STMicroelectronics PD54008
- Part No.:
- PD54008
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD54008.pdf
- Description:
- RF MOSFET LDMOS 7.5V POWERSO10
- Quantity:
- Payment:

- Shipping:

Inventory:9,916
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PD54008 from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial applications up to 1 GHz. It delivers 8 W output power with 11.5 dB gain at 500 MHz under 7.5 V supply and 150 mA quiescent drain current, featuring excellent thermal stability and linearity optimized for portable radio transmitters.
For engineers reviewing the PD54008 datasheet, PD54008 pinout, PD54008 application, or PD54008 equivalent, key selection considerations include its PowerSO-10RF SMD package, 25 V drain-source breakdown voltage, 1.2 °C/W junction-to-case thermal resistance, and verified S-parameter performance across 50–1500 MHz under multiple bias conditions.
Technical Context
The PD54008 operates in common-source configuration with gate-controlled lateral conduction, leveraging ST's LDMOS technology for high gain and linearity. Its input impedance (e.g., 1.73 + j0.96 Ω at 500 MHz) and drain load impedance (1.48 − j1.62 Ω at same frequency) are optimized for broadband matching networks in 50 Ω systems.
It supports three standard bias points-IDQ = 150 mA, 800 mA, and 1.5 A-with corresponding trade-offs in P1dB (8 W), gain (11.5 dB), and efficiency (55 %). Load mismatch tolerance up to 20:1 VSWR enables robust operation in real-world antenna environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 25 V - Maximum safe drain-source voltage before avalanche breakdown; sets upper limit for supply rail design. |
| P1dB | 8 W @ 500 MHz - Output power at 1 dB compression point; defines usable linear RF output range. |
| Gain (GP) | 11.5 dB @ 500 MHz - Small-signal power gain; determines required driver stage output level. |
| ηD | 55 % @ 500 MHz - Drain efficiency at 8 W output; directly impacts thermal management and battery life in portable radios. |
| Rth(j-c) | 1.2 °C/W - Junction-to-case thermal resistance; enables calculation of heatsink requirements for 73 W max dissipation. |
| fmax | 1 GHz - Upper frequency limit for stable RF power amplification; validated via S-parameter roll-off. |
| CISS | 91 pF @ 7.5 V - Input capacitance; critical for gate drive network design and stability compensation. |
Pinout & Package
PD54008 is housed in the PowerSO-10RF plastic SMD package (JEDEC-approved), available in formed-lead (gull-wing) and straight-lead variants. The package features integrated thermal pad for direct PCB copper pour attachment and optimized RF layout geometry including controlled-impedance microstrip transitions.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GATE | Control electrode | Accepts DC bias and RF input signal; requires external gate resistor and DC blocking capacitor per application note AN1294. |
| SOURCE | Common reference node | Connected to RF ground plane and thermal pad; serves as return path for RF and DC currents. |
| DRAIN | Power output terminal | Delivers amplified RF output; routed via microstrip Z1/Z2 to 50 Ω load; thermally coupled to heatsink through exposed pad. |
Key Features
| Feature | Design Value |
|---|---|
| Common-source topology | Enables single-ended RF amplifier design with simplified matching network and predictable S-parameter behavior. |
| PowerSO-10RF package | First JEDEC-approved high-power SMD RF package; provides 73 W power dissipation capability and repeatable assembly on automated SMT lines. |
| Linearity (IMD3) | −40 dBc @ 470 MHz, 8 W output - Enables clean multi-carrier transmission in land-mobile radio systems without excessive filtering. |
| Thermal stability | Normalized VGS drift < ±4 % over −25 to +75 °C case temperature - maintains consistent bias point and gain across operating environment. |
| Load mismatch tolerance | Operates reliably under 20:1 VSWR at all phase angles - eliminates need for circulators in antenna interface for portable radios. |
Applications
| Portable Radio Transmitter | Land-Mobile Radio Base Station |
|---|---|
Use Scenario: Battery-powered handheld two-way radios operating in VHF/UHF bands (470–520 MHz). IC Role / Device Role / Timing Role: Final RF power amplifier stage delivering 8 W PEP output into 50 Ω antenna system. Use Value: High linearity (IMD3 ≤ −40 dBc) ensures spectral purity meeting ETSI EN 300 113 compliance without added filtering. | Use Scenario: Compact repeater units deployed in remote infrastructure with limited cooling. IC Role / Device Role / Timing Role: Driver or final-stage amplifier in 500 MHz broadband repeater front-end. Use Value: 1.2 °C/W Rth(j-c) enables operation at 70 °C case temperature with passive heatsinking only. |
| ISM Band Industrial Heater Control | Amateur Radio HF/VHF Amplifier |
