STMicroelectronics PD55008TR-E

Overview

PD55008TR-E from STMicroelectronics is an N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, rated for 40 V drain-source voltage, 4 A continuous drain current, and 8 W output power at 500 MHz with 17 dB gain under 12.5 V supply. It employs ST's LDMOS technology and is optimized for car mobile radio amplifiers operating up to 1 GHz.

For engineers reviewing the PD55008TR-E datasheet, PD55008TR-E pinout, PD55008TR-E application, or PD55008TR-E equivalent, key selection criteria include its 1.8 °C/W junction-to-case thermal resistance, PowerSO-10RF (formed lead) SMD package, 50–1500 MHz S-parameter performance, load mismatch tolerance up to 20:1 VSWR, and suitability for broadband industrial RF final-stage amplification.

Technical Context

This device operates in common-source mode with fixed 150 mA quiescent drain current biasing, delivering broadband RF power amplification from 50 MHz to 1 GHz. Its lateral LDMOS structure provides superior linearity and thermal stability versus vertical MOSFETs, enabling high-fidelity modulation in FM/AM mobile radio transmitters.

The PowerSO-10RF package integrates a thermally enhanced exposed drain pad and optimized RF layout-validated by S-parameter data across 50–1500 MHz-with input return loss ≥10 dB and power gain ≥15 dB at 500 MHz, supporting impedance-matched PCB design per AN1294.

Key Specifications

Pinout & Package

PD55008TR-E uses the PowerSO-10RF (formed lead) plastic package-a JEDEC-approved, high-power SMD RF package with integrated exposed drain thermal pad and optimized leadframe geometry for minimal parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with PD55008S-E, PD55008TR-E offers tape-and-reel packaging for automated SMT placement, while PD54003S-E trades 5 W output headroom for reduced thermal stress in compact enclosures-making PD55008TR-E optimal for production-scale mobile radio transmitter modules demanding 8 W reliability.

Availability

PD55008TR-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, industrial UHF repeaters, FM broadcast boosters, and ISM band signal generators requiring stable component supply and JEDEC-compliant RF power delivery.

Supply support for PD55008TR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in analog, power, and RF solutions for automotive, industrial, and communications markets.

PD55008TR-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial and industrial amplifiers operating up to 1 GHz with emphasis on thermal robustness and linearity.

FAQ

What is the maximum recommended DC supply voltage for PD55008TR-E?

The absolute maximum drain-source voltage (V(BR)DSS) is 40 V, but the device is characterized and optimized for 12.5 V operation. Operating above 15 V increases thermal stress and reduces reliability margin; ST specifies 12.5 V for all published RF performance data including 8 W output and 17 dB gain at 500 MHz.

Does PD55008TR-E require external gate protection diodes?

No external gate protection diodes are required. The device features built-in gate protection with ±20 V maximum gate-source voltage rating and 1 µA IGSS leakage at 20 V, validated per JESD22-A114 ESD testing. However, proper PCB layout-short gate traces, local decoupling, and RF chokes-is essential to prevent oscillation and overvoltage transients.

How does the PowerSO-10RF package differ from standard SO-10 packages?

PowerSO-10RF is a thermally enhanced variant with an exposed drain pad spanning Pins 6–10, optimized for RF performance via minimized leadframe inductance and controlled impedance paths. Unlike standard SO-10, it includes internal thermal vias and is JEDEC-qualified for high-power RF use-enabling 52.8 W dissipation at 70°C case temperature with RthJC = 1.8 °C/W.

Can PD55008TR-E be used in Class C amplifier configurations?

PD55008TR-E is characterized and specified for Class AB operation at 150 mA IDQ. While it can be biased into Class C, doing so degrades linearity, increases harmonic content, and voids guaranteed specifications-including gain flatness, efficiency, and load mismatch tolerance. ST's application guidance (AN1294) explicitly recommends Class AB for mobile radio compliance.