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STMicroelectronics PD55025

Part No.:
PD55025
Manufacturer:
STMicroelectronics
Category:
Single FETs, MOSFETs
Package:
PowerSO-10 Exposed Bottom Pad
Datasheet:
AetrixPD55025.pdf
Description:
RF MOSFET LDMOS 12.5V POWERSO10
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,142

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Product details

Overview

PD55025 from STMicroelectronics is a common-source, N-channel enhancement-mode lateral MOSFET RF power transistor in PowerSO-10RF package. It delivers 25 W output power with 14.5 dB gain at 500 MHz and 12.5 V supply, featuring 1.2 °C/W junction-to-case thermal resistance and 40 V drain-source breakdown voltage. Designed for car mobile radio amplifiers, it operates up to 1 GHz in broadband industrial and commercial RF power stages.

For engineers reviewing the PD55025 datasheet, PD55025 pinout, PD55025 application, or PD55025 equivalent, this page provides verified electrical specifications, thermal performance data, impedance matching guidance at 175–1000 MHz, and real-world biasing behavior across VGS, IDQ, and VDD variations - critical for RF PA design validation and thermal management planning.

Technical Context

This LDMOS device uses lateral structure for high thermal stability and linearity in common-source configuration. Its gate threshold voltage (2.0–5.0 V) and low on-resistance (0.7–0.8 V at ID = 3 A) enable stable Class AB operation under 12–13.8 V supply rails.

Input/output impedance varies significantly with frequency: at 500 MHz, ZIN = 0.93 − j1.53 Ω and ZDL = 1.12 + j0.20 Ω; S-parameters confirm strong forward gain (|S21| = 0.78 @ 500 MHz, VDS = 12.5 V, ID = 500 mA) and excellent input return loss (−17.8 dB).

Key Specifications

Parameter Value and Actual Design Meaning
POUT 25 W at 500 MHz - usable RF output power under standard 12.5 V, 200 mA quiescent bias
GP 14.5 dB gain at 500 MHz - enables single-stage amplification without cascaded gain blocks
ηD 50% drain efficiency at POUT = 25 W - reduces heat generation and simplifies heatsink sizing
V(BR)DSS 40 V - supports 13.8 V automotive rail with 2.9× safety margin against transients
Rth(j-c) 1.2 °C/W - allows 79 W power dissipation at TCASE = 70°C; critical for compact RF module thermal design
fMAX 1 GHz - validated operation up to cellular/ISM band edges with measured S-parameters
CISS 86 pF at VDS = 12.5 V - defines input matching network capacitance requirements

Pinout & Package

PD55025 is housed in PowerSO-10RF plastic package - ST's first JEDEC-approved high-power SMD RF package, available in straight-lead (PD55025S) and formed-lead (gull-wing) variants. Dimensions include E = 15.4 mm (straight), E = 14.1 mm (formed), D = 9.5 mm, and thermal pad optimized for PCB copper pour attachment.

Pin/Terminal Circuit Role Design Meaning
GATE Control electrode Accepts 0–10 V drive; threshold 2.0–5.0 V; requires DC blocking and RF bypass per application note AN1294
SOURCE Common reference node Connected to RF ground plane; serves as thermal path to PCB; must be low-inductance layout
DRAIN RF power output node High-current RF output terminal; connects to output matching network and heatsink via exposed pad

Key Features

Feature Design Value
PowerSO-10RF packaging First JEDEC-qualified SMD RF power package enabling automated assembly and repeatable thermal performance
Linearity at 500 MHz 20:1 load mismatch tolerance - maintains safe operation under antenna VSWR variations in mobile radio
Lateral LDMOS architecture Superior thermal stability vs. vertical MOSFETs - VGS drift < 0.02 V over −25°C to +100°C case range
Broadband impedance match ZIN and ZDL provided at 175/480/500/520 MHz - eliminates need for full EM simulation in initial PA design
High reliability rating 165°C max junction temperature and −65°C to +150°C storage range - qualified for automotive under-hood environments

Applications

Car Mobile Radio Amplifier UHF Land Mobile Radio Base Station

Use Scenario: Final RF power stage in 136–174 MHz or 400–520 MHz vehicle-mounted transceivers.

IC Role / Device Role / Timing Role: Common-source RF power amplifier delivering 25 W PEP output with linear modulation support.

Use Value: 50% drain efficiency and 20:1 VSWR tolerance ensure stable transmission during antenna detuning caused by vehicle body effects.

Use Scenario: Driver or final stage in fixed-site UHF repeater systems operating at 450–470 MHz.

IC Role / Device Role / Timing Role: High-gain, broadband RF power transistor in Class AB configuration with external harmonic filtering.

Use Value: Measured |S21| = 0.95 dB and input return loss >17 dB at 480 MHz simplify input matching and reduce front-end filter complexity.

