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Nexperia USA Inc. PBSS9110T,215

Part No.:
PBSS9110T,215
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPBSS9110T,215.pdf
Description:
TRANS PNP 100V 1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:17,462

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Product details

Overview

PBSS9110T,215 from Nexperia is a PNP low-VCEsat transistor in SOT23 package, designed for high-efficiency switching in low-voltage, high-current applications. It delivers VCEsat = 320 mV at IC = −1 A / IB = −100 mA, supports VCEO = −100 V and IC = −1 A continuous, and operates across −65 °C to +150 °C ambient range - used in relay drivers, LED/lamp control, and 42 V automotive power modules.

For engineers reviewing the PBSS9110T,215 datasheet, PBSS9110T,215 pinout, PBSS9110T,215 application, or PBSS9110T,215 equivalent, key selection criteria include verified RCEsat (170–320 mΩ), hFE ≥ 125 at IC = −1 A, thermal resistance (260 K/W with 1 cm² collector pad), and SOT23 footprint compatibility with standard reflow profiles.

Technical Context

This PNP bipolar junction transistor uses epitaxial base technology to achieve low saturation voltage and high current gain. Its structure enables stable operation under pulsed conditions (tp ≤ 300 µs, duty δ ≤ 0.02) and supports high peak currents up to −3 A without thermal runaway.

It features low leakage (ICBO ≤ −100 nA at 25 °C), robust breakdown ratings (VCBO = −120 V, VEBO = −5 V), and fT = 100 MHz - confirming suitability for medium-speed switching rather than RF or linear amplification.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −100 V - Withstands 42 V automotive system transients and DC/DC converter flyback voltages without breakdown.
IC −1 A continuous - Supports direct driving of lamps, buzzers, and small relays without external current boosting.
VCEsat ≤ 320 mV at IC = −1 A / IB = −100 mA - Reduces conduction loss and heat generation in compact PCB layouts.
hFE ≥ 125 at IC = −1 A - Enables efficient base drive with minimal controller GPIO current (e.g., <100 mA from MCU).
RCEsat 170–320 mΩ - Provides predictable on-resistance for thermal modeling and power loss calculation in driver stages.
Ptot 480 mW with 1 cm² collector pad - Defines maximum dissipation under derated ambient conditions (e.g., 80 mW at 100 °C).
fT 100 MHz - Confirms capability for switching frequencies up to ~10 MHz with acceptable gain margin.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, tin-plated terminations compatible with IPC-J-STD-020 reflow profiles.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input requiring −100 mA base current to saturate at −1 A collector load; referenced to emitter potential.
2 Emitter (E) Common return node for PNP configuration; connects to positive rail in high-side switch topologies.
3 Collector (C) Switched output terminal; carries full load current and requires thermal pad connection for >200 mW dissipation.

Key Features

Feature Design Value
Low VCEsat 320 mV max at full rated current - cuts conduction loss by >40% vs. standard PNP transistors, reducing heatsink need.
High hFE ≥125 at IC = −1 A - allows direct MCU GPIO drive without base resistors exceeding 10 kΩ in most cases.
Robust VCBO −120 V - ensures immunity to inductive kickback in relay/motor loads without snubber circuits.
Thermal performance Rth(j-a) = 260 K/W with 1 cm² copper pad - enables 480 mW operation at 25 °C ambient, critical for space-constrained designs.
Pulsed current rating ICM = −3 A - supports short-duration surge loads (e.g., lamp inrush, solenoid pull-in) without degradation.

Applications

Automotive 42 V Power DC/DC Converter Driver

Use Scenario: Switching control of auxiliary loads (e.g., HVAC actuators, seat heaters) in 42 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: High-side PNP switch enabling ground-referenced load control with fast turn-on/turn-off timing (ton/toff < 100 ns typical).

Use Value: −100 V VCEO withstands load dump transients; low VCEsat minimizes power loss in thermally constrained junction boxes.

Use Scenario: Active clamping or synchronous rectification in isolated flyback or forward converters operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Low-loss switching element in secondary-side regulation stage, driven by transformer-coupled gate signal.

Use Value: 100 MHz fT supports clean switching edge integrity; RCEsat stability over temperature ensures consistent efficiency across −40 to +125 °C.

Inductive Load Driver LED/Lamp Peripheral Driver

Use Scenario: Driving 12 V relays, buzzer coils, and small DC motors in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Saturated-switch PNP transistor providing galvanically isolated load control via optocoupler or logic-level interface.

