STMicroelectronics PD55015-E

Overview

PD55015-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial amplification up to 1 GHz. It delivers 15 W output power with 14 dB gain at 500 MHz under 12.5 V supply and 150 mA quiescent drain current, featuring excellent thermal stability and linearity optimized for car mobile radio transmitters.

For engineers reviewing the PD55015-E datasheet, PD55015-E pinout, PD55015-E application, or PD55015-E equivalent, key selection criteria include its PowerSO-10RF SMD package, 40 V drain-source breakdown voltage, 73 W power dissipation capability at 70°C case temperature, and verified 50–1500 MHz S-parameter performance across multiple bias conditions.

Technical Context

The PD55015-E operates in common-source configuration using ST's LDMOS technology, enabling high gain and linearity without requiring external feedback networks. Its gate threshold voltage (2.0–5.0 V) and low on-resistance (0.8 V V_DS(ON) at 2.5 A) support stable Class AB operation in RF final stages.

Designed for 12.5 V DC supply and 500 MHz–1 GHz frequency range, it exhibits measured P1dB = 15 W, power gain = 12–14 dB, and drain efficiency = 50–55% at 500 MHz - validated across formed-lead and straight-lead PowerSO-10RF variants per JEDEC-compliant test circuits.

Key Specifications

Pinout & Package

PD55015-E is housed in the PowerSO-10RF plastic package - ST's first JEDEC-approved high-power SMD RF package, optimized for thermal reliability and RF performance. The package features formed leads and integrates internal source bonding to minimize parasitic inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF300AN and PD57015-E, the PD55015-E offers optimal cost-performance balance for 12.5 V mobile radio systems where proven thermal stability and mature LDMOS reliability outweigh raw power density gains.

Availability

PD55015-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, land-mobile two-way radios, ISM band industrial amplifiers, and amateur radio exciters requiring stable component supply and long-lifecycle support.

Supply support for PD55015-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in automotive, industrial, and power discrete solutions.

The PD55015-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-reliability, high-linearity mobile and industrial RF amplification up to 1 GHz.

FAQ

What is the recommended gate bias voltage for linear operation at 15 W output?

The datasheet specifies V_GS(Q) = 2.0–5.0 V at I_D = 150 mA for quiescent biasing. For linear 15 W P_OUT at 500 MHz, ST recommends 3.5 V gate bias with 12.5 V drain supply, verified in Figure 15 and Table 5. This setting achieves 14 dB gain and 55% drain efficiency while maintaining IM3 below −32 dBc.

Can PD55015-E operate safely at 28 V drain supply?

No. Absolute maximum V_(BR)DSS is 40 V, but the device is characterized and qualified only for 12.5 V operation per all electrical tables and typical performance curves. Operating at 28 V exceeds design intent, risks thermal runaway due to reduced safe operating area, and voids ST's reliability warranty.

Is the PowerSO-10RF package lead-free and RoHS compliant?

Yes. Per ST's ECOPACK® documentation referenced in the datasheet, PD55015-E is offered in RoHS-compliant, lead-free PowerSO-10RF packaging with MSL 3 moisture sensitivity level. Reflow profile follows J-STD-020B, peak temperature ≤ 260°C, and board layout guidelines are provided in AN1294.

How does the formed-lead variant differ electrically from the straight-lead variant?

Both variants share identical die and electrical specs, but formed leads reduce source inductance by ~0.3 nH versus straight leads, improving stability above 800 MHz. S-parameters in Tables 9–11 show 0.5–1.0 dB higher S21 gain and 2–3 dB better S11 return loss for formed-lead units at 900–1500 MHz under identical 12.5 V/2.25 A bias.