STMicroelectronics PD55008-E

Overview

PD55008-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, designed for broadband commercial and industrial RF amplification up to 1 GHz. It delivers 8 W output power with 17 dB gain at 500 MHz under 12.5 V supply and 150 mA quiescent drain current, featuring 52.8 W power dissipation capability and 1.8 °C/W junction-to-case thermal resistance. Its primary application is high-linearity car mobile radio transmitters.

For engineers reviewing the PD55008-E datasheet, PD55008-E pinout, PD55008-E application, or PD55008-E equivalent, key selection criteria include its PowerSO-10RF (formed lead) package compatibility, 40 V drain-source breakdown voltage, 50–55% drain efficiency at 8 W output, load mismatch tolerance up to 20:1 VSWR, and S-parameter performance across 50–1500 MHz.

Technical Context

This device operates in common-source mode with fixed gate biasing, optimized for Class AB linear amplification in VHF/UHF bands. Its LDMOS structure provides stable transconductance (1.6 mho) and low capacitance profile (CISS = 58 pF, COSS = 38 pF), enabling broadband impedance matching without external neutralization.

The PowerSO-10RF package integrates a thermally enhanced copper leadframe and RF-optimized internal layout, supporting direct PCB mounting with minimal parasitic inductance. Thermal design relies on case temperature monitoring (VGS drift vs. Tc documented) and requires heatsinking per AN1294 mounting guidelines.

Key Specifications

Pinout & Package

PD55008-E is housed in the PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring exposed drain paddle for thermal conduction and optimized RF lead geometry to minimize parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD55008S-E, the PD55008-E offers identical RF performance but requires formed-lead handling in SMT lines; versus PD54003S-E, it provides 2.7× more output power at the cost of 3 dB lower small-signal gain - making it the sole choice for 8 W mobile radio final stages.

Availability

PD55008-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF land mobile base stations, VHF broadcast auxiliary links, and industrial wireless sensor hubs requiring stable component supply across extended temperature ranges and high-reliability RF operation.

Supply support for PD55008-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and microcontroller technologies for automotive, industrial, and consumer markets.

PD55008-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband linear amplification in mobile and infrastructure radio equipment operating up to 1 GHz.

FAQ

What is the maximum operating frequency of the PD55008-E?

The PD55008-E is characterized for operation up to 1 GHz, with verified RF performance including 17 dB gain and 8 W output at 500 MHz, and usable gain down to 1500 MHz (S21 > 0.29 @ 1500 MHz). Its LDMOS structure maintains stability and linearity across VHF and UHF bands without neutralization.

Does PD55008-E require external gate resistors for stability?

Yes - the datasheet recommends a 10 Ω gate stopper resistor (R3 in Figure 26) placed as close as possible to the gate pin to suppress VHF oscillations. This is critical due to the device's high gain and low feedback capacitance (CRSS = 2.8 pF), especially in broadband layouts without harmonic traps.

Can PD55008-E be used in Class C operation?

No - PD55008-E is optimized for Class AB linear operation, as confirmed by its specified 150 mA quiescent drain current, linearity-focused packaging, and IMD3 characterization. Class C use would exceed safe operating area limits and degrade reliability due to uncontrolled peak currents and thermal cycling.

Is thermal derating required above 70°C case temperature?

Yes - the 52.8 W power dissipation rating applies only at TC = 70°C. Derating follows the 1.8 °C/W RthJC value: for every 1°C rise above 70°C, maximum allowable PDISS decreases by 0.556 W. At TC = 100°C, max PDISS drops to 36.0 W.