STMicroelectronics PD55008L-E

Overview

PD55008L-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in PowerFLAT™ (5×5) package, configured in common source topology for broadband RF amplification up to 1 GHz. It delivers 8 W output power with 17 dB gain at 500 MHz under 12.5 V supply and 150 mA quiescent drain current, featuring integrated ESD protection and 4.1 °C/W junction-to-case thermal resistance. It is optimized for car mobile radio transmitters requiring high linearity and thermal stability.

For engineers reviewing the PD55008L-E datasheet, PD55008L-E pinout, PD55008L-E application, or PD55008L-E equivalent, this device is selected for RF final-stage amplification where gain flatness, load mismatch tolerance (20:1 VSWR), and ruggedness under dynamic RF conditions are critical design requirements.

Technical Context

The PD55008L-E employs ST's STH1LV LDMOS technology, enabling high transconductance (1.6 mho) and low output capacitance (COSS = 38 pF @ 12.5 V) for stable broadband operation. Its lateral structure supports excellent thermal stability and high efficiency (63% typ. at 500 MHz, 8 W output).

Operating in common-source configuration with gate-source voltage range of –0.5 V to +15 V and drain-source breakdown voltage of 40 V, it sustains 5 A continuous drain current and withstands 20:1 VSWR across all phase angles at full rated output - a key requirement for mobile radio front-end robustness.

Key Specifications

Pinout & Package

PD55008L-E uses the leadless PowerFLAT™ (5×5) surface-mount package with exposed thermal pad (pin 1–3: Drain; pin 4: Gate; pin 5: Source). The package complies with ECOPACK® environmental standards and features lead-free second-level interconnect.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with MRF158G and PD55008-E, PD55008L-E offers superior thermal resistance, higher gain, and integrated ESD protection - making it the preferred choice for new car radio and compact UHF transmitter designs demanding reliability and board-area efficiency.

Availability

PD55008L-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF land mobile base stations, ISM band industrial heaters, and amateur radio amplifier modules requiring stable component supply and long-term production continuity.

Supply support for PD55008L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF devices for industrial, automotive, and consumer markets.

PD55008L-E belongs to ST's PowerFLAT™ RF LDMOS transistor product line, engineered specifically for high-linearity, thermally robust RF power amplification in space-constrained mobile and portable radio equipment.

FAQ

What is the recommended gate bias voltage for PD55008L-E in Class AB operation?

The datasheet specifies VGS(Q) = 2.0–5.0 V at ID = 150 mA and VDS = 10 V. For stable Class AB operation at 12.5 V drain supply, a gate bias of 3.5 V is typical, achieved using resistive divider or active bias circuitry to maintain quiescent current within ±10% over temperature.

Can PD55008L-E be used at 900 MHz with full 8 W output?

No - the 8 W output rating is specified at 500 MHz. At 900 MHz, typical POUT drops to ~4.2 W (per Figure 2), and gain falls to ~10 dB (per Table 7). Operation at 900 MHz is feasible but requires derating output power and verifying thermal margin with measured RthJC and PCB layout.

Is the PowerFLAT™(5x5) package compatible with standard reflow profiles?

Yes - PD55008L-E is MSL 3 rated and qualified for Pb-free reflow per JEDEC J-STD-020B. Peak temperature must not exceed 260°C, with time above 217°C limited to 60–150 seconds. The exposed thermal pad requires solder paste stencil design per Figure 7 footprint.

Does PD55008L-E require external matching networks?

Yes - the device is not internally matched. S-parameter data (Tables 7–9) shows strong frequency-dependent input/output impedance; broadband 50 Ω matching networks must be designed using Smith chart synthesis or EM simulation, especially for >500 MHz operation.