Nexperia USA Inc. PBSS9410PA,115
- Part No.:
- PBSS9410PA,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Single Bipolar Transistors
- Package:
- 3-PowerUDFN
- Datasheet:
-
PBSS9410PA,115.pdf
- Description:
- TRANS PNP 100V 2.7A 3HUSON
- Quantity:
- Payment:

- Shipping:

Inventory:1,013
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Product details
Overview
PBSS9410PA from NXP Semiconductors is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra-thin SOT1061 (HUSON3) leadless package, rated for −100 V VCEO, −2.7 A continuous collector current, and 110–166 mΩ RCEsat at IC = −2.7 A / IB = −135 mA - optimized for high-efficiency load switching in space-constrained battery-powered systems.
For engineers reviewing the PBSS9410PA datasheet, PBSS9410PA pinout, PBSS9410PA application, or PBSS9410PA equivalent, this device is selected for low-loss power switching where thermal performance on FR4 PCBs, compact footprint, and precise saturation voltage control are critical design requirements.
Technical Context
This PNP BISS transistor employs a proprietary low-saturation architecture enabling sub-100 mV VCEsat at moderate currents (e.g., −95 mV typ. at IC = −1 A / IB = −50 mA) while sustaining −100 V blocking capability and −4 A peak pulse current. Its exposed collector pad provides direct thermal path to PCB copper.
The device delivers DC current gain (hFE) of 170–260 at IC = −1 A and 100–150 at IC = −2 A, with transition frequency fT of 70–115 MHz - supporting fast switching (ton = 202 ns, toff = 515 ns) in motor drive and charging control circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −100 V - maximum safe collector-emitter blocking voltage with base open; enables use in 48 V industrial and 24 V automotive-derived power rails. |
| IC | −2.7 A continuous - supports sustained load current in fan/motor drivers without forced cooling on standard FR4. |
| RCEsat | 110–166 mΩ at IC = −2.7 A / IB = −135 mA - defines conduction loss (Ploss ≈ 0.8 W max), directly impacting thermal rise and efficiency. |
| toff | 515 ns typical - determines minimum switching period and maximum PWM frequency in synchronous buck or H-bridge topologies. |
| Ptot | 2.1 W with 6 cm² collector pad on FR4 - sets practical power handling limit under natural convection with optimized layout. |
| fT | 70–115 MHz - confirms suitability for high-speed digital switching, not linear amplification. |
| VBEsat | −0.95 to −1.1 V at IC = −2.7 A - defines required base drive voltage headroom and impacts gate driver selection for discrete logic-level control. |
Pinout & Package
Package: SOT1061 (HUSON3), ultra-thin 2.0 × 2.0 × 0.65 mm leadless plastic package with exposed collector thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control input requiring −135 mA base current to achieve full saturation at −2.7 A collector current; driven by MCU GPIO or dedicated driver. |
| 2 | Emitter | Common reference node tied to system ground or positive rail depending on switch topology; carries full load current. |
| 3 | Collector | Power output terminal with exposed metal pad - must be soldered to ≥1 cm² copper pour for thermal management and low-inductance current return. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCEsat | −290 to −450 mV at IC = −2.7 A - reduces conduction loss by >50% vs. conventional PNP transistors, extending battery life in portable devices. |
| Exposed collector pad | Direct thermal interface to PCB copper - achieves Rth(j-a) as low as 60 K/W on ceramic substrate, enabling higher power density. |
| Ultra-thin SOT1061 | 0.65 mm max height - allows stacking in tight vertical spaces (e.g., wearable electronics, slim power modules). |
| High ICM | −4 A single-pulse rating - supports inrush current handling in motor startup and capacitor charging applications. |
Applications
| Motor Load Switching | Battery Charging Control |
|---|---|
|
Use Scenario: Driving 12 V DC fans or small brushed motors in portable medical equipment. IC Role / Device Role / Timing Role: High-side PNP switch controlling current flow from battery to motor winding; operates in on/off mode with <500 ns turn-off for PWM speed regulation. Use Value: Low RCEsat minimizes heat generation during continuous operation, eliminating need for heatsinks in handheld enclosures. |
Use Scenario: Enabling/disabling charging path between USB-PD source and Li-ion battery pack. IC Role / Device Role / Timing Role: Reverse-polarity protection and charge enable switch placed between input and battery terminal; biased by microcontroller GPIO. Use Value: −100 V VCEO withstands voltage spikes during hot-plug events; fast toff prevents shoot-through during state transitions. |
| Power Rail Sequencing | Industrial Sensor Power Gating |
|
Use Scenario: Controlling power-up sequence of multiple voltage rails in programmable logic controllers. IC Role / Device Role / Timing Role: Discrete PNP switch isolating downstream 5 V/3.3 V regulators until upstream 12 V rail stabilizes. Use Value: Precise VCEsat ensures predictable voltage drop (<450 mV) across switch, maintaining tight output regulation tolerance. |
