STMicroelectronics PD54008L-E

Overview

PD54008L-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral DMOS RF power transistor in PowerFLAT™ (5×5) leadless SMD package, delivering 8 W output power with 15 dB gain at 500 MHz, 7.5 V supply, and 200 mA quiescent drain current. It features ESD protection (HBM Class 2, MM Class M3), 3 °C/W junction-to-case thermal resistance, and broadband operation up to 1 GHz for portable radio transmitters.

For engineers reviewing the PD54008L-E datasheet, PD54008L-E pinout, PD54008L-E application, or PD54008L-E equivalent, key selection criteria include its 8 W P1dB output, 50% drain efficiency at 500 MHz, 1.3 Ω + j2.01 Ω input impedance at 500 MHz, PowerFLAT™ thermal performance, and compatibility with 7 V common-source biasing in portable RF power stages.

Technical Context

The PD54008L-E employs ST's STH1LV LDMOS process for high linearity and thermal stability in broadband RF amplification. Its common-source configuration supports single-ended 50 Ω input/output matching across 470–530 MHz, with measured return loss >12 dB and power gain flatness ±0.5 dB over that band.

Designed for fixed-gain, low-voltage RF power stages, it operates with 7.5 V drain supply and 200 mA IDQ, achieving 50% drain efficiency at 8 W output. The PowerFLAT™ package enables direct PCB thermal coupling via exposed drain pad, supporting continuous-wave operation under 70°C case temperature limits.

Key Specifications

Pinout & Package

PD54008L-E uses the PowerFLAT™ (5×5) leadless plastic package with exposed drain pad on bottom for thermal conduction. Dimensions: 5.00 mm × 5.00 mm × 1.00 mm, pitch 1.27 mm, footprint per Table 11 (ST document p.13).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF300AN and PD57008-E, PD54008L-E offers optimal trade-off of low-voltage (7.5 V) operation, compact PowerFLAT™ footprint, and proven linearity for portable UHF systems-making it preferred where size, battery efficiency, and 500 MHz narrowband performance are prioritized.

Availability

PD54008L-E is available at Aetrix Electronics and suitable for portable radio transmitters, UHF wireless microphones, ISM-band data links, and low-power base station repeaters requiring stable component supply and RoHS-compliant packaging.

Supply support for PD54008L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and consumer markets.

PD54008L-E belongs to ST's LdmoST Plastic RF power transistor family, engineered specifically for high-efficiency, broadband UHF amplification in space-constrained portable equipment using advanced LDMOS silicon and thermally optimized PowerFLAT™ packaging.

FAQ

What is the recommended gate bias voltage for PD54008L-E in Class AB operation?

The datasheet specifies V_GS(Q) = 2.0–5.0 V at I_D = 50 mA and V_DS = 10 V. For 200 mA I_DQ at 7.5 V V_DD, typical gate bias is 3.2–3.8 V using a resistive divider with bypass capacitor. Stability requires gate stopper resistor (10–22 Ω) close to the gate pad to suppress VHF oscillation.

Can PD54008L-E be used at 900 MHz?

No-its broadband characterization is validated only from 470–530 MHz. At 900 MHz, gain drops below 8 dB and efficiency falls below 35%, per Figure 6–8. For 900 MHz, ST recommends PD57008-E or MRF101AN, which maintain ≥12 dB gain and ≥45% efficiency across that band.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No-the exposed drain pad is internally connected to the transistor's drain terminal and must be soldered directly to a solid PCB ground plane. This serves dual purpose: RF return path and primary thermal conduction path. Thermal vias (≥6× 0.3 mm) beneath the pad are mandatory to achieve rated R_thJC = 3 °C/W.

Does PD54008L-E require external ESD protection diodes?

No-PD54008L-E integrates on-chip ESD protection rated HBM Class 2 (2 kV) and MM Class M3 (200 V), sufficient for standard SMT handling and board-level operation. External TVS diodes are unnecessary unless system-level surge requirements exceed IEC 61000-4-2 Level 3 (8 kV contact).