STMicroelectronics PD55003-E

Overview

PD55003-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial amplifiers. It delivers 3 W output power with 17 dB gain at 500 MHz under 12.5 V supply and 50 mA quiescent drain current, operates up to 1 GHz, and features excellent thermal stability and linearity in the PowerSO-10RF plastic package.

For engineers reviewing the PD55003-E datasheet, PD55003-E pinout, PD55003-E application, or PD55003-E equivalent, this device is selected for high-reliability RF final-stage amplification where gain flatness, drain efficiency, and load mismatch tolerance (20:1 VSWR) are critical - especially in mobile radio transmitters and broadband repeater systems.

Technical Context

The PD55003-E employs ST's LDMOS technology optimized for RF power operation in common-source configuration. Its static characteristics include 40 V drain-source breakdown voltage, 2.5 A continuous drain current, and 0.75 Ω on-resistance at VGS = 10 V; dynamic performance is characterized by 36 pF input capacitance (CISS), 24 pF output capacitance (COSS), and 2.4 pF reverse transfer capacitance (CRSS) at 12.5 V.

It supports broadband operation from 480 MHz to 1 GHz with measured S-parameters showing stable gain (14–17 dB) and return loss >10 dB across frequency bands. The device is biased at 50 mA IDQ for 3 W P1dB operation and maintains ≥45% drain efficiency at that output level.

Key Specifications

Pinout & Package

The PD55003-E is housed in the PowerSO-10RF plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring formed leads and optimized RF layout for minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF300BN and PD57003-E, the PD55003-E offers optimal balance of 3 W output, 17 dB gain, and compact SMD packaging - making it ideal for space-constrained mobile radio designs where thermal management and assembly scalability are prioritized over raw power.

Availability

PD55003-E is available at Aetrix Electronics and suitable for mobile radio transmitters, land mobile repeaters, ISM-band amplifiers, and industrial broadband transmitters requiring stable component supply across extended product lifecycles.

Supply support for PD55003-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader specializing in power management, analog, MEMS, and RF technologies for automotive, industrial, and communications markets.

The PD55003-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial and industrial amplifiers operating up to 1 GHz with superior linearity and thermal reliability.

FAQ

What is the recommended gate bias voltage for linear operation?

The PD55003-E achieves optimal linearity at VGS(Q) = 2.0–5.0 V (typical 3.5 V) with IDQ = 50 mA. Bias must be set using a stable, low-noise DC source; gate resistor values between 10 Ω and 100 Ω suppress oscillation while maintaining gain flatness across 480–1000 MHz.

Can PD55003-E operate at 28 V supply?

No - the absolute maximum VDS is 40 V, but the device is characterized and optimized for 12.5 V operation. At 28 V, RDS(ON) and thermal limits cannot guarantee safe operation; ST specifies only 12.5 V for 3 W P1dB and 17 dB gain. Higher-voltage alternatives like MRF300BN should be used instead.

Is the PowerSO-10RF package lead-free and RoHS-compliant?

Yes - the PD55003-E uses ST's ECOPACK®-compliant PowerSO-10RF package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. It is rated MSL 3 per J-STD-020B and qualified for lead-free reflow soldering profiles up to 260°C peak.

How does thermal resistance affect PCB layout?

With RthJC = 3.0 °C/W, the exposed drain pad must be connected to a minimum 250 mm² copper pour (2 oz) tied to internal ground planes via ≥6 thermal vias (0.3 mm diameter). Application note AN1294 specifies exact footprint dimensions and solder mask openings to maintain thermal performance and prevent delamination.