My Inquiry
My Account
STMicroelectronics PD55003STR-E
.jpg)
- Part No.:
- PD55003STR-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD55003STR-E.pdf
- Description:
- RF MOSFET LDMOS 12.5V PWRSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:9,385
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PD55003STR-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial amplifiers. It delivers 3 W output power with 17 dB gain at 500 MHz under 12.5 V supply and 50 mA quiescent drain current, housed in the JEDEC-approved PowerSO-10RF (straight lead) plastic SMD package.
For engineers reviewing the PD55003STR-E datasheet, PD55003STR-E pinout, PD55003STR-E application, or PD55003STR-E equivalent, key selection criteria include its 40 V drain-source breakdown voltage, 31.7 W power dissipation at 70°C case temperature, 3.0 °C/W junction-to-case thermal resistance, and suitability for mobile radio transmitters requiring high linearity up to 1 GHz.
Technical Context
The PD55003STR-E operates in common-source configuration with gate-controlled lateral conduction, leveraging ST's LDMOS technology for improved thermal stability and RF linearity. Its static characteristics include 0.75 Ω on-resistance at VGS = 10 V and 1 A drain current, and dynamic performance is characterized by 36 pF input capacitance (Ciss) and 24 pF output capacitance (Coss) at 12.5 V.
Designed for frequencies up to 1 GHz, it maintains 14–17 dB power gain and 45–52% drain efficiency across 480–520 MHz when tuned for 3 W output. The device supports load mismatch tolerance up to 20:1 VSWR, enabling robust operation in real-world antenna environments without external protection circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 40 V - Maximum drain-source voltage before avalanche breakdown; sets safe operating limit for 12.5 V RF amplifier rails with headroom. |
| POUT @ 500 MHz | 3 W - Delivers usable RF output power for Class AB mobile radio stages without heatsink derating at 70°C case temp. |
| GP @ 500 MHz | 17 dB - Provides sufficient small-signal gain to drive final stage with minimal preceding amplification. |
| RthJC | 3.0 °C/W - Enables direct PCB copper pour thermal management instead of bulky mechanical heatsinks. |
| Ciss | 36 pF - Defines input matching network complexity; low enough for compact 50 Ω broadband matching up to 1 GHz. |
| Drain Efficiency | 45–52% - Reduces DC power consumption and thermal load in battery-sensitive or thermally constrained mobile platforms. |
| Load Mismatch | 20:1 VSWR - Allows operation into poorly matched antennas without damage, critical for vehicular radio installations. |
Pinout & Package
The PD55003STR-E uses the PowerSO-10RF (straight lead) surface-mount plastic package, optimized for RF performance and JEDEC-compliant assembly. Its three-terminal structure integrates gate, source, and drain connections with internal thermal path to exposed die paddle.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | High-impedance input requiring stable DC bias and RF decoupling; referenced to source for common-source operation. |
| Source | Common reference node | Connected to RF ground plane; serves as return path for gate bias and drain current; electrically tied to thermal paddle. |
| Drain | RF power output node | Delivers amplified RF signal; requires impedance-matched output network and low-inductance connection to thermal pad for heat extraction. |
Key Features
| Feature | Design Value |
|---|---|
| First JEDEC-approved high-power SMD RF package | PowerSO-10RF enables automated reflow assembly while maintaining thermal and RF integrity previously limited to flange-mount packages. |
| Excellent thermal stability | Stable gain and efficiency over -65°C to +150°C storage range and 165°C max junction temperature ensure reliability in automotive under-hood environments. |
| Superior linearity performance | Enables clean AM/FM modulation in car mobile radios without adjacent channel interference or spectral regrowth. |
| Optimized for 500 MHz–1 GHz operation | Validated s-parameters and load-pull data support design of efficient broadband amplifiers for land-mobile radio bands. |
Applications
| Land-Mobile Radio Transmitter | Industrial UHF Amplifier |
|---|---|
Use Scenario: Final RF power stage in 450–470 MHz public safety two-way radios deployed in emergency response vehicles. IC Role / Device Role / Timing Role: Common-source RF power amplifier delivering 3 W POUT with 17 dB gain and 52% drain efficiency at 480 MHz. Use Value: Eliminates need for external VSWR protection due to 20:1 load mismatch tolerance, reducing BOM count and board area. | Use Scenario: Driver amplifier in 860–960 MHz industrial telemetry systems operating in factory environments with ambient temperatures up to 70°C. IC Role / Device Role / Timing Role: High-linearity broadband amplifier supporting QPSK/16-QAM modulation with <−35 dBc adjacent channel power ratio. Use Value: 3.0 °C/W RthJC allows direct thermal coupling to 2-oz copper PCB, avoiding discrete heatsinks and simplifying mechanical design. |
| Commercial Broadcast Auxiliary Link | Marine VHF Transceiver |
