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Nexperia USA Inc. PBSS9110T-QR

Part No.:
PBSS9110T-QR
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixPBSS9110T-QR.pdf
Description:
TRANS PNP 100V 1A TO-236AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,561

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Product details

Overview

PBSS9110T-QR from Nexperia is a PNP low VCEsat transistor in SOT23 package, designed for high-efficiency switching in automotive 42 V power systems and industrial DC/DC converters. It delivers −100 V VCEO, −1 A continuous IC, 170 mΩ typical RCEsat at −1 A/−100 mA drive, and is AEC-Q101 qualified for under-hood applications.

For engineers reviewing the PBSS9110T-QR datasheet, PBSS9110T-QR pinout, PBSS9110T-QR application, or PBSS9110T-QR equivalent, this page provides verified electrical parameters, thermal derating curves, automotive qualification status, and direct replacement guidance for low-saturation PNP switching in space-constrained designs.

Technical Context

This PNP bipolar junction transistor operates with fixed-base current control and exhibits strong current gain linearity (hFE = 125–450) across −1 mA to −1 A collector currents. Its low saturation voltage is achieved via optimized epitaxial base doping and emitter geometry, enabling reduced conduction loss in high-side switch configurations.

The device's thermal resistance (Rth(j-a) = 417 K/W standard footprint; 260 K/W with 1 cm² collector pad) directly supports its 480 mW rated power dissipation at Tamb ≤ 25 °C. Transient thermal impedance data confirms stable pulsed operation up to δ = 0.02 duty cycle, matching relay and buzzer driver requirements.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −100 V - Withstands reverse-biased collector-emitter voltage in automotive 42 V systems with 2× transient margin.
IC −1 A continuous - Supports sustained load current in LED drivers and peripheral switches without forced cooling.
RCEsat 170–320 mΩ at −1 A/−100 mA - Enables <0.32 V saturation drop, reducing heat generation by >40% vs. standard PNP transistors.
hFE 125–450 at −1 A - Ensures reliable base drive margin across temperature (−55 °C to +150 °C) and production spread.
fT 100 MHz - Supports fast switching in PWM-controlled DC/DC converter feedback paths and motor gate drivers.
Tj max +150 °C - Matches under-hood ambient limits and enables operation in sealed enclosures without active cooling.

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch, tin-plated terminations compatible with standard reflow profiles.

Pin/Terminal Circuit Role Design Meaning
1 Base (B) Control input requiring −100 mA drive for full saturation; low input capacitance (Cc = 17 pF) minimizes switching delay.
2 Emitter (E) Common return path for load current; internally connected to substrate for thermal stability in high-pulsed-current operation.
3 Collector (C) Main current output terminal; optimized pad layout supports 1 cm² copper area for 260 K/W thermal resistance in PCB design.

Key Features

Feature Design Value
Low VCEsat −320 mV max at −1 A/−100 mA ensures <0.33 W conduction loss, critical for thermally constrained automotive modules.
AEC-Q101 qualification Validated per stress test standard for discrete semiconductors - required for engine control, lighting, and body electronics.
High ICM −3 A peak rating allows safe handling of inductive kickback from relays and solenoids without snubber circuits.
Wide Tamb range −65 °C to +150 °C operation supports deployment in battery management systems and under-hood ECUs.

Applications

Automotive Lighting Control Industrial Relay Driver

Use Scenario: High-side switching of 12–42 V LED headlamps and interior lamps in vehicle body control modules.

IC Role / Device Role / Timing Role: PNP transistor configured as saturated switch, turning on/off lamp current with microcontroller GPIO.

Use Value: Low RCEsat reduces thermal load in sealed lamp housings; AEC-Q101 compliance guarantees reliability over 15-year vehicle lifetime.

Use Scenario: Driving 24 V DC relays in PLC I/O modules and factory automation controllers.

IC Role / Device Role / Timing Role: High-current PNP switch providing galvanic isolation between logic-level MCU and inductive relay coil.

Use Value: −3 A peak current rating absorbs relay turn-off energy; 100 MHz fT enables fast deactivation to suppress contact arcing.

DC/DC Converter Feedback Low-Voltage Peripheral Driver

Use Scenario: Current-sense amplifier biasing and error amplifier pull-up in isolated flyback converters for automotive infotainment supplies.

IC Role / Device Role / Timing Role: Precision PNP current source/sink in op-amp feedback networks requiring stable hFE and low thermal drift.

