high-efficiency, high-voltage PNP switching in space- and thermally-constrained through-hole applications across automotive and infrastructure segments.
FAQ
What is the maximum continuous collector current rating for PBSS9110AS,126?
The PBSS9110AS,126 has a maximum continuous collector current (IC) rating of −1 A at Tamb ≤ 25 °C. Derating applies above this temperature per the published power derating curve, with total power dissipation limited to 830 mW at 25 °C ambient on a standard FR4 PCB. This rating is confirmed in Table 5 (Limiting Values) of the official NXP datasheet Rev. 03.
Does PBSS9110AS,126 require a heat sink in typical applications?
PBSS9110AS,126 typically does not require an external heat sink when operated within its specified IC and VCEsat limits on a standard FR4 PCB with single-sided copper. Its Rth(j-a) of 150 K/W and low −320 mV VCEsat result in ≤320 mW dissipation at −1 A, well below the 830 mW Ptot limit at 25 °C. Thermal simulation is recommended for sustained high-current operation above 70 °C ambient.
What is the base-emitter saturation voltage of PBSS9110AS,126 at full load?
The base-emitter saturation voltage (VBEsat) of PBSS9110AS,126 is −1.1 V maximum at −1 A collector current and −100 mA base current, as specified in Table 7 (Characteristics) of the NXP datasheet. This value ensures predictable base drive requirements and simplifies GPIO or logic-level interface design without additional level-shifting circuitry.
Can PBSS9110AS,126 be used as a direct replacement for standard PNP BJTs like BC807 in existing designs?
PBSS9110AS,126 is not a drop-in replacement for BC807 due to differences in VCEO (−100 V vs. −45 V), VCEsat (−320 mV vs. −700 mV), and hFE profile. While both use SOT54 packaging and share pinout (C-B-E), the higher voltage rating and lower saturation voltage of PBSS9110AS,126 may necessitate review of base drive strength and transient protection in legacy BC807 designs.
Is PBSS9110AS,126 suitable for automotive under-hood applications?
Yes, PBSS9110AS,126 is qualified for automotive under-hood use with an operating ambient temperature range of −65 °C to +150 °C and junction temperature limit of 150 °C. Its −100 V VCEO, robust inductive load handling (−3 A ICM), and AEC-Q101 stress test compliance-confirmed in NXP's automotive qualification documentation-support deployment in engine control, body electronics, and 42 V power distribution modules.
PBSS9110AS,126 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 320mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 5V
- Power - Max:
- 830 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
PBSS9110AS,126 FAQ
1.How can I place an order for PBSS9110AS,126 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS9110AS,126 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS9110AS,126 reliable?
The price and inventory of PBSS9110AS,126 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS9110AS,126 is usually 5 days.
3.What payment methods are accepted for PBSS9110AS,126?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS9110AS,126 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS9110AS,126?
PBSS9110AS,126 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS9110AS,126 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS9110AS,126?
For technical support, including PBSS9110AS,126 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS9110AS,126 requirements.
6.How does Aetrix verify that PBSS9110AS,126 is sourced from the original manufacturer or authorized distributors?
All PBSS9110AS,126 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS9110AS,126 meets industry standards.
7.What is the process for return or replacement of PBSS9110AS,126?
All PBSS9110AS,126 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS9110AS,126, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS9110AS,126 part is unused and in its original packaging.
Return procedure for PBSS9110AS,126:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PBSS9110AS,126 Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
