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NXP Semiconductors PBSS9110S,126
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- Part No.:
- PBSS9110S,126
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
PBSS9110S,126.pdf
- Description:
- TRANS PNP 100V 1A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,338
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Product details
Overview
PBSS9110S,126 from NXP Semiconductors is a PNP low VCEsat bipolar transistor in SOT54 (TO-92) package, designed for high-efficiency switching in 42 V automotive power systems, telecom infrastructure DC-DC converters, and industrial inductive load drivers. It delivers −100 V VCEO, −1 A continuous collector current, −320 mV VCEsat at −1 A/−100 mA drive, 170–320 mΩ RCEsat, and 125–450 hFE across operating range.
For engineers reviewing the PBSS9110S,126 datasheet, PBSS9110S,126 pinout, PBSS9110S,126 application, or PBSS9110S,126 equivalent, this page provides verified electrical parameters, thermal derating behavior, base-emitter saturation characteristics, and validated alternatives for relay, LED, and motor driver designs requiring low-loss PNP switching under constrained thermal conditions.
Technical Context
The PBSS9110S,126 is a BISS (Bipolar Integrated Switch) PNP transistor optimized for low-saturation operation in high-current, medium-voltage switching applications. Its architecture supports IC/IB = 10 to 50 drive ratios with stable hFE ≥125 at −1 A, enabling efficient base drive design without external amplification.
It operates with −1.1 V VBEsat at −1 A/−100 mA and exhibits <17 pF Cc at −10 V VCB, supporting fast turn-off in PWM-controlled DC-DC stages. Thermal resistance Rth(j-a) is 150 K/W on FR4 PCB with standard footprint, defining its power handling limit at ambient temperatures up to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −100 V - Maximum blocking voltage between collector and emitter with open base; enables use in 42 V automotive systems with safety margin. |
| IC (DC) | −1 A - Continuous collector current rating; supports sustained lamp, relay, and small-motor loads without forced cooling. |
| VCEsat | −320 mV max at −1 A/−100 mA - Low saturation voltage minimizes conduction loss and heat generation in high-duty-cycle switches. |
| RCEsat | 170–320 mΩ - Equivalent on-resistance directly determines I²R losses; critical for thermal management in compact layouts. |
| hFE | 125–450 - DC current gain varies with current and temperature; supports flexible base drive design from light to full-load conditions. |
| fT | 100 MHz - Transition frequency confirms suitability for PWM frequencies up to several MHz in DC-DC control loops. |
| Tj max | 150 °C - Maximum junction temperature defines safe operating area boundaries when combined with Rth(j-a) = 150 K/W. |
Pinout & Package
SOT54 (TO-92/SC-43A) plastic single-ended leaded through-hole package with 3 leads, 2.54 mm lead pitch, 14.5 mm body length, and standard FR4-mounting footprint. Designed for manual or wave-solder assembly with tin-plated copper traces.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input terminal; requires −100 mA drive for full saturation at −1 A collector current. |
| 2 | Collector | High-side switched node; connects to positive rail in high-side PNP switch configurations. |
| 3 | Emitter | Common reference terminal; tied to system ground or load return path in typical low-side referenced circuits. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | −320 mV max at rated current reduces power dissipation by >40% vs. standard PNP transistors, lowering heatsink requirements. |
| High IC/ICM | −1 A DC / −3 A peak rating supports surge-tolerant operation in relay coil and motor startup scenarios. |
| BISS architecture | Integrated structure improves hFE consistency and switching speed over conventional PNP devices, easing gate/base driver design. |
| Thermal robustness | 150 °C Tj max and defined Rth(j-a) allow reliable operation in under-hood automotive and industrial enclosures without active cooling. |
Applications
| Automotive 42 V Power Distribution | Telecom DC-DC Converter |
|---|---|
|
Use Scenario: High-side switch for auxiliary power rails in 42 V vehicle networks, controlling lighting, HVAC actuators, and infotainment modules. IC Role / Device Role / Timing Role: PNP switching element providing load isolation and reverse-polarity protection in centralized power distribution units. Use Value: −100 V VCEO and −320 mV VCEsat ensure safe operation during load dump transients while minimizing voltage drop and self-heating. |
Use Scenario: Synchronous rectifier or main switch in isolated flyback or forward converter stages powering line cards and baseband processors. IC Role / Device Role / Timing Role: Medium-voltage PNP switch operating in hard-switched or quasi-resonant topologies with fixed-frequency PWM control. Use Value: 100 MHz fT and low Cc support clean turn-off edges; RCEsat ≤320 mΩ limits conduction loss at 500 kHz–1 MHz switching frequencies. |
| Industrial Relay Driver | LED/Lamp Load Control |
|
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules and factory automation controllers where space and thermal budget are constrained. IC Role / Device Role / Timing Role: Inductive load switch with integrated flyback energy handling via external diode; configured as high-side driver with base resistor network. Use Value: −3 A ICM withstands relay coil inrush; −1.1 V VBEsat ensures predictable base drive current and avoids driver saturation. |
