STMicroelectronics PD55003S-E

Overview

PD55003S-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor in the LdmoST plastic family. It delivers 3 W output power with 17 dB gain at 500 MHz and 12.5 V supply, operates up to 1 GHz, and features excellent thermal stability and linearity. It is optimized for car mobile radios and broadband industrial RF amplifiers.

For engineers reviewing the PD55003S-E datasheet, PD55003S-E pinout, PD55003S-E application, or PD55003S-E equivalent, key selection criteria include its PowerSO-10RF straight-lead package, 40 V drain-source breakdown voltage, 31.7 W power dissipation at 70°C case temperature, and verified 52% drain efficiency at 3 W output @ 500 MHz.

Technical Context

The PD55003S-E employs ST's LDMOS technology in a JEDEC-approved PowerSO-10RF SMD package, enabling high-reliability RF power operation without bond wires. Its common-source configuration supports broadband matching from 480–860 MHz with stable gain and low input return loss (≤ –10 dB at 500 MHz).

Static characteristics include 0.75 Ω R_DS(ON) at V_GS = 10 V and 1 A, while dynamic performance shows 36 pF C_ISS, 24 pF C_OSS, and 2.4 pF C_RSS at 12.5 V - critical for impedance matching network design and stability analysis.

Key Specifications

Pinout & Package

PD55003S-E uses the PowerSO-10RF straight-lead plastic package - a JEDEC-qualified, high-power SMD RF package with integrated heat slug and optimized RF layout. The package provides low-inductance source grounding and controlled lead inductance for stable high-frequency operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD55003-E and MRF372, PD55003S-E offers optimal balance of SMD manufacturability, 3 W output, and 17 dB gain in the 480–860 MHz band - making it ideal for cost-sensitive, volume-produced mobile radio modules.

Availability

PD55003S-E is available at Aetrix Electronics and suitable for car mobile radios, UHF industrial amplifiers, and ISM-band signal generators requiring stable component supply and JEDEC-compliant SMD packaging.

Supply support for PD55003S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF technologies for automotive, industrial, and communications markets.

The LdmoST plastic family targets high-efficiency, thermally robust RF power amplification in compact SMD packages - specifically engineered for mobile and broadband infrastructure applications demanding reliability and ease of assembly.

FAQ

What is the maximum operating frequency of the PD55003S-E?

The PD55003S-E is characterized for operation up to 1 GHz, with full performance data provided at 480 MHz, 500 MHz, 520 MHz, and 860 MHz. At 1 GHz, S-parameter measurements confirm usable gain (≥5 dB) and stability, though output power drops to ~1.5 W under standard bias conditions.

Does the PD55003S-E require external gate protection?

Yes - the absolute maximum gate-source voltage is ±20 V. In practical RF amplifier designs, a series gate resistor (10–100 Ω) and parallel Zener clamp (e.g., 15 V) are recommended to prevent ESD damage and transient overvoltage during hot insertion or load mismatch events.

How does the PowerSO-10RF straight-lead package differ electrically from the formed-lead version?

The straight-lead variant (PD55003S-E) exhibits marginally lower parasitic inductance in the source path, resulting in improved stability margin above 600 MHz and slightly better input return loss (–12 dB vs. –10 dB at 500 MHz). Electrical specifications remain identical per datasheet Table 7.

Can the PD55003S-E be operated at 28 V for higher output power?

No - the absolute maximum drain-source voltage is 40 V, but the device is characterized and qualified only at V_DD = 12.5 V. Operating at 28 V exceeds the specified bias condition and risks premature failure due to increased electric field stress and thermal runaway, even if instantaneous voltage remains below 40 V.