Use Scenario: Power gating isolated analog sensor nodes in factory automation gateways. IC Role / Device Role / Timing Role: Low-leakage (−100 nA ICES) PNP switch disconnecting sensor supply during sleep mode to reduce system quiescent current. Use Value: Ultra-low ICB0 (−100 nA at −80 V) prevents parasitic drain on backup batteries over multi-year deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP low-VCEsat switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT3005LPS-7 | N-channel MOSFET (30 V, −5 A); requires level-shifting gate drive for high-side use; RDS(on) = 35 mΩ @ VGS = −10 V. | Not directly pin-compatible; needs external gate driver and bootstrap circuitry; superior efficiency above 1 A but limited voltage range. | Select when >40 V blocking is unnecessary and gate drive complexity is acceptable for lower conduction loss. |
| PBSS9410PA's NPN complement PBSS8510PA | Identical SOT1061 package, +100 V VCEO, +2.7 A IC, same RCEsat range - complementary polarity only. | Used in low-side switching or push-pull configurations; cannot replace PBSS9410PA in high-side topology without circuit redesign. | Choose only for dual-rail designs requiring matched PNP/NPN pairs; not a functional substitute in existing high-side layouts. |
Compared with DMT3005LPS-7, PBSS9410PA offers simpler drive (no level shift needed) and higher voltage rating but higher conduction loss; versus PBSS8510PA, it provides identical performance metrics in inverted polarity - making it irreplaceable in fixed high-side PNP positions.
Availability
PBSS9410PA is available at Aetrix Electronics and suitable for battery-driven devices, power management subsystems, and motor control circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PBSS9410PA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer applications.
PBSS9410PA belongs to NXP's BISS transistor product line, engineered specifically for high-efficiency, space-constrained power switching in portable and battery-operated equipment where thermal performance and low saturation voltage are primary design constraints.
FAQ
What is the maximum allowable junction temperature for PBSS9410PA?
The absolute maximum junction temperature (Tj) is 150 °C per IEC 60134 limiting values. Operation above this threshold risks permanent degradation of hFE and increased leakage. Derating is required above 25 °C ambient - for example, Ptot drops to 1.4 W at Tamb = 75 °C with 6 cm² collector pad on FR4.
Can PBSS9410PA be used in high-frequency PWM applications above 100 kHz?
Yes - its 70–115 MHz fT and 515 ns toff support PWM frequencies up to 500 kHz in non-resonant topologies. However, switching losses increase significantly above 200 kHz due to stored charge (ts = 325 ns); layout optimization and gate drive strength become critical.
Is PBSS9410PA automotive qualified?
No - the datasheet explicitly states this is a non-automotive qualified product. It lacks AEC-Q101 stress testing, automotive-grade process controls, and extended temperature validation beyond −55 °C to +150 °C ambient. Use in automotive applications voids warranty and requires full customer qualification.
What PCB layout practices maximize thermal performance?
Solder the exposed collector pad (Pin 3) to ≥1 cm² of 2 oz copper with ≥4 thermal vias (0.3 mm diameter) connecting to inner/ground planes. Avoid routing traces under the package. For 2.1 W operation, use 6 cm² copper area per NXP's thermal characterization data - achieving Rth(j-a) ≤90 K/W on FR4.
PBSS9410PA,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 2.7 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 450mV @ 135mA, 2.7A
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 170 @ 1A, 2V
- Power - Max:
- 2.1 W
- Frequency - Transition:
- 115MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 3-HUSON (2x2)
PBSS9410PA,115 FAQ
1.How can I place an order for PBSS9410PA,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PBSS9410PA,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of PBSS9410PA,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PBSS9410PA,115 is usually 5 days.
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5.How can I obtain technical support or documentation for PBSS9410PA,115?
For technical support, including PBSS9410PA,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PBSS9410PA,115 requirements.
6.How does Aetrix verify that PBSS9410PA,115 is sourced from the original manufacturer or authorized distributors?
All PBSS9410PA,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PBSS9410PA,115 meets industry standards.
7.What is the process for return or replacement of PBSS9410PA,115?
All PBSS9410PA,115 units undergo pre-shipment inspection (PSI). If there is an issue with PBSS9410PA,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PBSS9410PA,115 part is unused and in its original packaging.
Return procedure for PBSS9410PA,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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