Use Value: Tight hFE variation (125–450) across temperature ensures consistent loop gain; low VBEsat (−1.1 V) improves reference accuracy.

Use Scenario: Driving buzzers, small DC motors, and optocoupler inputs in medical handheld devices and smart sensors.

IC Role / Device Role / Timing Role: General-purpose PNP switch interfacing 3.3 V/5 V logic with 5–24 V loads in compact PCBs.

Use Value: SOT23 footprint saves board space; −5 V VEBO rating prevents damage during hot-plug events or ESD transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ON Semiconductor NSS12201LT1G VCEO = −100 V, IC = −1.2 A, RCEsat = 220–450 mΩ - higher saturation resistance, lower hFE (100–300). Lacks AEC-Q101 qualification; suitable for industrial but not automotive-grade designs. Select when cost sensitivity outweighs thermal performance and automotive compliance requirements.
Diodes Incorporated DXT7010PZ-13 VCEO = −100 V, IC = −1 A, RCEsat = 200–400 mΩ, Tj max = +150 °C - similar specs but no published AEC-Q101 report. Used in telecom infrastructure where qualification is optional; requires customer-level stress validation for automotive use. Choose only if existing supply chain leverages Diodes Inc. and qualification testing can be performed internally.

Compared with NSS12201LT1G and DXT7010PZ-13, PBSS9110T-QR delivers superior RCEsat consistency, guaranteed AEC-Q101 compliance, and tighter hFE distribution - making it the preferred choice for production automotive modules where thermal margin and qualification traceability are mandatory.

Availability

PBSS9110T-QR is available at Aetrix Electronics and suitable for automotive lighting control, industrial relay driving, and DC/DC converter feedback circuits requiring stable component supply and long-term lifecycle support.

Supply support for PBSS9110T-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with leadership in automotive-qualified components and energy-efficient power solutions.

PBSS9110T-QR belongs to Nexperia's "Low VCEsat Transistor" product line, engineered specifically for high-efficiency switching in automotive 42 V architectures and industrial power interfaces where thermal density and qualification rigor are critical.

FAQ

Is PBSS9110T-QR pin-compatible with its NPN complement PBSS8110T?

No - PBSS9110T-QR is a PNP device with pinout Base–Emitter–Collector (1–2–3), while PBSS8110T is an NPN with identical SOT23 mechanical footprint but reversed polarity and complementary electrical behavior. Circuit redesign is required for substitution; they are functional complements, not pin-for-pin replacements.

What is the maximum allowable base current for continuous operation?

The absolute maximum base current is −300 mA per datasheet limiting values. However, for reliable continuous conduction at −1 A collector current, −100 mA base drive is specified to achieve guaranteed RCEsat ≤ 320 mΩ. Exceeding −100 mA offers diminishing returns and risks localized heating at the base-emitter junction.

Does PBSS9110T-QR support wave soldering?

Yes - Nexperia provides dedicated wave soldering footprint dimensions (Fig. 14) and process guidelines. The SOT23 package is qualified for both reflow and wave soldering; recommended solder mask openings and land patterns ensure void-free joints and mechanical integrity under thermal cycling in automotive environments.

How does thermal derating affect usable current at 85 °C ambient?

At Tamb = 85 °C, power dissipation must be derated to ~240 mW (per Fig. 1 curve). With RCEsat ≈ 250 mΩ, this limits continuous IC to approximately −0.98 A - confirming robust operation in under-hood conditions without forced airflow or heatsinking.

PBSS9110T-QR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
320mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 5V
Power - Max:
300 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
TO-236AB

PBSS9110T-QR FAQ

1.How can I place an order for PBSS9110T-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS9110T-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS9110T-QR reliable?

The price and inventory of PBSS9110T-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS9110T-QR is usually 5 days.

3.What payment methods are accepted for PBSS9110T-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS9110T-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS9110T-QR?

PBSS9110T-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS9110T-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS9110T-QR?

For technical support, including PBSS9110T-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS9110T-QR requirements.

6.How does Aetrix verify that PBSS9110T-QR is sourced from the original manufacturer or authorized distributors?

All PBSS9110T-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS9110T-QR meets industry standards.

7.What is the process for return or replacement of PBSS9110T-QR?

All PBSS9110T-QR units undergo pre-shipment inspection (PSI). If there is an issue with PBSS9110T-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS9110T-QR part is unused and in its original packaging.

Return procedure for PBSS9110T-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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