STMicroelectronics PD55008

Overview

PD55008 from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial RF amplification up to 1 GHz. It delivers 8 W output power with 17 dB gain at 500 MHz under 12.5 V supply and 150 mA quiescent drain current, featuring 55% drain efficiency and 1.8 °C/W junction-to-case thermal resistance in PowerSO-10RF package.

For engineers reviewing the PD55008 datasheet, PD55008 pinout, PD55008 application, or PD55008 equivalent, this device is selected for high-linearity, thermally stable RF final-stage amplification in mobile radio transmitters, base station repeaters, and broadband industrial RF systems where SMD-compatible high-power density and load mismatch tolerance (20:1 VSWR) are critical.

Technical Context

This LDMOS transistor operates in common-source configuration with gate-controlled enhancement-mode conduction, optimized for RF power amplification across 480–1500 MHz. Its lateral structure enables excellent thermal stability and linearity, supported by low input/output capacitances (CISS = 58 pF, COSS = 38 pF) and high transconductance (gFS = 1.6 mho).

The device uses ST's proprietary PowerSO-10RF plastic SMD package-JEDEC-approved and specifically engineered for RF performance-including formed-lead gull-wing geometry, integrated thermal pad, and impedance-matched microstrip layout compatibility per application note AN1294.

Key Specifications

Pinout & Package

PD55008 is housed in PowerSO-10RF, a JEDEC-qualified surface-mount plastic RF package with gull-wing leads and an exposed thermal pad on the underside. The package features optimized RF parasitics, high thermal conductivity, and mechanical robustness for automated assembly and high-reliability field deployment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6V2010NT1, PD55008 offers lower system complexity and cost at 12.5 V operation but trades off peak power and frequency range; compared with PD57008, it provides proven field reliability at slightly lower linearity and output capability, making it suitable for cost-sensitive legacy mobile radio platforms.

Availability

PD55008 is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF public safety repeaters, and ISM-band industrial RF heaters requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for PD55008 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF technologies for automotive, industrial, and communications markets.

PD55008 belongs to ST's LdmoST Plastic family of RF power transistors, engineered specifically for high-efficiency, high-linearity, thermally robust amplification in SMD-based mobile and infrastructure RF systems.

FAQ

What is the maximum safe operating frequency for PD55008?

PD55008 maintains usable gain (S21 > 6 dB) up to 1500 MHz per measured S-parameter data (page 12), with optimal performance between 480–520 MHz. At 900 MHz, it delivers 6 W POUT and 12 dB gain under 12.5 V/150 mA bias, confirming reliable operation across UHF bands.

Can PD55008 be used in Class C amplifier configurations?

No-PD55008 is characterized and qualified only for Class AB operation with IDQ ≥ 150 mA. Its lateral LDMOS structure and gate threshold behavior (VGS(Q) = 2.0–5.0 V) are optimized for linear amplification; Class C use risks thermal runaway and violates absolute maximum ratings for VGS and ID.

Is thermal derating required above 70°C case temperature?

Yes-power dissipation must be linearly derated above 70°C using Rth(j-c) = 1.8 °C/W. At Tc = 100°C, maximum allowable PDISS drops to 35.2 W; at Tc = 125°C, it falls to 21.6 W. Thermal design must ensure Tj ≤ 165°C under worst-case RF and DC load conditions.

Does PD55008 require external gate protection diodes?

No-PD55008 integrates ESD protection on gate and drain terminals rated to ±2 kV HBM. However, external 100 Ω gate series resistor and 100 pF RF bypass capacitor are recommended per application note AN1294 to suppress VHF/UHF oscillation and improve stability under mismatched loads.