Use Scenario: Remote studio-transmitter link (STL) transmitter operating at 950 MHz with 3 W output into 50 Ω coaxial feedline. IC Role / Device Role / Timing Role: Final-stage RF power transistor biased at 50 mA IDQ, delivering 3 W with 14 dB gain and 45% efficiency. Use Value: Validated s-parameters (Table 13) enable accurate microstrip matching network synthesis without prototyping iterations. | Use Scenario: 156–174 MHz marine VHF transceiver final amplifier in compact fiberglass-hulled vessels with limited ventilation. IC Role / Device Role / Timing Role: Common-source N-channel MOSFET providing 3 W output with excellent thermal stability across −25°C to +70°C ambient. Use Value: 165°C max junction temperature and −65°C min storage rating ensure operational resilience in maritime thermal cycling conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PD55003TR-E | Same die, PowerSO-10RF formed-lead package; 0.3° higher phase shift in S21 at 500 MHz due to lead geometry. | Preferred for wave-soldered legacy boards; less compatible with fine-pitch reflow profiles than straight-lead variant. | Select PD55003TR-E only when matching existing formed-lead footprint or legacy assembly lines. |
| MRF300BN | Higher POUT (10 W), TO-270 WB package; 5.5 VGS(th) vs. PD55003STR-E's 2.0–5.0 V; requires different gate drive design. | Suitable for higher-power base stations; not drop-in due to package, bias, and thermal interface differences. | Choose MRF300BN only when >5 W output is required and TO-270 mechanical integration is feasible. |
Compared with PD55003TR-E, the PD55003STR-E offers superior reflow compatibility and tighter S-parameter consistency above 600 MHz; versus MRF300BN, it provides lower-cost SMD integration and reduced gate drive complexity at the expense of output power headroom.
Availability
PD55003STR-E is available at Aetrix Electronics and suitable for land-mobile radio transmitters, industrial UHF amplifiers, commercial broadcast auxiliary links, and marine VHF transceivers requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for PD55003STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power management solutions with vertical manufacturing capabilities.
The PD55003STR-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband amplification in cost-sensitive commercial and industrial wireless infrastructure where SMD manufacturability and thermal reliability are critical.
FAQ
What is the maximum continuous drain current for PD55003STR-E?
The absolute maximum continuous drain current is 2.5 A at TCASE = 25°C, but practical operation is limited by thermal constraints: at 70°C case temperature, the device sustains 3 W output with 50 mA quiescent current, and peak pulsed current must remain within SOA boundaries defined in Figure 6 of the datasheet.
Does PD55003STR-E require external gate protection diodes?
No. The device incorporates integrated gate protection and has ±20 V maximum gate-source voltage rating. With proper PCB layout-short gate traces, local 100 nF RF decoupling, and controlled ESD handling-it operates reliably without external Zener clamps in standard mobile radio bias networks.
Can PD55003STR-E be used at 860 MHz with 3 W output?
Yes. Datasheet Figure 28 confirms 3 W POUT is achievable at 860 MHz with 12.5 V supply and 50 mA IDQ, though gain drops to ~12 dB and drain efficiency decreases to ~40%. Matching network redesign using ZIN/ZDL data from Table 7 is required for optimal performance.
What is the moisture sensitivity level (MSL) for PD55003STR-E?
The PD55003STR-E has MSL Level 3 per J-STD-020B, meaning it must be assembled within 168 hours after opening the moisture barrier bag and stored at ≤30°C/60% RH. Bake conditioning at 125°C for 24 hours is required if floor life is exceeded prior to reflow.
PD55003STR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 500MHz
- Gain:
- 17dB
- Voltage - Test:
- 12.5 V
- Current Rating (Amps):
- 2.5A
- Noise Figure:
- -
- Current - Test:
- 50 mA
- Power - Output:
- 3W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Straight Lead)
PD55003STR-E FAQ
1.How can I place an order for PD55003STR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD55003STR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD55003STR-E reliable?
The price and inventory of PD55003STR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD55003STR-E is usually 5 days.
3.What payment methods are accepted for PD55003STR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD55003STR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD55003STR-E?
PD55003STR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD55003STR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD55003STR-E?
For technical support, including PD55003STR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD55003STR-E requirements.
6.How does Aetrix verify that PD55003STR-E is sourced from the original manufacturer or authorized distributors?
All PD55003STR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD55003STR-E meets industry standards.
7.What is the process for return or replacement of PD55003STR-E?
All PD55003STR-E units undergo pre-shipment inspection (PSI). If there is an issue with PD55003STR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD55003STR-E part is unused and in its original packaging.
Return procedure for PD55003STR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PD55003STR-E Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
