STMicroelectronics PD54008-E

Overview

PD54008-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 8 W output power at 500 MHz with 11.5 dB gain and 55% drain efficiency under 7.5 V supply. It features 25 V drain-source breakdown voltage, 1.2 °C/W junction-to-case thermal resistance, and operates up to 1 GHz in commercial and industrial broadband amplifiers. Its PowerSO-10RF plastic SMD package enables high-reliability RF assembly in portable radio transmitters.

For engineers reviewing the PD54008-E datasheet, PD54008-E pinout, PD54008-E application, or PD54008-E equivalent, key selection criteria include its 8 W P1dB performance at 500 MHz, 1.2 °C/W thermal resistance, 25 V V(BR)DSS rating, gate-source voltage range of ±20 V, and compatibility with 7–12 V drain bias networks in Class AB RF amplifier stages.

Technical Context

This device implements ST's LDMOS technology in a lateral structure optimized for broadband RF power amplification. It operates in common-source mode with fixed 150 mA quiescent drain current (IDQ), delivering stable gain and linearity across 175–1500 MHz when biased at 7.5 V.

The PowerSO-10RF package integrates formed-lead gull-wing terminals and a thermally enhanced exposed drain pad, enabling direct PCB copper pour attachment for efficient heat dissipation-critical for maintaining 165 °C maximum junction temperature during sustained 8 W RF output.

Key Specifications

Pinout & Package

PD54008-E uses the PowerSO-10RF (formed lead) plastic SMD package-a JEDEC-approved, high-power RF-optimized surface-mount outline with exposed drain pad for thermal conduction and three main terminals: Gate (G), Source (S), and Drain (D). The package measures 9.5 mm × 14.1 mm × 3.5 mm (L × W × H) with gull-wing leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF300BN and PD57008-E, PD54008-E offers optimal balance of compact SMD integration, 8 W output, and low-voltage (7.5 V) operation-making it uniquely suitable for space-constrained, battery-powered portable radios where thermal and voltage constraints dominate.

Availability

PD54008-E is available at Aetrix Electronics and suitable for land mobile radio transmitters, UHF public safety repeaters, ISM band industrial amplifiers, and amateur radio linear applications requiring stable component supply, JEDEC-compliant SMD packaging, and proven RF reliability.

Supply support for PD54008-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF solutions for industrial, automotive, and communications markets.

PD54008-E belongs to ST's LdmoST plastic RF power transistor family-engineered specifically for high-gain, broadband commercial and industrial RF amplification up to 1 GHz, with emphasis on thermal robustness and SMD manufacturability.

FAQ

What is the recommended gate bias voltage for PD54008-E in Class AB operation?

The datasheet specifies VGS(Q) = 2.0–5.0 V at ID = 150 mA and VDS = 10 V. For stable Class AB operation at 7.5 V drain supply, a gate bias of 3.2–3.8 V is typical-achievable via resistive divider or active bias circuit to maintain 150 mA IDQ across temperature per Figure 5.

Can PD54008-E operate reliably at 12 V drain voltage?

Yes-absolute maximum V(BR)DSS is 25 V, and Figure 12 shows POUT increases to ~14 W at VDS = 12 V (IDQ = 150 mA, 500 MHz). However, drain efficiency drops to ~40%, and thermal design must accommodate higher power dissipation; RthJC remains 1.2 °C/W, so case temperature must stay ≤70 °C.

Is the PowerSO-10RF package lead-free and RoHS compliant?

Yes-PD54008-E is offered in ECOPACK®-compliant versions meeting RoHS Directive 2011/65/EU. The PowerSO-10RF package uses matte tin (Sn) lead finish and is rated MSL 3 per J-STD-020B, with full compliance documentation available on ST's website.

How does PD54008-E handle load mismatch conditions?

Per Table 5, PD54008-E sustains full 8 W output into any load phase angle at 20:1 VSWR (500 MHz, VDD = 9.5 V, IDQ = 150 mA) without failure or parametric shift-demonstrating intrinsic ruggedness from ST's LDMOS process and PowerSO-10RF thermal design.