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Nexperia USA Inc. PBSS9110Y,115

Part No.:
PBSS9110Y,115
Manufacturer:
Nexperia USA Inc.
Category:
Single Bipolar Transistors
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixPBSS9110Y,115.pdf
Description:
TRANS PNP 100V 1A 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:343

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Product details

Overview

PBSS9110Y,115 from NXP Semiconductors is a PNP low VCEsat bipolar junction transistor in SOT363 (SC-88) package, designed for high-efficiency switching in low-voltage, high-current paths. It delivers −100 V VCEO, −1 A continuous collector current, 320 mΩ RCEsat, −320 mV VCEsat at −1 A/−100 mA drive, and operates across −65 °C to +150 °C ambient - used in automotive 42 V power modules and telecom DC-DC converters.

For engineers reviewing the PBSS9110Y,115 datasheet, PBSS9110Y,115 pinout, PBSS9110Y,115 application, or PBSS9110Y,115 equivalent, key selection criteria include verified low saturation voltage under high IC, thermal performance on FR4 with standard footprint, PNP polarity compatibility in high-side switch topologies, and discrete BISS transistor behavior versus MOSFET alternatives.

Technical Context

This PNP BISS (Bipolar Integrated Schottky) transistor uses integrated Schottky clamping to suppress minority-carrier storage delay and reduce VCEsat without compromising breakdown rating. Its −100 V VCEO and −120 V VCBO support robust operation in 42 V automotive systems and industrial 24–48 V rails.

It exhibits stable hFE ≥125 at −1 A and −5 V VCE, with VBEsat = −1.1 V at rated current - enabling direct drive from 3.3 V or 5 V logic with appropriate base resistor sizing. Thermal resistance Rth(j-a) is 431 K/W on standard FR4, scaling to 200 K/W with 6 cm² collector pad.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO −100 V - supports switching in 42 V automotive and 48 V telecom power rails with margin
IC (DC) −1 A - enables driving lamps, relays, buzzers, and small motors directly
VCEsat −320 mV @ −1 A/−100 mA - reduces conduction loss and heat generation vs. standard PNP transistors
RCEsat 320 mΩ max - simplifies thermal design in space-constrained SOT363 layout
fT 100 MHz - sufficient for PWM switching up to ~10 MHz in DC-DC converter control stages
hFE 125–450 - allows flexible base drive design across load current range
Tamb −65 °C to +150 °C - qualified for under-hood automotive and industrial environments

Pinout & Package

SOT363 (SC-88) plastic surface-mounted package: 6-lead, 2 mm × 1.25 mm footprint, 0.65 mm pitch, 1.1 mm height. Standard FR4 mounting with tin-plated copper; thermal performance optimized via collector pad area.

Pin/Terminal Circuit Role Design Meaning
1, 2, 5, 6 Collector Parallel-connected collector terminals - provide low-inductance, high-current path and enhanced thermal dissipation
3 Base Single base input - requires external current-limiting resistor for logic-level drive
4 Emiter Emitter output - referenced to system ground or positive rail depending on high-side configuration

Key Features

Feature Design Value
Low VCEsat −320 mV at full −1 A load - cuts conduction loss by >50% vs. conventional PNP transistors
High ICM −3 A peak - handles motor startup surges and relay coil inrush without secondary protection
BISS architecture Integrated Schottky clamp - eliminates storage time delay and improves switching speed over standard BJTs
Thermal derating 625 mW Ptot with 6 cm² collector pad - enables compact PCB layouts without heatsinks in moderate-power apps
Wide Tj 150 °C max junction temperature - supports operation in sealed enclosures and high-ambient industrial zones

Applications

Automotive 42 V Power Distribution Telecom DC-DC Converter Switch

Use Scenario: High-side switch for auxiliary loads (cooling fans, HVAC actuators) in 42 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: PNP BISS transistor operating as saturated switch in constant-current mode, controlled by microcontroller GPIO.

Use Value: −320 mV VCEsat limits power loss to 320 mW at 1 A, reducing thermal stress and eliminating need for active cooling in confined fuse box locations.

Use Scenario: Synchronous rectifier or main switch in isolated flyback or forward converter for telecom base station power supplies.

IC Role / Device Role / Timing Role: High-voltage PNP switch handling primary-side current pulses up to 3 A peak during PWM cycles.

Use Value: −100 V VCEO and −120 V VCBO withstand reflected voltage spikes; 100 MHz fT ensures clean turn-off in 500 kHz–1 MHz designs.

Industrial Relay & Buzzer Driver LED Lamp Control Module

Use Scenario: Driving 24 V industrial relays and electromagnetic buzzers in PLC I/O modules and HMI panels.