Use Scenario: Solid-state RF heating systems operating at 27.12 MHz or 40.68 MHz ISM bands. IC Role / Device Role / Timing Role: Class AB power amplifier driving resonant tank circuit. Use Value: 25 V V(BR)DSS margin allows safe operation with 24 V DC supply and switching transients. | Use Scenario: Homebrew HF/VHF linear amplifier modules for amateur operators. IC Role / Device Role / Timing Role: Broadband RF power device covering 175–520 MHz with tunable matching. Use Value: Verified S-parameters across 175–1500 MHz enable predictable wideband matching using standard Smith chart techniques. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF158 | BJT-based, lower gain (8 dB), higher VCE(sus) = 30 V, TO-220 package | Requires higher base drive current; less suitable for low-voltage portable designs | Prefer when higher breakdown voltage and legacy BJT reliability are prioritized over efficiency and SMD assembly. |
| PD57008 | LDMOS successor with 12 W P1dB, improved ηD = 60 %, same PowerSO-10RF footprint | Drop-in replacement with higher output and better thermal performance | Select for new designs requiring extended output headroom and reduced thermal load without board rework. |
Compared with MRF158, PD54008 offers superior gain and efficiency in SMD form; compared with PD57008, it trades 4 W output and 5 % efficiency for mature qualification and cost-sensitive production.
Availability
PD54008 is available at Aetrix Electronics and suitable for portable radio transmitters, land-mobile radio base stations, ISM band industrial heaters, and amateur radio amplifier modules requiring stable component supply across long-lifecycle programs.
Supply support for PD54008 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete technologies with over 40 years of RF component innovation.
PD54008 belongs to ST's LdmoST family of lateral DMOS RF power transistors, engineered specifically for high-efficiency, broadband amplification in portable and infrastructure wireless equipment.
FAQ
What is the maximum recommended drain voltage for continuous operation?
The absolute maximum drain-source voltage is 25 V, but ST specifies 7.5 V DC supply for rated 8 W RF output at 500 MHz. Operation above 9.5 V is permitted only for short-duration test conditions (e.g., load mismatch evaluation), not for sustained duty-cycle use.
Does PD54008 require external gate protection diodes?
No. The device integrates internal gate protection structures compliant with ESD Class 1B (≥2 kV HBM). External TVS diodes are unnecessary unless operating in high-static industrial environments exceeding IEC 61000-4-2 Level 4.
Can PD54008 be used in Class C amplifier configurations?
Yes - its lateral MOSFET structure supports Class C operation, but gain compression and harmonic content must be measured empirically. ST characterizes it in Class AB (IDQ = 150/800/1500 mA); Class C biasing requires custom thermal derating due to increased peak junction temperature.
Is the PowerSO-10RF package lead-free compatible?
Yes. PowerSO-10RF meets RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 3. Reflow profile follows IPC/JEDEC J-STD-020D with peak temperature ≤ 260 °C and time above liquidus ≤ 60 seconds.
PD54008 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 500MHz
- Gain:
- 11.5dB
- Voltage - Test:
- 7.5 V
- Current Rating (Amps):
- 5A
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 8W
- Voltage - Rated:
- 25 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- 10-PowerSO
PD54008 FAQ
1.How can I place an order for PD54008 through Aetrix?
Please submit a Request for Quotation (RFQ) for PD54008 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD54008 reliable?
The price and inventory of PD54008 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD54008 is usually 5 days.
3.What payment methods are accepted for PD54008?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD54008 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD54008?
PD54008 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD54008 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD54008?
For technical support, including PD54008 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD54008 requirements.
6.How does Aetrix verify that PD54008 is sourced from the original manufacturer or authorized distributors?
All PD54008 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD54008 meets industry standards.
7.What is the process for return or replacement of PD54008?
All PD54008 units undergo pre-shipment inspection (PSI). If there is an issue with PD54008, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD54008 part is unused and in its original packaging.
Return procedure for PD54008:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PD54008 Tags

-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits

-
TAV2-501+
Mini-Circuits

-
CE3514M4-C2
CEL

-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits

-
CE3512K2-C1
CEL

-
AFM907NT1
NXP Semiconductors

-
SKY65050-372LF
Skyworks Solutions Inc.

-
CE3520K3-C1
CEL

-
AFT09MS007NT1
NXP USA Inc.

-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

.jpg)