My Inquiry
My Account
STMicroelectronics PD55015STR-E
.jpg)
- Part No.:
- PD55015STR-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD55015STR-E.pdf
- Description:
- RF MOSFET LDMOS 12.5V PWRSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:6,944
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PD55015STR-E from STMicroelectronics is a common-source N-channel enhancement-mode lateral MOSFET RF power transistor designed for broadband commercial and industrial amplification up to 1 GHz. It delivers 15 W output power with 14 dB gain at 500 MHz under 12.5 V supply and 150 mA quiescent drain current, housed in the JEDEC-approved PowerSO-10RF (straight lead) plastic SMD package. Its superior linearity and thermal stability make it suitable for car mobile radio final-stage amplifiers.
For engineers reviewing the PD55015STR-E datasheet, PD55015STR-E pinout, PD55015STR-E application, or PD55015STR-E equivalent, key selection criteria include its 15 W P1dB output capability, 1.2 °C/W junction-to-case thermal resistance, 40 V drain-source breakdown voltage, common-source configuration, and compatibility with 50 Ω RF system impedance matching.
Technical Context
The PD55015STR-E employs ST's LDMOS technology optimized for high-gain, high-efficiency RF power amplification in common-source topology. It operates with fixed 12.5 V drain bias and adjustable gate bias (typically 2.0–5.0 V) to set 150 mA IDQ, enabling stable Class AB operation across 480–1500 MHz.
Its PowerSO-10RF straight-lead package integrates low-inductance source grounding and optimized RF pad layout to minimize parasitic reactance-critical for maintaining >12 dB power gain and <−10 dB input return loss up to 1 GHz, as confirmed by measured S-parameters at 225 mA, 1.2 A, and 2.25 A drain currents.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| P1dB Output Power | 15 W at 500 MHz - delivers full rated saturated RF output before 1 dB compression in typical mobile radio PA stage |
| Power Gain | 14 dB at 500 MHz - enables single-stage amplification from low-level driver to antenna interface without intermediate stages |
| Drain Efficiency | 55% at POUT = 15 W - reduces thermal load and DC power consumption in battery-sensitive vehicular applications |
| V(BR)DSS | 40 V - supports safe operation with 12.5 V supply plus transient margin in automotive electrical systems |
| RthJC | 1.2 °C/W - allows direct heatsink mounting with minimal thermal interface resistance for reliable 73 W max power dissipation |
| Frequency Range | DC to 1 GHz - covers FM broadcast (88–108 MHz), land-mobile radio (136–174 MHz, 400–520 MHz), and UHF ISM bands |
| Input Return Loss | −10 dB at 500 MHz - ensures stable amplifier operation with standard 50 Ω source impedance without external matching networks |
Pinout & Package
The PD55015STR-E is packaged in PowerSO-10RF (straight lead), a JEDEC-qualified surface-mount RF power package with integrated heatsink tab and optimized leadframe geometry for minimal RF parasitics and robust thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (G) | Control electrode | Accepts DC bias (2.0–5.0 V) and RF input signal; requires external DC blocking and impedance matching network |
| Source (S) | Common reference node | Connected directly to PCB ground plane via exposed metal tab; provides low-inductance return path for RF and DC currents |
| Drain (D) | RF power output node | Delivers amplified RF signal to output matching network; electrically isolated from heatsink tab by internal dielectric layer |
Key Features
| Feature | Design Value |
|---|---|
| Common-source configuration | Enables standard RF PA design flow with separate input (gate) and output (drain) ports referenced to grounded source |
| PowerSO-10RF straight-lead package | JEDEC-qualified SMD format with 0.5 mm pitch leads and exposed thermal pad-supports automated reflow assembly and high-reliability thermal management |
| Excellent thermal stability | 165 °C max junction temperature and 1.2 °C/W RthJC enable sustained 15 W operation without thermal runaway in sealed enclosures |
| High linearity (IMD3 < −30 dBc) | Validated in car mobile radio applications-minimizes adjacent-channel interference in multi-tone FM transmission |
| Moisture Sensitivity Level 3 | Requires handling per J-STD-020B; floor life of 168 hours after dry pack opening-compatible with standard SMT production environments |
Applications
| FM Broadcast Transmitter | Land-Mobile Radio Base Station |
|---|---|
Use Scenario: Final-stage RF amplifier in 88–108 MHz FM broadcast exciter modules for community radio stations. IC Role / Device Role / Timing Role: High-efficiency power amplifier delivering 15 W into 50 Ω load with minimal harmonic distortion. Use Value: Eliminates need for external heat sinks due to 1.2 °C/W thermal resistance, reducing board area and system cost. | Use Scenario: Output stage in 400–470 MHz trunked radio base station transceivers. IC Role / Device Role / Timing Role: Linear Class AB amplifier supporting analog FM and digital P25 waveforms with <−30 dBc IMD3. Use Value: 55% drain efficiency at 15 W output extends operational runtime in AC/DC-powered remote sites. |
| Car Mobile Radio Amplifier | UHF ISM Band Booster |
Use Scenario: Final RF power stage in vehicular two-way radios operating at 136–174 MHz or 450–470 MHz. IC Role / Device Role / Timing Role: Common-source LDMOS transistor biased at 12.5 V/150 mA for stable gain and load mismatch tolerance (20:1 VSWR). Use Value: Superior linearity prevents intermodulation distortion in congested urban RF environments. | Use Scenario: Signal booster in 902–928 MHz industrial, scientific, and medical (ISM) equipment. IC Role / Device Role / Timing Role: Fixed-gain broadband amplifier providing +14 dB gain from 876–915 MHz with <−10 dB input return loss. Use Value: Straight-lead PowerSO-10RF package enables repeatable RF performance across production batches without tuning. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF300BN | Higher P1dB (30 W), TO-270WB package, 28 V operation - requires redesigned bias network and heatsink | Targeted at higher-power base stations; not drop-in compatible due to different pinout and voltage requirements | Select when >15 W output or 28 V architecture is required; verify thermal interface for TO-270WB mounting |
| PD57015-E | Same PowerSO-10RF package but formed-lead variant; identical electrical specs except minor S-parameter phase shift below 500 MHz | Compatible with legacy PCB layouts designed for PD55015-E; same thermal and RF performance | Choose for backward compatibility with existing formed-lead footprint designs; no circuit redesign needed |
Compared with MRF300BN and PD57015-E, the PD55015STR-E offers optimal balance of 15 W output, SMD manufacturability, and automotive-grade reliability in a straight-lead package-making it the preferred choice for cost-sensitive, volume-manufactured mobile radio PAs where 12.5 V operation and JEDEC-compliant assembly are mandatory.
