Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics PD55008TR

Part No.:
PD55008TR
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
PowerSO-10 Exposed Bottom Pad
Datasheet:
AetrixPD55008TR.pdf
Description:
RF MOSFET LDMOS 12.5V POWERSO10
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,891

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PD55008TR from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, designed for broadband commercial and industrial RF amplification up to 1 GHz. It delivers 8 W output power at 500 MHz with 17 dB gain and 55% drain efficiency under 12.5 V supply and 150 mA quiescent drain current, optimized for car mobile radio transmitters.

For engineers reviewing the PD55008TR datasheet, PD55008TR pinout, PD55008TR application, or PD55008TR equivalent, this device requires attention to gate-source voltage control (2.0–5.0 V), thermal resistance (1.8 °C/W), RF input/output impedance matching (e.g., ZIN ≈ 1.589 − j1.185 Ω @ 500 MHz), and PowerSO-10RF package mounting per AN1294.

Technical Context

The PD55008TR employs ST's LDMOS technology for high linearity and thermal stability in RF power stages. Its lateral structure enables excellent gain flatness across 480–520 MHz and supports load mismatch tolerance up to 20:1 VSWR at all phase angles.

It operates in common-source mode with fixed 12.5 V drain supply and adjustable gate bias (VGS(Q) = 2.0–5.0 V), delivering stable POUT from 3 W to 13 W depending on VDD and IDQ. Input return loss exceeds 10 dB across 500–900 MHz at typical bias conditions.

Key Specifications

Parameter Value and Actual Design Meaning
POUT @ 500 MHz 8 W - usable RF output power into matched 50 Ω load at 12.5 V, 150 mA IDQ
Power Gain 17 dB - small-signal forward gain enabling single-stage amplification without cascading
Drain Efficiency 55 % - power conversion efficiency critical for thermal management in mobile radio PA stages
V(BR)DSS 40 V - maximum drain-source breakdown voltage allowing safe operation at 12.5 V with margin
Rth(j-c) 1.8 °C/W - junction-to-case thermal resistance dictating heatsink requirements for 52.8 W max dissipation
CISS / COSS / CRSS 58 / 38 / 2.8 pF @ 12.5 V - input/output/reverse transfer capacitances defining matching network design at UHF
f = 500 MHz ZIN 1.589 − j1.185 Ω - complex input impedance requiring microstrip or lumped LC matching

Pinout & Package

PD55008TR is housed in the PowerSO-10RF plastic SMD package (gull-wing formed leads), JEDEC-approved for high-power RF applications. The package features low-inductance source grounding and optimized thermal path via exposed die paddle.

Pin/Terminal Circuit Role Design Meaning
GATE Control electrode Receives DC bias (2.0–5.0 V) and RF input signal; requires stable 0–20 V rating and low-impedance drive
SOURCE Common reference node DC ground return and RF ground plane connection; bonded directly to exposed thermal pad for heat conduction
DRAIN Power output node Delivers RF output power; connects to output matching network and DC supply via RF choke

Key Features

Feature Design Value
Common-source configuration Enables standard RF amplifier topology with grounded source, simplifying PCB layout and biasing
PowerSO-10RF package First JEDEC-approved SMD RF power package offering 52.8 W dissipation and repeatable assembly
Linearity performance Supports AM/FM modulation fidelity in car radio transmitters with minimal intermodulation distortion
Thermal stability Normalized VGS drift < ±5% over −40°C to +100°C case temperature, ensuring bias stability
Load mismatch tolerance Operates safely under 20:1 VSWR at all phase angles - critical for antenna detuning resilience

Applications

Car Mobile Radio Transmitter UHF Industrial Amplifier

Use Scenario: Final RF power stage in 450–520 MHz land-mobile radio base stations and vehicle-mounted transceivers.

IC Role / Device Role / Timing Role: High-efficiency Class AB RF power amplifier delivering 8 W output with 17 dB gain.

Use Value: Enables compact, air-cooled transmitter designs meeting ETSI EN 300 113 spectral mask requirements.

Use Scenario: Linear driver amplifier in 480–520 MHz industrial telemetry and remote monitoring systems.

IC Role / Device Role / Timing Role: Broadband RF power gain block operating from 12.5 V supply with adjustable IDQ.

Use Value: Delivers consistent 15–17 dB gain across 40 MHz bandwidth without external feedback compensation.

AM/FM Broadcast Auxiliary ISM Band Signal Generator

Use Scenario: Low-cost exciter stage in 500 MHz FM broadcast auxiliary links for studio-transmitter links (STL).

IC Role / Device Role / Timing Role: Medium-power RF amplifier with high linearity to preserve modulation integrity.

Use Value: Achieves >45 dBc adjacent channel suppression at 8 W output, reducing need for post-amplifier filtering.

Use Scenario: Output stage in programmable 480–900 MHz ISM-band test signal generators and lab equipment.

IC Role / Device Role / Timing Role: Tunable RF power source supporting variable POUT from 3 W to 12 W via VGS and IDQ control.