ISM Band Industrial Heater Driver Amateur Radio HF/VHF Linear Amplifier

Use Scenario: 27.12 MHz or 40.68 MHz RF generator for plasma or induction heating equipment.

IC Role / Device Role / Timing Role: Switching-mode RF power device biased at 12.5 V with 200 mA quiescent current.

Use Value: 79 W power dissipation capability and 1.2 °C/W Rth(j-c) allow continuous-wave operation with minimal forced-air cooling.

Use Scenario: Homebrew HF/VHF linear amplifier covering 1.8–520 MHz bands using broadband matching networks.

IC Role / Device Role / Timing Role: Single-device RF power amplifier with externally tuned input/output circuits per band.

Use Value: Published ZIN/ZDL data at 175/480/500/520 MHz accelerates prototype tuning and reduces VNA measurement iterations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MRF158 BJT-based, 30 W POUT, lower gain (12 dB @ 500 MHz), higher VCE(sat) (1.5 V) Requires higher base drive current; less thermally stable than LDMOS above 85°C Prefer where legacy BJT bias networks exist and thermal cycling is mild
PD57003 LDMOS, 30 W POUT, 16 dB gain @ 500 MHz, 50 V V(BR)DSS, same PowerSO-10RF package Higher voltage headroom and improved gain; requires updated gate drive protection Drop-in upgrade path when 13.8 V rail margin or higher output is needed

Compared with MRF158 and PD57003, PD55025 offers optimal balance of gain, efficiency, and thermal robustness at 12.5 V operation - making it ideal for cost-sensitive mobile radio designs where 25 W output suffices and board space limits multi-stage architectures.

Availability

PD55025 is available at Aetrix Electronics and suitable for car mobile radio amplifiers, UHF land mobile radio base stations, ISM band industrial heater drivers, and amateur radio HF/VHF linear amplifiers requiring stable component supply across extended production cycles.

Supply support for PD55025 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and RF devices for industrial, automotive, and consumer markets.

PD55025 belongs to ST's LdmoST Plastic family of lateral RF power MOSFETs, engineered specifically for high-linearity, broadband RF amplification in space-constrained SMD applications - especially mobile and portable radio systems.

FAQ

What is the maximum safe operating frequency for PD55025?

PD55025 is characterized and guaranteed up to 1 GHz, with published S-parameters, gain, and efficiency data at 175 MHz, 480–520 MHz, and 1000 MHz. At 1 GHz, |S21| = 0.23 dB and POUT drops to ~5 W under standard bias - confirming functional operation but reduced output capability.

Can PD55025 operate from a 13.8 V supply?

Yes - absolute maximum V(BR)DSS is 40 V, and test data shows POUT increases to ~27 W at 13.8 V with identical 200 mA IDQ. Drain efficiency improves slightly, but thermal dissipation rises; heatsink design must accommodate increased PDISS at same output power.

Is PD55025 pin-compatible with PD55025S?

Yes - both share identical PowerSO-10RF footprint and pin assignment (GATE-SOURCE-DRAIN). PD55025 uses formed leads (gull-wing), PD55025S uses straight leads; PCB land pattern is identical, but reflow profile differs due to leadform geometry.

What thermal interface material is recommended for PD55025?

ST recommends soldering the exposed thermal pad directly to a minimum 25 mm² copper pour on the PCB, with ≥2 oz copper thickness. No thermal paste or tape is required - the PowerSO-10RF package is designed for direct metal-to-metal conduction, achieving the specified 1.2 °C/W Rth(j-c) when properly mounted.

PD55025 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
-
Package/Case:
PowerSO-10 Exposed Bottom Pad
Packaging:
Tube
Product Status:
Obsolete
Technology:
LDMOS
Configuration:
-
Frequency:
500MHz
Gain:
14.5dB
Voltage - Test:
12.5 V
Current Rating (Amps):
7A
Noise Figure:
-
Current - Test:
200 mA
Power - Output:
25W
Voltage - Rated:
40 V
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
10-PowerSO

PD55025 FAQ

1.How can I place an order for PD55025 through Aetrix?

Please submit a Request for Quotation (RFQ) for PD55025 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PD55025 reliable?

The price and inventory of PD55025 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD55025 is usually 5 days.

3.What payment methods are accepted for PD55025?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD55025 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PD55025?

PD55025 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PD55025 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PD55025?

For technical support, including PD55025 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD55025 requirements.

6.How does Aetrix verify that PD55025 is sourced from the original manufacturer or authorized distributors?

All PD55025 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD55025 meets industry standards.

7.What is the process for return or replacement of PD55025?

All PD55025 units undergo pre-shipment inspection (PSI). If there is an issue with PD55025, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PD55025 part is unused and in its original packaging.

Return procedure for PD55025:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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