Use Value: −3 A ICM handles relay coil inrush; VEBO = −5 V prevents base-emitter reverse breakdown during flyback events.

Use Scenario: Constant-current dimming and on/off control of automotive interior lamps and status LEDs in dashboard clusters.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink/source switch interfacing directly with microcontroller GPIO pins.

Use Value: hFE ≥ 125 ensures full saturation with ≤100 mA base drive; SOT23 footprint enables dense LED matrix routing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MMBT3906LT1G VCEsat = 400 mV @ IC = −100 mA; lower IC rating (−200 mA); no specified RCEsat. Limited to sub-100 mA loads; unsuitable for relay or lamp drivers requiring >500 mA. Select only for low-current signal inversion where VCEsat tolerance >300 mV is acceptable.
DMT3005LPS-7 PNP MOSFET (not BJT); VGS(th) = −1.5 V; RDS(on) = 450 mΩ @ VGS = −4.5 V; no hFE dependency. Eliminates base current but requires negative gate drive; slower switching than BJT at same voltage. Prefer when gate drive is available and zero base current is mandatory; avoid if using simple resistor-based MCU drive.

Compared with MMBT3906LT1G and DMT3005LPS-7, PBSS9110T,215 uniquely balances high current (−1 A), ultra-low VCEsat, and BJT simplicity - making it optimal for cost-sensitive, thermally constrained PNP switching where base drive current is available and MOSFET gate complexity is undesirable.

Availability

PBSS9110T,215 is available at Aetrix Electronics and suitable for automotive 42 V power modules, industrial relay drivers, and telecom DC/DC converter designs requiring stable component supply and long-term manufacturability.

Supply support for PBSS9110T,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process innovation and automotive-grade quality systems.

PBSS9110T,215 belongs to Nexperia's low-VCEsat BJT portfolio, engineered specifically for energy-efficient switching in automotive, industrial, and telecom power management where thermal density and conduction loss are critical constraints.

FAQ

Is PBSS9110T,215 qualified for automotive applications?

No - per Nexperia's revision history (v.4, Jan 2023), PBSS9110T,215 is explicitly non-automotive qualified. It lacks AEC-Q101 stress testing and automotive-specific reliability reporting. For automotive use, Nexperia recommends the −Q qualified variant PBSS9110T,215-Q, which undergoes extended temperature cycling and HTOL testing.

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is −300 mA (Table 5). However, for reliable continuous operation at IC = −1 A, the datasheet specifies IB = −100 mA in the RCEsat test condition. Exceeding −100 mA does not improve VCEsat significantly and risks excessive base region heating; design should maintain IB/IC ≤ 0.1.

Can PBSS9110T,215 replace an NPN transistor in the same circuit?

No - PBSS9110T,215 is a PNP device with opposite polarity and complementary functionality to its NPN counterpart PBSS8110T. Swapping requires inverting the supply topology (e.g., high-side vs. low-side switching), reversing biasing networks, and verifying voltage headroom for base drive. Direct substitution without schematic revision will cause circuit failure.

How does thermal performance change with PCB layout variations?

Rth(j-a) degrades from 260 K/W (with 1 cm² collector pad) to 417 K/W (standard footprint, no thermal pad). This means power dissipation must be reduced by ~38% - from 480 mW to 300 mW - to maintain the same junction temperature. Layouts without dedicated collector copper require tighter ambient temperature limits or derated current.

PBSS9110T,215 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
320mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 5V
Power - Max:
480 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PBSS9110T,215 FAQ

1.How can I place an order for PBSS9110T,215 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS9110T,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS9110T,215 reliable?

The price and inventory of PBSS9110T,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS9110T,215 is usually 5 days.

3.What payment methods are accepted for PBSS9110T,215?

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4.How is shipping managed for PBSS9110T,215?

PBSS9110T,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS9110T,215 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS9110T,215?

For technical support, including PBSS9110T,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS9110T,215 requirements.

6.How does Aetrix verify that PBSS9110T,215 is sourced from the original manufacturer or authorized distributors?

All PBSS9110T,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS9110T,215 meets industry standards.

7.What is the process for return or replacement of PBSS9110T,215?

All PBSS9110T,215 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS9110T,215, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS9110T,215 part is unused and in its original packaging.

Return procedure for PBSS9110T,215:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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