STMicroelectronics PD55008S-E

Overview

PD55008S-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, designed for broadband commercial and industrial RF amplification up to 1 GHz. It delivers 8 W output power at 500 MHz with 17 dB gain and 55% drain efficiency under 12.5 V supply and 150 mA quiescent drain current, optimized for car mobile radio transmitters.

For engineers reviewing the PD55008S-E datasheet, PD55008S-E pinout, PD55008S-E application, or PD55008S-E equivalent, key selection criteria include its PowerSO-10RF (straight lead) package thermal resistance (1.8 °C/W), 40 V drain-source breakdown voltage, 52.8 W power dissipation at 70°C case temperature, and verified S-parameter performance across 50–1500 MHz.

Technical Context

This device operates in common-source mode with lateral LDMOS architecture, enabling high linearity and thermal stability for Class AB RF power amplification. Its gate threshold voltage (2.0–5.0 V) and transconductance (1.6 mho) support stable biasing at 150 mA IDQ, while input/output impedance data (e.g., ZIN = 1.409 − j3.448 Ω at 500 MHz) facilitate matching network design.

The PowerSO-10RF package integrates formed or straight leads for surface-mount assembly and features JEDEC-approved mechanical dimensions optimized for RF performance-low parasitic inductance, controlled ground path, and direct thermal coupling to PCB copper. Mounting guidelines are documented in ST application note AN1294.

Key Specifications

Pinout & Package

PD55008S-E uses the PowerSO-10RF (straight lead) plastic package-a JEDEC-approved, high-power SMD RF package with integrated heatsink pad and optimized RF layout. The package provides low thermal resistance (1.8 °C/W) and controlled impedance paths for broadband operation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD55008-E and PD54003S-E, PD55008S-E uniquely balances 8 W output, 17 dB gain, and straight-lead SMD manufacturability-making it optimal for new automotive and industrial RF designs requiring production scalability and thermal headroom.

Availability

PD55008S-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF land mobile radio base stations, VHF broadcast auxiliary links, and industrial wireless sensor hubs requiring stable component supply and JEDEC-compliant RF packaging.

Supply support for PD55008S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF solutions for automotive, industrial, and communications markets.

PD55008S-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-linearity, broadband amplification in mobile and infrastructure radio systems operating up to 1 GHz.

FAQ

What is the maximum safe operating frequency for PD55008S-E?

The device is characterized and guaranteed for stable operation up to 1 GHz, with S-parameter data validated from 50 MHz to 1500 MHz. At 1 GHz, measured gain remains ≥10 dB and efficiency ≥40%, confirming usability in UHF applications such as 868/915 MHz ISM bands and 800–900 MHz LTE uplink boosters.

Does PD55008S-E require external stabilization components?

Yes-application note AN1294 specifies mandatory gate-stopper resistors (e.g., 10 Ω in series with gate) and source inductance control to suppress VHF/UHF oscillations. Unstable operation may occur above 300 MHz without proper layout and external RF chokes, especially under wideband load mismatches.

How does the PowerSO-10RF package differ between PD55008S-E and PD55008-E?

Both use identical die and thermal/mechanical specifications, but PD55008S-E has straight leads for standard SMT placement, while PD55008-E uses formed (bent) leads for through-hole-compatible mounting. Straight leads enable higher placement accuracy and better coplanarity on fine-pitch PCBs used in automotive RF modules.

Can PD55008S-E operate at 28 V supply voltage?

No-absolute maximum V(BR)DSS is 40 V, but the device is characterized and qualified only at VDD = 12.5 V. Operation at 28 V exceeds recommended conditions and risks premature failure due to increased electric field stress and thermal runaway; ST specifies no performance data beyond 15.5 V in load-mismatch testing.