IC Role / Device Role / Timing Role: Discrete PNP switch sinking inductive load current, with internal Schottky clamping suppressing back-EMF voltage overshoot.

Use Value: Integrated BISS structure eliminates need for external flyback diode, saving board space and component count while maintaining <100 ns turn-off delay.

Use Scenario: Constant-current dimming driver for 12–24 V LED arrays in commercial lighting fixtures and signage.

IC Role / Device Role / Timing Role: Linear-mode current regulator with emitter-follower configuration, set by precision sense resistor.

Use Value: Tight VCEsat tolerance (±10%) and stable hFE ensure ±3% current regulation across temperature, enabling flicker-free dimming without feedback loop.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-VCEsat transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT3005LPS-7 N-channel 30 V MOSFET in SOT363; RDS(on) = 45 mΩ @ VGS = 4.5 V; requires level-shifting for high-side use Better efficiency above 500 mA but limited to ≤30 V rails; unsuitable for 42 V automotive Select when supply ≤24 V and gate drive supports N-channel high-side topology
BC807-40,215 PNP BJT in SOT23; VCEO = −45 V; VCEsat = −700 mV @ −500 mA; lower voltage rating and higher saturation loss Cost-optimized for ≤24 V consumer gear; insufficient margin for 42 V automotive transients Select only for non-automotive 12–24 V applications where thermal budget allows higher loss

Compared with DMT3005LPS-7 and BC807-40,215, PBSS9110Y,115 uniquely balances −100 V capability, −320 mV VCEsat, and SOT363 thermal performance - making it the only option qualified for 42 V automotive switching without external clamping or heatsinking.

Availability

PBSS9110Y,115 is available at Aetrix Electronics and suitable for automotive 42 V power distribution, telecom DC-DC converter switches, and industrial relay drivers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for PBSS9110Y,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.

PBSS9110Y,115 belongs to NXP's BISS transistor product line - engineered specifically for high-efficiency, high-voltage PNP switching in automotive and industrial power management where low VCEsat and rugged thermal performance are critical.

FAQ

Is PBSS9110Y,115 suitable for high-side switching in 42 V automotive systems?

Yes. With −100 V VCEO, −120 V VCBO, and operation from −65 °C to +150 °C, PBSS9110Y,115 meets ISO 16750-2 transient requirements for 42 V mild-hybrid vehicles. Its −320 mV VCEsat at −1 A minimizes power loss and thermal rise in confined fuse box environments without forced air or heatsinks.

What base drive current is required to saturate PBSS9110Y,115 at 1 A collector current?

A base current of −100 mA is specified to achieve −320 mV VCEsat at −1 A collector current. For reliable saturation across temperature, design for −120 mA minimum using a series resistor calculated from VBEsat = −1.1 V and available drive voltage - e.g., 22 Ω for 3.3 V logic with 200 mA sink capability.

Can PBSS9110Y,115 replace a standard PNP BJT like BC807 in existing designs?

Yes, with layout verification. Pin-compatible in SOT363 footprint, but PBSS9110Y,115 offers significantly lower VCEsat (−320 mV vs. −700 mV), higher VCEO (−100 V vs. −45 V), and integrated Schottky clamping. Thermal relief and trace width must be reviewed due to higher peak current capability (−3 A vs. −1 A).

Does PBSS9110Y,115 require an external flyback diode when driving inductive loads?

No. Its BISS architecture integrates a Schottky diode between base and collector, providing inherent clamping of inductive kickback. This eliminates the need for external flyback diodes in relay, buzzer, or solenoid driver applications - reducing bill-of-materials and PCB area while ensuring sub-100 ns turn-off response.

PBSS9110Y,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Transistor Type:
PNP
Current - Collector (Ic) (Max):
1 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
320mV @ 100mA, 1A
Current - Collector Cutoff (Max):
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 500mA, 5V
Power - Max:
625 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q100
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

PBSS9110Y,115 FAQ

1.How can I place an order for PBSS9110Y,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PBSS9110Y,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PBSS9110Y,115 reliable?

The price and inventory of PBSS9110Y,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS9110Y,115 is usually 5 days.

3.What payment methods are accepted for PBSS9110Y,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PBSS9110Y,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PBSS9110Y,115?

PBSS9110Y,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PBSS9110Y,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PBSS9110Y,115?

For technical support, including PBSS9110Y,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS9110Y,115 requirements.

6.How does Aetrix verify that PBSS9110Y,115 is sourced from the original manufacturer or authorized distributors?

All PBSS9110Y,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS9110Y,115 meets industry standards.

7.What is the process for return or replacement of PBSS9110Y,115?

All PBSS9110Y,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS9110Y,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PBSS9110Y,115 part is unused and in its original packaging.

Return procedure for PBSS9110Y,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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