Availability
PD55015STR-E is available at Aetrix Electronics and suitable for FM broadcast transmitters, land-mobile radio base stations, and car mobile radio amplifiers requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for PD55015STR-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, analog, MEMS, and RF solutions for automotive, industrial, and communications markets.
The PD55015STR-E belongs to ST's LdmoST plastic RF power transistor family, engineered specifically for high-linearity, high-efficiency amplification in commercial and industrial wireless infrastructure operating below 1 GHz.
FAQ
What is the recommended gate bias voltage range for linear operation?
The PD55015STR-E achieves optimal linearity and gain stability with gate-source voltage (VGS) between 2.0 V and 5.0 V at IDQ = 150 mA. Typical bias is set at 3.5 V using a resistive divider or active current source; exceeding 5.0 V risks gate oxide stress, while below 2.0 V degrades gain and increases distortion.
Can PD55015STR-E be used at 28 V drain supply?
No. The absolute maximum V(BR)DSS is 40 V, but the device is characterized and qualified only for 12.5 V operation per datasheet test conditions. Operating at 28 V exceeds design intent, risks premature failure, and voids thermal and gain specifications-use MRF300BN or similar 28 V-rated RF MOSFETs instead.
Is external input/output matching required?
Yes. While the PD55015STR-E exhibits usable gain and return loss with 50 Ω terminations, datasheet Figures 7–10 and S-parameter tables confirm that full 15 W P1dB and 14 dB gain require external broadband matching networks on both input and output ports-especially critical above 500 MHz to maintain stability and efficiency.
How does the straight-lead PowerSO-10RF differ from the formed-lead version?
The straight-lead variant (PD55015STR-E) uses unbent leads for standard SMT placement, while the formed-lead version (PD55015-E) has downward-bent leads for through-hole or press-fit mounting. Both share identical die, thermal specs, and RF performance-only mechanical mounting differs; PCB footprints are not interchangeable.
PD55015STR-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 500MHz
- Gain:
- 14dB
- Voltage - Test:
- 12.5 V
- Current Rating (Amps):
- 5A
- Noise Figure:
- -
- Current - Test:
- 150 mA
- Power - Output:
- 15W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Straight Lead)
PD55015STR-E FAQ
1.How can I place an order for PD55015STR-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD55015STR-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD55015STR-E reliable?
The price and inventory of PD55015STR-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD55015STR-E is usually 5 days.
3.What payment methods are accepted for PD55015STR-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD55015STR-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD55015STR-E?
PD55015STR-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD55015STR-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD55015STR-E?
For technical support, including PD55015STR-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD55015STR-E requirements.
6.How does Aetrix verify that PD55015STR-E is sourced from the original manufacturer or authorized distributors?
All PD55015STR-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD55015STR-E meets industry standards.
7.What is the process for return or replacement of PD55015STR-E?
All PD55015STR-E units undergo pre-shipment inspection (PSI). If there is an issue with PD55015STR-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD55015STR-E part is unused and in its original packaging.
Return procedure for PD55015STR-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PD55015STR-E Tags
-
3SK294(TE85L,F)
Toshiba Semiconductor and Storage
-
SAV-551+
Mini-Circuits
-
TAV2-501+
Mini-Circuits
-
CE3514M4-C2
CEL
-
AFT05MS004NT1
NXP USA Inc.
-
SAV-541+
Mini-Circuits
-
CE3512K2-C1
CEL
-
AFM907NT1
NXP Semiconductors
-
SKY65050-372LF
Skyworks Solutions Inc.
-
CE3520K3-C1
CEL
-
AFT09MS007NT1
NXP USA Inc.
-
AFT09MS015NT1
NXP USA Inc.
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
