STMicroelectronics PD55003L-E

Overview

PD55003L-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 40 V drain-source voltage, 2.5 A continuous drain current, and delivering 3 W output power with 17 dB gain at 500 MHz under 12.5 V supply - optimized for car mobile radio broadband amplification.

For engineers reviewing the PD55003L-E datasheet, PD55003L-E pinout, PD55003L-E application, or PD55003L-E equivalent, key selection criteria include its PowerFLAT™ (5×5) leadless SMD package thermal resistance (5.7 °C/W), ESD protection class (HBM 2, MM M3), 50% drain efficiency at 3 W, and broadband impedance matching up to 1 GHz.

Technical Context

This device employs ST's LDMOST plastic-family technology with lateral structure for high thermal stability and linearity. It operates in enhancement mode with gate threshold voltage of 2.0–5.0 V and exhibits low input capacitance (Ciss = 34 pF) and output capacitance (Coss = 23 pF) at 12.5 V, enabling stable broadband matching from 480–1500 MHz.

The transistor supports common-source biasing at V_DS = 12.5 V and I_DQ = 50 mA, achieving 20:1 load mismatch tolerance and S-parameters validated across three quiescent currents (0.15 A, 0.8 A, 1.5 A), confirming robust RF performance under varying drive conditions.

Key Specifications

Pinout & Package

PD55003L-E uses the PowerFLAT™ (5×5) leadless surface-mount package: 5 mm × 5 mm footprint, 1.0 mm max height, exposed drain pad for thermal conduction, compliant with MSL Level 3 per J-STD-020B.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF300BN and PD55003S-E, PD55003L-E uniquely balances 3 W output, 5.7 °C/W thermal resistance, and HBM Class 2 ESD in a 5×5 mm leadless package - making it optimal for space- and reliability-constrained mobile radio final stages where thermal headroom and board-level robustness are prioritized over raw power.

Availability

PD55003L-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF public safety repeaters, and ISM-band industrial heating systems requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for PD55003L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and RF devices for industrial, automotive, and consumer markets.

PD55003L-E belongs to ST's LDMOST plastic-family RF power transistor product line, engineered specifically for high-linearity, thermally robust broadband amplification in space-constrained mobile and portable radio systems.

FAQ

What is the recommended gate bias voltage for linear operation at 500 MHz?

The datasheet specifies V_GS(Q) = 2.0–5.0 V at I_D = 50 mA and V_DS = 10 V. For linear Class AB operation at 500 MHz, ST recommends setting V_GS to 3.5 V to achieve optimal gain flatness and IMD3 suppression while maintaining 50 mA quiescent current - verified via Figure 8 and Table 4.

Can PD55003L-E operate reliably at 1 GHz with 3 W output?

No - the 3 W P1dB rating is specified only at 500 MHz. At 1 GHz, typical P1dB drops to ~1.5 W (per Figure 10 and Table 12), and gain falls to ~7 dB. For 1 GHz operation, derate output power to ≤1.2 W and verify stability with S-parameters (Table 10–12) and load-pull data.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No - the exposed drain pad is the primary drain terminal and must be soldered directly to a dedicated, thermally optimized copper area connected to the RF output network. It is not isolated; connecting it to system ground will short the drain to ground and destroy the device.

Does PD55003L-E require external matching networks for 50 Ω systems?

Yes - the device has complex impedances: Z_IN = 1.88 – j5.93 Ω and Z_DL = 10.28 + j8.92 Ω at 500 MHz (Table 8). Standard 50 Ω input/output matching requires discrete L-C networks or microstrip stubs, as shown in Figure 15 and Table 9 test circuit.