STMicroelectronics PD55025-E

Overview

PD55025-E from STMicroelectronics is a common-source, N-channel enhancement-mode lateral MOSFET RF power transistor in the LDMOST plastic family. It delivers 25 W output power with 14.5 dB gain at 500 MHz under 12.5 V supply and 200 mA quiescent drain current, featuring 1.2 °C/W junction-to-case thermal resistance and 40 V drain-source breakdown voltage. It is engineered for high-linearity broadband amplification in car mobile radio transmitters.

For engineers reviewing the PD55025-E datasheet, PD55025-E pinout, PD55025-E application, or PD55025-E equivalent, this device supports critical RF power design decisions in commercial and industrial transmitters operating up to 1 GHz, requiring stable gain flatness, load mismatch tolerance (20:1 VSWR), and SMD-compatible thermal management.

Technical Context

This device uses ST's LDMOS technology optimized for RF linearity and thermal stability in plastic SMD packaging. Its common-source configuration enables direct integration into Class AB amplifier stages with gate bias control and drain-side RF matching networks.

It operates at DC–1 GHz with specified dynamic performance at 175 MHz, 480–520 MHz, and 1 GHz bands, supported by full S-parameter datasets across multiple bias conditions (ID = 0.5 A, 1.5 A, 3 A) and supply voltages (12.5 V, 13.8 V).

Key Specifications

Pinout & Package

The PD55025-E is housed in the PowerSO-10RF (formed lead) plastic package - ST's first JEDEC-approved high-power SMD RF package, optimized for RF performance, thermal dissipation, and automated assembly. Its exposed drain paddle provides low-inductance, low-thermal-resistance connection to PCB ground planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar RF power amplifier applications.

Compared with MRF6P21140HR5, PD55025-E offers proven LDMOS reliability at lower frequency and cost; compared with PD57015-E, it provides +10 W output and +1 dB gain at the expense of slightly higher thermal resistance - making it optimal for mid-power mobile radio final stages.

Availability

PD55025-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF land mobile radio base stations, FM broadcast auxiliary links, and industrial RF heating control requiring stable component supply across extended production lifecycles.

Supply support for PD55025-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

PD55025-E belongs to ST's LDMOST RF power transistor product line, developed specifically for high-linearity, high-reliability SMD-based RF amplifiers in commercial and industrial mobile communications equipment.

FAQ

What is the recommended gate bias voltage for PD55025-E in Class AB operation?

The typical gate-source voltage for 200 mA quiescent drain current is 3.5 V, as shown in Figure 5 (VGS vs case temperature) and confirmed by static characterization in Table 4 (VGS(Q) = 2.0–5.0 V). For stable thermal performance, a regulated gate bias circuit with temperature compensation is advised to maintain IDQ within ±10% over -25°C to +100°C case temperature range.

Can PD55025-E operate reliably at 1 GHz?

Yes - the datasheet specifies operation up to 1 GHz in common-source mode, with verified S-parameters provided through 1000 MHz at multiple bias points (ID = 0.5 A, 1.5 A, 3 A). At 1 GHz, measured gain drops to ~5 dB and POUT decreases to ~12 W, but linearity and VSWR tolerance remain within specification per Figure 17 and Table 10–13.

Is the PowerSO-10RF package lead-free and RoHS-compliant?

Yes - PD55025-E is offered in ECOPACK®-compliant PowerSO-10RF packaging, meeting RoHS Directive 2011/65/EU and REACH regulation. The device carries MSL 3 moisture sensitivity rating and is qualified per J-STD-020B, with lead-free terminations and halogen-free molding compound.

What thermal interface material is recommended between the drain paddle and heatsink?

No thermal interface material is required - the exposed drain paddle is designed for direct solder attachment to a copper heatsink pad on the PCB. ST recommends using a 2-oz. ED copper ground plane with thermal vias (≥8×0.3 mm diameter) connecting to internal or backside copper layers, per AN1294 layout guidelines available at www.st.com/rf/.