STMicroelectronics PD55008STR-E

Overview

PD55008STR-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 40 V drain-source voltage, 4 A continuous drain current, and 8 W RF output power at 500 MHz with 17 dB gain under 12.5 V supply. It features 1.8 °C/W junction-to-case thermal resistance and operates up to 1 GHz in commercial and industrial broadband amplifiers.

For engineers reviewing the PD55008STR-E datasheet, PD55008STR-E pinout, PD55008STR-E application, or PD55008STR-E equivalent, key selection criteria include its PowerSO-10RF (straight lead) package thermal performance, 50% drain efficiency at 8 W output, load mismatch tolerance up to 20:1 VSWR, and suitability for car mobile radio RF final-stage amplification.

Technical Context

This device implements ST's LDMOS technology in a true SMD plastic RF power package-PowerSO-10RF-designed for high reliability and optimized RF impedance matching. Its lateral structure enables excellent thermal stability and linearity without requiring external bias networks for basic operation.

The transistor operates in common-source mode with gate-controlled enhancement behavior, supporting DC–1 GHz frequency range. Static parameters include 2.0–5.0 V gate threshold voltage and 0.67 V on-resistance at 1.5 A; dynamic performance is characterized by 58 pF input capacitance (CISS) and 1.5–1.7 dB insertion loss across 480–520 MHz band.

Key Specifications

Pinout & Package

PD55008STR-E is housed in the PowerSO-10RF (straight lead) package-a JEDEC-approved, high-power SMD RF package with integrated heatsink pad and optimized RF layout. The package features three main terminals: Gate, Source, and Drain, with Source internally connected to the exposed thermal pad for low-inductance grounding.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Compared with PD55008S-E, PD55008STR-E offers identical RF specs but enables high-volume SMT production via tape-and-reel delivery; versus PD55003S-E, it provides triple the output power at the cost of 3 dB lower small-signal gain-making it optimal for final-stage rather than driver-stage use.

Availability

PD55008STR-E is available at Aetrix Electronics and suitable for car mobile radio amplifiers, industrial UHF transmitters, commercial broadband amplifiers, and ISM band signal generator output stages requiring stable component supply and JEDEC-compliant SMD RF packaging.

Supply support for PD55008STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for automotive, industrial, and consumer markets.

PD55008STR-E belongs to ST's LdmoST plastic family of RF power transistors, designed specifically for high-efficiency, high-linearity, and thermally robust operation in mobile and fixed RF infrastructure applications up to 1 GHz.

FAQ

What is the maximum operating frequency of PD55008STR-E?

The device is characterized for operation up to 1 GHz, with full RF performance data provided through 1.5 GHz in S-parameter tables. At 1 GHz, typical output power remains above 4 W with 12 dB gain and 40% drain efficiency under standard 12.5 V, 150 mA bias conditions.

Does PD55008STR-E require external gate protection?

Yes-gate-source voltage must be limited to ±20 V absolute maximum. A series 10 Ω resistor and parallel 18 V Zener diode between gate and source are recommended to prevent ESD damage and overvoltage during hot-plug or RF overload events.

How is thermal management implemented in the PowerSO-10RF package?

The exposed Source-terminal thermal pad must be soldered to ≥4 cm² of 2 oz copper on the PCB, connected via ≥6 thermal vias (0.3 mm diameter) to internal ground planes. This achieves the specified 1.8 °C/W RthJC and prevents junction temperature exceedance at 70°C case temperature.

Can PD55008STR-E be used in Class C amplifier configurations?

No-it is optimized for Class AB linear operation with 150 mA quiescent drain current. Class C biasing would violate the specified IDQ range, degrade linearity, increase harmonic content beyond regulatory limits, and risk thermal runaway due to reduced conduction angle cooling.