Use Scenario: Constant-current dimming control for high-brightness LEDs and incandescent lamps in building controls and signage systems. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink/source in analog-dimming or digital-addressable lighting interfaces. Use Value: Stable hFE ≥125 at −1 A enables precise current regulation with minimal base current variation across temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC807-40,115 | Lower VCEO (−45 V), lower IC (−500 mA), higher VCEsat (−700 mV typ), SOT23 package | Not suitable for 42 V automotive or 100 V telecom bus; limited to ≤24 V industrial logic-level loads | Select only for space-constrained PCBs where voltage/current demands are ≤50% of PBSS9110S,126 ratings. |
| MMBT4403LT1G | Same VCEO (−40 V), lower IC (−600 mA), higher VCEsat (−750 mV typ), SOT23 package | Cannot replace PBSS9110S,126 in 42 V or 1 A applications; lacks BISS efficiency and thermal capability | Use only in legacy designs with existing SOT23 footprints and sub-0.6 A load requirements. |
Compared with BC807-40,115 and MMBT4403LT1G, the PBSS9110S,126 delivers 2.2× higher voltage rating, 1.7× higher current capacity, and 57% lower saturation voltage-enabling smaller heatsinks, higher efficiency, and direct compatibility with 42 V automotive architectures without redesign.
Availability
PBSS9110S,126 is available at Aetrix Electronics and suitable for automotive 42 V power distribution, telecom DC-DC converters, and industrial relay driver applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PBSS9110S,126 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and communication markets.
The PBSS9110S,126 belongs to NXP's BISS PNP transistor product line, engineered specifically for high-efficiency, medium-voltage switching in automotive power distribution, telecom infrastructure, and industrial control systems where low VCEsat and thermal robustness are critical.
FAQ
What is the maximum continuous collector current rating for PBSS9110S,126?
The PBSS9110S,126 has a maximum continuous collector current (IC) rating of −1 A at Tamb ≤25 °C. Derating applies above 25 °C per the published power derating curve, with total power dissipation dropping to zero at 150 °C ambient. This rating is confirmed in Table 5 of the NXP datasheet Rev. 03.
Does PBSS9110S,126 support high-side switching configurations?
Yes, PBSS9110S,126 is a PNP transistor with collector as the high-side switched node (Pin 2) and emitter as the common reference (Pin 3), making it inherently suited for high-side switching in 42 V automotive and industrial power rails. Its −100 V VCEO rating ensures safe operation during load dump events.
What is the typical base-emitter saturation voltage for PBSS9110S,126 at full load?
The typical base-emitter saturation voltage (VBEsat) for PBSS9110S,126 is −1.1 V at −1 A collector current and −100 mA base current, as specified in Table 7 of the NXP datasheet. This value is critical for calculating required base drive resistor values in fixed-bias applications.
Can PBSS9110S,126 be used in DC-DC converter synchronous rectification?
Yes, PBSS9110S,126 is suitable for low-frequency synchronous rectification in flyback or forward converters due to its −320 mV VCEsat, 100 MHz fT, and low 17 pF collector capacitance. However, it is not recommended for >500 kHz operation without gate/base drive optimization, as its BISS architecture prioritizes conduction efficiency over ultrafast switching.
Is PBSS9110S,126 RoHS compliant and halogen-free?
Yes, PBSS9110S,126 is RoHS compliant and halogen-free per NXP's product compliance documentation. The "126" suffix indicates tape-and-reel packaging per JEDEC standard, and the device meets EU Directive 2011/65/EU and IEC 61249-2-21 requirements as confirmed in NXP's official material declarations.
PBSS9110S,126 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 320mV @ 100mA, 1A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 150 @ 500mA, 5V
- Power - Max:
- 830 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
PBSS9110S,126 FAQ
1.How can I place an order for PBSS9110S,126 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS9110S,126 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PBSS9110S,126 reliable?
The price and inventory of PBSS9110S,126 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS9110S,126 is usually 5 days.
3.What payment methods are accepted for PBSS9110S,126?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS9110S,126 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PBSS9110S,126?
PBSS9110S,126 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PBSS9110S,126 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PBSS9110S,126?
For technical support, including PBSS9110S,126 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS9110S,126 requirements.
6.How does Aetrix verify that PBSS9110S,126 is sourced from the original manufacturer or authorized distributors?
All PBSS9110S,126 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS9110S,126 meets industry standards.
7.What is the process for return or replacement of PBSS9110S,126?
All PBSS9110S,126 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS9110S,126, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS9110S,126 part is unused and in its original packaging.
Return procedure for PBSS9110S,126:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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