Use Value: Maintains >10 dB input return loss across full frequency range, minimizing source interaction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
MRF6V2010N Higher POUT (10 W @ 2.14 GHz), GaN-on-SiC, 28 V operation, Rth(j-c) = 1.5 °C/W Targets cellular infrastructure; not drop-in due to different bias voltage and thermal interface Choose for higher-frequency (>1 GHz), higher-efficiency designs where 28 V supply is available
PD57008 LDMOS successor with 8 W @ 900 MHz, improved CRSS (1.2 pF), same PowerSO-10RF footprint Direct upgrade path for 800–900 MHz bands; retains pinout but requires updated matching network Prefer for new designs targeting 850 MHz PCS or LTE bands where higher frequency response is required

Compared with MRF6V2010N and PD57008, PD55008TR offers lower-cost 12.5 V operation and proven reliability in 450–520 MHz mobile radio, while trading off frequency range and GaN-level efficiency.

Availability

PD55008TR is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF industrial telemetry systems, AM/FM broadcast auxiliary links, and ISM-band signal generators requiring stable component supply and long-term lifecycle support.

Supply support for PD55008TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in analog, power, and RF solutions for automotive, industrial, and communications markets.

PD55008TR belongs to ST's LdmoST Plastic family of lateral RF power MOSFETs, engineered specifically for cost-sensitive, thermally constrained UHF transmitter applications demanding high linearity and ruggedness.

FAQ

What is the recommended gate bias voltage for linear operation?

The PD55008TR achieves optimal linearity at VGS(Q) = 3.5 V (typical) with IDQ = 150 mA and VDD = 12.5 V. This bias point yields 17 dB gain and 55% drain efficiency at 500 MHz. Gate voltage must remain within 2.0–5.0 V to avoid cutoff or excessive IDSS leakage, and should be stabilized using a low-noise, low-impedance source per AN1294 guidelines.

Can PD55008TR operate at 900 MHz?

Yes - the PD55008TR delivers 6 W POUT and 12 dB gain at 900 MHz with VDD = 12.5 V and IDQ = 150 mA, as confirmed by S-parameter data (S21 = 1.561 + j2.639 Ω). However, gain and efficiency decline above 520 MHz; for dedicated 800–900 MHz use, ST recommends the PD57008 as a direct-performance successor.

What thermal interface material is required for the PowerSO-10RF package?

A minimum 1.0 W/m·K thermally conductive epoxy or solder (e.g., Sn96.5/Ag3.0/Cu0.5) must bond the exposed thermal pad to a copper heatsink area ≥ 200 mm². Thermal resistance from junction to ambient must stay below 12 °C/W to maintain Tj ≤ 165 °C at 52.8 W dissipation, per the Rth(j-c) = 1.8 °C/W spec and AN1294 mounting instructions.

Is PD55008TR pin-compatible with PD55008S?

Yes - both share identical PowerSO-10RF footprint and pin assignment (GATE–SOURCE–DRAIN), differing only in lead form: PD55008TR uses formed gull-wing leads, while PD55008S uses straight leads. PCB land patterns are identical; reflow profiles differ slightly due to lead geometry, but no redesign is needed for board reuse.

PD55008TR Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
PowerSO-10 Exposed Bottom Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
-
Frequency:
500MHz
Gain:
17dB
Voltage - Test:
12.5 V
Current Rating (Amps):
4A
Noise Figure:
-
Current - Test:
150 mA
Power - Output:
8W
Voltage - Rated:
40 V
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
10-PowerSO

PD55008TR FAQ

1.How can I place an order for PD55008TR through Aetrix?

Please submit a Request for Quotation (RFQ) for PD55008TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PD55008TR reliable?

The price and inventory of PD55008TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD55008TR is usually 5 days.

3.What payment methods are accepted for PD55008TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD55008TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PD55008TR?

PD55008TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PD55008TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PD55008TR?

For technical support, including PD55008TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD55008TR requirements.

6.How does Aetrix verify that PD55008TR is sourced from the original manufacturer or authorized distributors?

All PD55008TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD55008TR meets industry standards.

7.What is the process for return or replacement of PD55008TR?

All PD55008TR units undergo pre-shipment inspection (PSI). If there is an issue with PD55008TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PD55008TR part is unused and in its original packaging.

Return procedure for PD55008TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PD55008TR Tags

  • PD55008TR
  • PD55008TR PDF
  • PD55008TR Datasheet
  • PD55008TR Specifications
  • PD55008TR Images
  • STMicroelectronics
  • STMicroelectronics PD55008TR
  • Buy PD55008TR
  • PD55008TR Price
  • PD55008TR Distributor
  • PD55008TR Supplier
  • PD55008TR Wholesale
Related Products
3SK294(TE85L,F)
3SK294(TE85L,F)

Toshiba Semiconductor and Storage

SAV-551+
SAV-551+

Mini-Circuits

TAV2-501+
TAV2-501+

Mini-Circuits

CE3514M4-C2
CE3514M4-C2

CEL

AFT05MS004NT1
AFT05MS004NT1

NXP USA Inc.

SAV-541+
SAV-541+

Mini-Circuits

CE3512K2-C1
CE3512K2-C1

CEL

AFM907NT1
AFM907NT1

NXP Semiconductors

SKY65050-372LF
SKY65050-372LF

Skyworks Solutions Inc.

CE3520K3-C1
CE3520K3-C1

CEL

AFT09MS007NT1
AFT09MS007NT1

NXP USA Inc.

AFT09MS015NT1
AFT09MS015NT1

NXP USA Inc.

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER