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STMicroelectronics PD55025S-E
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- Part No.:
- PD55025S-E
- Manufacturer:
- STMicroelectronics
- Category:
- Single FETs, MOSFETs
- Package:
- PowerSO-10 Exposed Bottom Pad
- Datasheet:
-
PD55025S-E.pdf
- Description:
- RF MOSFET LDMOS 12.5V PWRSO-10RF
- Quantity:
- Payment:
- Shipping:
Inventory:333
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Product details
Overview
PD55025S-E from STMicroelectronics is a 25 W N-channel enhancement-mode lateral MOSFET RF power transistor in common-source configuration, operating at 12.5 V with 14.5 dB gain at 500 MHz and 50% drain efficiency. It uses ST's LDMOS technology and is optimized for broadband commercial and industrial RF amplification up to 1 GHz, notably in car mobile radio transmitters.
For engineers reviewing the PD55025S-E datasheet, PD55025S-E pinout, PD55025S-E application, or PD55025S-E equivalent, this device is selected for high-linearity, thermally stable RF power stages requiring SMD-mountable plastic packaging with validated 1.2 °C/W junction-to-case thermal resistance and JEDEC-approved PowerSO-10RF (straight lead) footprint.
Technical Context
This device implements a lateral N-channel LDMOS structure with common-source topology, enabling broadband operation from 175 MHz to 1 GHz under fixed-bias conditions (IDQ = 200 mA to 3 A). Its gate threshold voltage (2.0–5.0 V) and low input capacitance (CISS = 86 pF @ 1 MHz) support stable Class AB driver-stage integration.
Thermal design is anchored by the PowerSO-10RF package's 1.2 °C/W RthJC and 165 °C max junction temperature, while dynamic performance is characterized across three bias points (500 mA, 1.5 A, 3 A) with full S-parameter datasets up to 1 GHz, confirming robust load mismatch tolerance (20:1 VSWR).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Power | 25 W @ 500 MHz, 12.5 V, IDQ = 200 mA - delivers full rated RF output in compact SMD form factor |
| Power Gain | 14.5 dB @ 500 MHz, POUT = 25 W - enables single-stage amplification without cascaded gain blocks |
| Drain Efficiency | 50 % @ 500 MHz, POUT = 25 W - reduces thermal load and DC supply current in battery-sensitive mobile radios |
| Junction-to-Case Rth | 1.2 °C/W - supports direct heatsink mounting with minimal thermal interface resistance |
| Max Drain Voltage | 40 V - provides 3× headroom over 12.5 V nominal rail, accommodating transient spikes and modulation peaks |
| Input Capacitance | CISS = 86 pF @ 1 MHz - defines matching network size and bandwidth trade-off in 500 MHz designs |
| Moisture Sensitivity | MSL 3 per J-STD-020B - requires standard floor-life handling before reflow, no special baking needed |
Pinout & Package
The PD55025S-E is housed in the PowerSO-10RF straight-lead plastic package - ST's first JEDEC-approved high-power SMD RF package, featuring exposed drain pad for thermal conduction and optimized RF layout geometry.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate | Control electrode | Receives bias voltage (VGS = 2.0–5.0 V typ.) to modulate channel conduction; low CISS enables wideband impedance matching |
| Source | Common reference node | DC ground return path and RF AC ground point; tied to PCB ground plane via multiple vias for low-inductance connection |
| Drain | RF power output terminal | High-current output node connected to exposed metal pad; requires direct thermal interface to heatsink for 79 W dissipation capability |
Key Features
| Feature | Design Value |
|---|---|
| Thermal stability | 165 °C max junction temperature + 1.2 °C/W RthJC enables sustained 25 W output without derating below 70 °C case temp |
| RF linearity | 50 % drain efficiency + 14.5 dB gain at POUT = 25 W ensures low distortion in FM/AM car radio PA stages |
| SMD compatibility | PowerSO-10RF straight-lead footprint supports automated pick-and-place and reflow soldering per JEDEC standards |
| Load mismatch resilience | Rated for 20:1 VSWR across all phase angles at 500 MHz - protects against antenna detuning or cable faults |
Applications
| Car Mobile Radio Transmitter | UHF Land Mobile Radio Base Station |
|---|---|
|
Use Scenario: Final RF power amplifier stage in 450–520 MHz vehicle-mounted two-way radios. IC Role / Device Role / Timing Role: Common-source N-channel LDMOS transistor delivering 25 W output with 14.5 dB small-signal gain. Use Value: High linearity and 50 % drain efficiency reduce heat generation and preserve audio fidelity under modulation. |
Use Scenario: Driver or final amplifier in 400–500 MHz base station repeaters for public safety networks. IC Role / Device Role / Timing Role: Broadband RF power transistor operating up to 1 GHz with validated S-parameters at 175–1000 MHz. Use Value: 20:1 VSWR tolerance prevents damage during antenna switching or environmental impedance shifts. |
| ISM Band Industrial Heater Driver | Amateur Radio HF/VHF Amplifier |
|
Use Scenario: Solid-state RF power stage in 27.12 MHz or 40.68 MHz industrial heating systems. IC Role / Device Role / Timing Role: High-efficiency Class AB amplifier biased at IDQ = 3 A for continuous-wave duty cycle. Use Value: 79 W power dissipation rating and 1.2 °C/W thermal resistance enable stable operation without forced air cooling. |
Use Scenario: Linear amplifier module in 1.8–54 MHz amateur transceivers requiring clean spectral output. IC Role / Device Role / Timing Role: Lateral MOSFET with low CRSS (5.8 pF) minimizing Miller effect for wideband stability. Use Value: Verified S-parameters at multiple bias points (500 mA, 1.5 A, 3 A) simplify broadband matching network design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MRF158 | BJT-based, 20 W POUT @ 500 MHz, lower gain (12 dB), higher VCE(sat) | Requires higher drive level and more complex bias network; less efficient at 12.5 V rail | Select when legacy BJT design compatibility or lower gate charge sensitivity is required |
| PD55025-E | Same die, PowerSO-10RF formed-lead package - identical electrical specs but gull-wing leads | Compatible with wave soldering; not suitable for fine-pitch reflow assembly | Select for through-hole compatible production lines or manual prototyping with formed leads |
Compared with MRF158, PD55025S-E delivers +2.5 dB gain and +5 W output at same frequency/voltage, while versus PD55025-E it offers identical RF performance with straight-lead SMT compatibility for modern automated assembly.
Availability
PD55025S-E is available at Aetrix Electronics and suitable for car mobile radio transmitters, UHF land mobile radio base stations, ISM band industrial heater drivers, and amateur radio HF/VHF amplifiers requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for PD55025S-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
PD55025S-E belongs to ST's LdmoST plastic family of RF power transistors, engineered specifically for high-gain, broadband commercial and industrial amplification up to 1 GHz with superior thermal reliability in SMD packages.
FAQ
What is the maximum safe operating frequency for PD55025S-E?
The PD55025S-E is characterized and rated for operation up to 1 GHz, with verified S-parameters and performance data provided from 175 MHz to 1000 MHz across multiple bias conditions (500 mA, 1.5 A, 3 A). At 1 GHz, it maintains usable gain and efficiency, though output power decreases relative to the 500 MHz peak of 25 W.
How does the PowerSO-10RF straight-lead package differ electrically from the formed-lead version?
Electrically, PD55025S-E (straight-lead) and PD55025-E (formed-lead) share identical die, absolute maximum ratings, static/dynamic characteristics, and S-parameters. The only difference is mechanical: straight leads enable standard SMT reflow assembly, while formed leads are intended for wave soldering or manual mounting.
Can PD55025S-E be used in Class C amplifier configurations?
No - PD55025S-E is specified and characterized for Class AB operation (IDQ = 200 mA to 3 A). Its gate threshold voltage range (2.0–5.0 V) and transconductance profile are optimized for linear amplification. Class C use would risk thermal runaway and is unsupported by ST's application data or reliability testing.
What thermal interface material is recommended for the exposed drain pad?
ST recommends a thermally conductive, electrically insulating material such as ceramic-filled silicone grease (e.g., Dow Corning TC-5123) or a 0.1–0.15 mm thick thermally conductive pad (e.g., Laird TGP-1000) between the exposed drain pad and heatsink. Minimum contact area must match the pad dimensions in Figure 25 (D1 × E1 = 7.4 × 9.3 mm).
PD55025S-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- PowerSO-10 Exposed Bottom Pad
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- LDMOS
- Configuration:
- -
- Frequency:
- 500MHz
- Gain:
- 14.5dB
- Voltage - Test:
- 12.5 V
- Current Rating (Amps):
- 7A
- Noise Figure:
- -
- Current - Test:
- 200 mA
- Power - Output:
- 25W
- Voltage - Rated:
- 40 V
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- PowerSO-10RF (Straight Lead)
PD55025S-E FAQ
1.How can I place an order for PD55025S-E through Aetrix?
Please submit a Request for Quotation (RFQ) for PD55025S-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PD55025S-E reliable?
The price and inventory of PD55025S-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PD55025S-E is usually 5 days.
3.What payment methods are accepted for PD55025S-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PD55025S-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PD55025S-E?
PD55025S-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PD55025S-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PD55025S-E?
For technical support, including PD55025S-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PD55025S-E requirements.
6.How does Aetrix verify that PD55025S-E is sourced from the original manufacturer or authorized distributors?
All PD55025S-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PD55025S-E meets industry standards.
7.What is the process for return or replacement of PD55025S-E?
All PD55025S-E units undergo pre-shipment inspection (PSI). If there is an issue with PD55025S-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PD55025S-E part is unused and in its original packaging.
Return procedure for PD55025S-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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